Papers Selected from the 3RD International TFT Conference - ITC'07FORTUNATO, Guglielmo; ARAKAWA, Y; CALLEJA, E et al.Solid-state electronics. 2008, Vol 52, Num 3, issn 0038-1101, 149 p.Conference Proceedings

Light emission excited by hot electrons in MgF₂ thin-film devicesSHU, Q. Q; ZU, Z. R; LU, J. W et al.Journal of applied physics. 1989, Vol 66, Num 12, pp 6193-6195, issn 0021-8979, 3 p.Article

Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodesKWANG SEOK LEE; BLANCHET, Graciela B; FENG GAO et al.DRC : Device research conference. 2004, pp 125-126, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

The 7th International Conference on Nano-Molecular Electronics (ICNME 2006)IWAMOTO, Mitsumasa; KANETO, Keiichi; YOKOYAMA, Shiyoshi et al.Thin solid films. 2008, Vol 516, Num 9, issn 0040-6090, 481 p.Conference Proceedings

Thin Film Photovoltaic Applications (TFPA)ESCOUBAS, Ludovic; CHOPRA, Kasturi; JEANNEROT, Luc et al.Solar energy materials and solar cells. 2011, Vol 95, issn 0927-0248, 90 p., SUP1Conference Proceedings

A printable form of single crystal silicon for high performance thin film transistors on plasticMENARD, E; KHANG, D.-Y; LEE, K et al.DRC : Device research conference. 2004, pp 127-128, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

A computationally simple model for hysteretic thin-film electroluminescent devicesJAREM, J. M; SINGH, V. P.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1834-1841, issn 0018-9383, 1Article

High-voltage poly-Si TFT's with multichannel structureUNAGAMI, T.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2363-2367, issn 0018-9383Article

Low-temperature polycrystalline silicon thin-film transistors for displaysBIAY-CHENG HSEIH; HATALIS, M. K; GREVE, D. W et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1842-1845, issn 0018-9383, 1Article

Percolating cermet thin-film thermistors between 50 mk-300 K and 0-20 TGERSHENFELD, N. A; VANCLEVE, J. E; WEBB, W. W et al.Journal of applied physics. 1988, Vol 64, Num 9, pp 4760-4762, issn 0021-8979Article

Synthesis, properties, and device applications of functionalized acenesANTHONY, John E; BROOKS, James S; BATON, David L et al.SPIE proceedings series. 2003, pp 124-132, isbn 0-8194-5090-1, 9 p.Conference Paper

Simulations of short-channel and overlap effects in amorphous silicon thin-film transistorsSHAW, J. G; HACK, M.Journal of applied physics. 1989, Vol 65, Num 5, pp 2124-2129, issn 0021-8979, 6 p.Article

Study on narrow-stripe polycrystalline silicon thin-films transistorsTAKESHITA, T; UNAGAMI, T; KOGURE, O et al.Japanese journal of applied physics. 1988, Vol 27, Num 10, pp 1937-1941, issn 0021-4922Article

A reflection high-energy electron diffraction study of ultra-thin Langmuir-Blodgett films of ω-tricosenoic acidJONES, C. A; RUSSELL, G. J; PETTY, M. C et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1986, Vol 54, Num 3, pp L89-L94, issn 0141-8637Article

Depression of the off-current by N/I buffer layer in a-Si TFTZOU, X; XU, Z; ZHOU, X et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1245-1248, issn 0022-3093, 2Conference Paper

Instability mechanisms in amorphous silicon thin film transistors and the role of the defect poolPOWELL, M. J; BAN BERKEL, C; DEANE, S. C et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1215-1220, issn 0022-3093, 2Conference Paper

All-organic thin-film transistors made of alpha-sexithienyl semiconducting and various polymeric insulating layersXUEZHOU PENG; HOROWITZ, G; FICHOU, D et al.Applied physics letters. 1990, Vol 57, Num 19, pp 2013-2015, issn 0003-6951Article

Broad band emission behaviors in ZnS thin film electroluminescent devicesNAKANO, R; MATSUMOTO, H; ENDO, T et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2103-L2104, issn 0021-4922, part 2Article

Bringing organic semiconductor material a step closer to the mass marketCARRASCO-OROZCO, M; TIERNEY, S; LEONHARD, C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7778, issn 0277-786X, isbn 978-0-8194-8274-7, 77780Y.1-77780Y.4Conference Paper

Solution processed OTFTs with 1 cm²/V-s mobilityKUO, Chung-Chen; PAYNE, Marcia; ANTHONY, John E et al.DRC : Device research conference. 2004, pp a8-a9, isbn 0-7803-8284-6, 1VolConference Paper

A comparison of amorphous and ply crystalline TFTS for LC displaysTHOMPSON, M. J.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1209-1214, issn 0022-3093, 2Conference Paper

Thin film resistor technology and noise reliability indicatorsHRUSKA, P.International conference on microelectronic. 1997, pp 663-666, isbn 0-7803-3664-X, 2VolConference Paper

Amorphous silicon thin-film transistors with two-layer gate insulatorNAM-DEOG KIM; CHOONG-KI KIM; JIN JANG et al.Applied physics letters. 1989, Vol 54, Num 21, pp 2079-2081, issn 0003-6951, 3 p.Article

Effects of the deposition sequence on amorphous silicon thin-film transistorsHIRANAKA, K; YOSHIMURA, T; YAMAGUCHI, T et al.Japanese journal of applied physics. 1989, Vol 28, Num 11, pp 2197-2200, issn 0021-4922, 4 p., part 1Article

The dependence of field effect mobilities on substrate temperature for amorphous silicon deposition for amorphous silicon thin film transistorsOYOSHI, K; KUSUDA, Y; YAMAOKA, T et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2010-L2012, issn 0021-4922, part 2Article