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FIELD INDUCED TUNNELING IN HG1-XCDXTE PHOTODIODESANDERSON WW.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1080-1082; BIBL. 13 REF.Article

ADVANTAGES OF THE HGTE-CDTE SUPERLATTICE AS AN INFRARED DETECTOR MATERIALSMITH DL; MCGILL TC; SCHULMAN JN et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 2; PP. 180-182; BIBL. 16 REF.Article

CDTE/HGCDTE INDIUM-DIFFUSED PHOTODIODESMIGLIORATO P; FARROW RFC; DEAN AB et al.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 6; PP. 331-336; BIBL. 13 REF.Article

DOPING BEHAVIOR OF IODINE IN HG0.8CD0.2TEVYDYANATH HR; KROGER FA.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 1; PP. 111-131; BIBL. 11 REF.Article

NON-LINEAR REFRACTIVE INDEX CHANGES IN CDHGTE AT 175 K WITH 10.6 MU M RADIATIONHILL JR; PARRY G; MILLER A et al.1982; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1982; VOL. 43; NO 2; PP. 151-156; BIBL. 16 REF.Article

LARGE OPTICAL NONLINEARITIES AND CW DEGENERATE FOUR-WAVE MIXING IN HGCDTEJAIN RK; STEEL DG.1982; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1982; VOL. 43; NO 1; PP. 72-77; BIBL. 27 REF.Article

SPUTTERING YIELD OF CDXHG1-XTE BOMBARDED BY MERCURY IONSZOZIME A; COHEN SOLAL G.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 76; NO 3; PP. 273-282; BIBL. 21 REF.Article

ETUDE DE L'EPITAXIE PAR JETS MOLECULAIRES DES COMPOSES II-VI: CDTE ET CDXHG1-XTE = STUDY OF MOLECULAR BEAM EPITAXY OF THE II-VI COMPOUNDS CDTE AND CDXHG1-XTEMILLION ALAIN.1982; ; FRA; DA. 1982; 93 F.; 30 CM; BIBL. 86 REF.; TH. DOCT.-ING./GRENOBLE, I.N.P./1982Thesis

APPLICATIONS OF SIMS TO HEAVY METAL TELLURIDESHOLLAND R; BLACKMORE GW.1982; SURF. INTERFACE ANAL.; ISSN 0142-2421; GBR; DA. 1982; VOL. 4; NO 4; PP. 174-177; BIBL. 5 REF.Article

FOUR-WAVE MIXING VIA OPTICALLY GENERATED FREE CARRIERS IN HG1-XCDXTEYUEN SY.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 590-592; BIBL. 15 REF.Article

ISOTHERMAL GROWTH OF HGCDTE UNDER CONTROLLED HG VAPOR PRESSUREBECLA P; LAGOWSKI J; GATOS HC et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 12; PP. 2855-2857; BIBL. 13 REF.Article

THEORY OF GENERATION RECOMBINATION NOISE IN INTRINSIC PHOTOCONDUCTORSSMITH DL.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7051-7060; BIBL. 12 REF.Article

DEEP LEVEL STUDIES OF HG1-XCDXTE. II: CORRELATION WITH PHOTODIODE PERFORMANCEPOLLA DL; REINE MB; JONES CE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5132-5138; BIBL. 15 REF.Article

EVIDENCE OF STRESS-MEDIATED HG MIGRATION IN HG1-XCDXTERACCAH PM; LEE U; SILBERMAN JA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 374-376; BIBL. 10 REF.Article

SURFACE DEFECTS OF CLOSED-SYSTEM-GROWN CDXHG1-XTE EPITAXIAL LAYERSIVANOV OMSKII VI; OGORODNIKOV VK; ROZUMNYI VD et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 71-74; ABS. RUS; BIBL. 6 REF.Article

ELECTRONICALLY SCANNED CMT DETECTOR ARRAY FOR THE 8-14 MU M BANDBALLINGALL RA; BLENKINSOP ID; ELLIOTT CT et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 7; PP. 285-287; BIBL. 1 REF.Article

CHEMICAL TRENDS FOR DEFECT ENERGY LEVELS IN HG1-XCDXTEKOBAYASHI A; SANKEY OF; DOW JD et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 10; PP. 6367-6379; BIBL. 28 REF.Article

A METHOD FOR ROUTINE CHARACTERISATION OF THE HOLE CONCENTRATION IN P-TYPE-CADMIUM MERCURY TELLURIDEDENNIS PNJ; ELLIOTT CT; JONES CL et al.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 3; PP. 167-169; BIBL. 3 REF.Article

MILLIMETER-WAVE GENERATION AT 110 GHZ BY LASER MODULATION OF A HGCDTC PHOTODIODETAUR Y; CHEUNG DT; HUFFMAN EH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 819-821; BIBL. 9 REF.Article

OBSERVATION OF DEFECTS IN MERCURY CADMIUM TELLURIDE CRYSTALS GROWN BY CHEMICAL VAPOR TRANSPORTIRENE EA; TIERNEY E; WIEDEMEIER H et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 710-712; BIBL. 8 REF.Article

Supersymmetry in heterojunctions: band-inverting contact on the basis of Pb1-xSnxTe and Hg1-xCdxTePANKRATOV, O. A; PAKHOMOV, S. V; VOLKOV, B. A et al.Solid state communications. 1987, Vol 61, Num 2, pp 93-96, issn 0038-1098Article

CHARGE-COUPLED DEVICES IN EPITAXIAL HGCDTE/CDTE HETEROSTRUCTUREKIM ME; TAUR Y; SHIN SH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 4; PP. 336-338; BIBL. 10 REF.Article

CRYSTAL GROWTH AND CHEMICAL TRANSPORT PROPERTIES OF HG1-XCDXTE AND CUINS2WIEDEMEIER H; CHANDRA D; YANG PH et al.1981; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 8/1981/GOUVIEUX; USA; PENNINGTON NJ: THE ELECTROCHEMICAL SOCIETY; DA. 1981; PP. 157-158; BIBL. 3 REF.Conference Paper

Bipolar transistor action in cadmium mercury tellurideASHLEY, T; CRIMES, G; ELLIOTT, C. T et al.Electronics Letters. 1986, Vol 22, Num 11, pp 611-613, issn 0013-5194Article

Electrical properties of HgCdMnTe P-N junctionsPLACZEK-POPKO, E; DUDZIAK, E; JEDRAL, L et al.Infrared physics. 1989, Vol 29, Num 5, pp 903-905, issn 0020-0891, 3 p.Article

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