MODELING OF THE DIODE INPUT 12L STRUCTUREPERLEGOS G; CHAN SP.1979; IEEE J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 3; PP. 645-647; BIBL. 13 REF.Article

TRANSPORT THEORY OF HIGH-FREQUENCY RECTIFICATION IN SCHOTTKY BARRIERSTSANG DW; SCHWARZ SE.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3459-3471; BIBL. 40 REF.Article

CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article

SCHOTTKEY RECTIFIERS ON SILICON USING HIGH BARRIERSSTOLT L; BOHLIN K; TOVE PA et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 295-297; BIBL. 6 REF.Article

CONTACTLESS MEASUREMENT OF SCHOTTKY BARRIER HEIGHTS USING SECONDARY ELECTRONSHUANG HCW; HO PS.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 5; PP. 482-484; BIBL. 10 REF.Article

DETECTEURS A BARRIERE DE SURFACE EN AU-SI A SENSIBILITE AMELIOREE DANS L'ULTRAVIOLET PROCHEGATSENKO LS; GOLOUNER TM; GROSHKOVA GN et al.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 5; PP. 272-273; BIBL. 6 REF.Article

PIEZOELECTRIC EFFECT IN AU-CDS SCHOTTKY BARRIER.KUSAKA M; KANAKURA M; OKAZAKI S et al.1977; SURF. SCI.; NETHERL.; DA. 1977; VOL. 64; NO 2; PP. 793-796; BIBL. 7 REF.Article

MECANISME DE LA SENSIBILITE AUX CONTRAINTES DE DIODES A BARRIERES DE SCHOTTKY EN ARSENIURE DE GALLIUMVYATKIN AP; MAKSIMOVA NK; FILONOV NG et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 7; PP. 1384-1387; BIBL. 15 REF.Article

THE METAL-OVERLAP LATERALLY-DIFFUSED (MOLD) SCHOTTKY DIODE.RUSU A; BULUCEA C; POSTOLACHE C et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 499-506; H.T. 1; BIBL. 29 REF.Article

GENERALIZED THEORY OF CONDUCTION IN SCHOTTKY BARRIERSSIMMONS JG; TAYLOR GW.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 7; PP. 705-709; BIBL. 3 REF.Article

SCHOTTKY-BASE I2L: A HIGH-PERFORMANCE LSI TECHNOLOGYBAHRAMAN A; CHANG SY; ROMEO DE et al.1979; IEEE J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 3; PP. 578-584; BIBL. 13 REF.Article

PROPRIETES DE POLARISATION DES DIODES DE CDSNP₂MEDVEDKIN GA; OVEZOV K; RUD YU V et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 11; PP. 2081-2085; BIBL. 10 REF.Article

SHALLOW PTSI-SI SCHOTTKY BARRIER CONTACTS FORMED BY A MULTILAYER METALLIZATION TECHNIQUETSAUR BY; SILVERSMITH DJ; MOUNTAIN RW et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5243-5246; BIBL. 8 REF.Article

SCHOTTKY-BARRIERS FOR CLEAN, ETCHED AND REACTIVE METAL-SEMICONDUCTOR JUNCTIONSLOUIS E; FLORES F.1981; J. PHYSIQUE; ISSN 0302-0738; FRA; DA. 1981; VOL. 42; NO 9; PP. 1313-1325; ABS. FRE; BIBL. 33 REF.Article

SI-SCHOTTKY-DIODE KD 514A AUS DER SOWJETUNION.BIELEFELDT R.1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 15; PP. 493Article

A NEW UNIFORM-FIELD SCHOTTKY-BARRIER STRUCTURE.RUSU A; BULUCEA C; POSTOLACHE C et al.1976; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1976; VOL. 21; NO 5; PP. 524-528; ABS. FR.; BIBL. 5 REF.Article

IMPROVEMENTS TO THE PERFORMANCE OF SINGLE-ENDED MIXERS BY THE USE OF NON-SINUSOIDAL PUMPINGRUSTOM S; HOWSON DP.1981; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1981; VOL. 50; NO 1; PP. 61-65; BIBL. 8 REF.Article

IL-22 : A critical mediator in mucosal host defenseAUJLA, S. J; KOLLS, J. K.Journal of molecular medicine (Berlin. Print). 2009, Vol 87, Num 5, pp 451-454, issn 0946-2716, 4 p.Article

SCHOTTKY CONTACT FABRICATION FOR GAAS MESFET'SMIERS TH.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1795-1799; BIBL. 26 REF.Article

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LOW-POWER GIGABIT LOGIC BY GAAS SSFLHASHIZUME N; YAMADA H; KOJIMA T et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 16; PP. 553-554; BIBL. 3 REF.Article

IMPROVED WHISKER POINTING TECHNIQUE FOR MICRON-SIZE DIODE CONTACTMATTAUCH RJ; GREEN G.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 143-144; BIBL. 5 REF.Article

PROPAGATION DELAY TIMES OF ISL AND STLLOHSTROH J; PLUTA RM.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 4; PP. 687-695; BIBL. 28 REF.Article

MEASUREMENT OF RICHARDSON CONSTANT OF GAAS SCHOTTKY BARRIERSSRIVASTAVA AK; ARORA BM; GUHA S et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 185-191; BIBL. 23 REF.Article

SCHOTTKY-BARRIER COUPLED SCHOTTCHY-BARRIER GATE CRAAS FETLOGICHASHIZUME N; YAMADA H.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 1; PP. 51-52; BIBL. 6 REF.Article