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Results 1 to 25 of 104459

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1.3 μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (22 1)A InP substrates by molecular beam epitaxySHIMOMURA, S; TORITSUKA, T; UENISHI, A et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 346-349, issn 1386-9477, 4 p.Conference Paper

Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPEROBBACH, R; SCHULZ, W.-M; REISCHLE, M et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5089-5092, issn 0022-0248, 4 p.Conference Paper

Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonicsRAJESH, Mohan; BORDEL, Damien; KAWAGUCHI, Kenichi et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 114-118, issn 0022-0248, 5 p.Conference Paper

In situ CBrCl3 etching to control size and density of InAs/GaAs quantum dotsKOIZUMI, Atsushi; IMANISHI, Hiroshi; UCHIDA, Kazuo et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 106-109, issn 0022-0248, 4 p.Conference Paper

Reversible and irreversible reactions of three oxygen precursors on InAs(0 0 1)-(4 × 2)/c(8 × 2)CLEMENS, Jonathon B; DROOPAD, Ravi; KUMMEL, Andrew C et al.Surface science. 2010, Vol 604, Num 21-22, pp 1859-1868, issn 0039-6028, 10 p.Article

Structural and electronic properties of group III Rich In0.53Ga0.47As(001)JIAN SHEN; CLEMENS, Jonathon B; CHAGAROV, Evgueni A et al.Surface science. 2010, Vol 604, Num 19-20, pp 1757-1766, issn 0039-6028, 10 p.Article

Anomalous hybridization in the In-rich InAs(0 0 1) reconstructionFELDWINN, Darby L; CLEMENS, Jonathon B; JIAN SHEN et al.Surface science. 2009, Vol 603, Num 22, pp 3321-3328, issn 0039-6028, 8 p.Article

Optical characterization of InGaAsN layers grown on InP substratesYOSHIKAWA, M; MIURA, K; IGUCHI, Y et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1745-1747, issn 0022-0248, 3 p.Conference Paper

Three-dimensional strain distribution during stacking of self-assembled InGaAs/GaAs quantum dot layersMUKAI, Kohki; NAKATOMI, Yusuke.Journal of crystal growth. 2006, Vol 294, Num 2, pp 268-272, issn 0022-0248, 5 p.Article

Ferromagnetism and spin polarization in indium nitride, indium oxynitride, and Cr substituted indium oxynitride filmsTHAPA, P; LAWES, G; NADGORNY, B et al.Applied surface science. 2014, Vol 295, pp 189-193, issn 0169-4332, 5 p.Article

Transport properties of InSb and InAs thin films on GaAs substratesOKAMOTO, Atsushi; GEKA, Hirotaka; SHIBASAKI, Ichiro et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 604-609, issn 0022-0248, 6 p.Conference Paper

Photonic dot structure which emits photons horizontally to a built-in waveguideMUKAI, Kohki; YAMAMOTO, Yasufumi.Journal of crystal growth. 2007, Vol 301-302, pp 984-988, issn 0022-0248, 5 p.Conference Paper

Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPENAKANO, T; NAKANO, Y; SHIMOGAKI, Y et al.Journal of crystal growth. 2006, Vol 296, Num 2, pp 179-185, issn 0022-0248, 7 p.Article

Growth of heterostructures on InAs for high mobility device applicationsCONTRERAS-GUERRERO, R; WANG, S; VAN DAL, M et al.Journal of crystal growth. 2013, Vol 378, pp 117-120, issn 0022-0248, 4 p.Conference Paper

MBE-growth of InAs/GaAs(001) quantum dots at low temperaturesZOLOTARYOV, A; HEYN, Ch; HANSEN, W et al.Journal of crystal growth. 2008, Vol 310, Num 18, pp 4122-4125, issn 0022-0248, 4 p.Article

Induced radioactivity of LDEF materials and structural componentsHARMON, B. A; LAIRD, C. E; REEVES, J. H et al.Radiation measurements. 1996, Vol 26, Num 6, pp 863-880, issn 1350-4487Article

Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVDSOZYKIN, A. S; STRELCHENKO, S. S; PROKOLKIN, E. V et al.Journal of crystal growth. 2013, Vol 363, pp 253-257, issn 0022-0248, 5 p.Article

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEMNAKANO, Takayuki; SHIODA, Tomonari; ENOMOTO, Naomi et al.Journal of crystal growth. 2012, Vol 347, Num 1, pp 25-30, issn 0022-0248, 6 p.Article

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic bufferGALIEV, G. B; VASIL'EVSKII, I. S; PUSHKAREV, S. S et al.Journal of crystal growth. 2013, Vol 366, pp 55-60, issn 0022-0248, 6 p.Article

Selective-area growth of high-crystalline-quality InGaAlAs by metal-organic vapor-phase epitaxyTSUCHIYA, T; SHIMIZU, J; SHIRAI, M et al.Journal of crystal growth. 2003, Vol 248, pp 384-389, issn 0022-0248, 6 p.Conference Paper

Co-doping of InxGa1―xAs with silicon and tellurium for improved ultra-low contact resistanceLAW, J. J. M; CARTER, A. D; LEE, S et al.Journal of crystal growth. 2013, Vol 378, pp 92-95, issn 0022-0248, 4 p.Conference Paper

Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxyCUI, L. J; ZENG, Y. P; WANG, B. Q et al.Journal of crystal growth. 2006, Vol 293, Num 2, pp 291-293, issn 0022-0248, 3 p.Article

The Kondo effect observed up to TK∼80K in self-assembled InAs quantum dots laterally coupled to nanogap electrodesSHIBATA, K; HIRAKAWA, K.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1795-1798, issn 0022-0248, 4 p.Conference Paper

Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenideTANAKA, Akiyo.Toxicology and applied pharmacology. 2004, Vol 198, Num 3, pp 405-411, issn 0041-008X, 7 p.Article

Boron and indium substitution in GaAs(001) surfaces: Density-functional supercell calculations of the surface stabilityJENICHEN, Arndt; ENGLER, Cornelia.Surface science. 2007, Vol 601, Num 4, pp 900-907, issn 0039-6028, 8 p.Article

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