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Results 1 to 25 of 31377

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Self-diffusion of 22Na and 137Cs in simulated nuclear waste glassNONAKA, Katsuhiko; NAKAJIMA, Hideo; MITSUI, Seiichiro et al.Materials transactions - JIM. 2002, Vol 43, Num 4, pp 654-659, issn 0916-1821Article

ETUDE PAR SPECTROMETRIE DE MASSE DE LA PULVERISATION CATHODIQUE REACTIVE HAUTE FREQUENCESHINOKI F.1977; BULL. ELECTROTECH. LAB.; JAP.; DA. 1977; VOL. 41; NO 8; PP. 64-70; ABS. ANGL.; BIBL. 16 REF.Article

ETUDE DU PROCESSUS DE PULVERISATION CATHODIQUE REACTIVEBITNER LR; DANILINA TI.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 1; PP. 71-73; BIBL. 6 REF.Article

AUFBAU EINES ASYMMETRISCHEN DIODENSYSTEMS FUER DIE HOCHFREQUENZPLASMAZERSTAEUBUNG. = CONCEPTION D'UN SYSTEME DE DIODE ASYMETRIQUE POUR LA PULVERISATION EN HAUTE FREQUENCEKALTOFEN R; THIEMT K; REINHARD G et al.1976; EXPER. TECH. PHYS.; DTSCH.; DA. 1976; VOL. 24; NO 5; PP. 479-487; ABS. ANGL.; BIBL. 17 REF.Article

SOME INVESTIGATIONS ON DEPOSITION AND ETCHING PROFILES IN MASKED RF SPUTTERING.SOPORI BL; CHANG WSC.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 3; PP. 782-785; BIBL. 15 REF.Article

KATODENZERSTAEUBTE WIDERSTANDSSCHICHTEN FUER HYBRIDE INTEGRIERTE SCHALTKREISE. = RESISTANCES COUCHES PAR PULVERISATION CATHODIQUE POUR CIRCUITS DE COMMUTATION INTEGRES HYBRIDESHARMAN R; KEMPNY M; VANEK O et al.1976; NACHR.-TECH., ELEKTRON.; DTSCH.; DA. 1976; VOL. 26; NO 10; PP. 395-397; BIBL. 4 REF.Article

REACTIVE SPUTTER ETCHING CHARACTERISTICS OF SI WAFERMIYAKE S; KASAI T.1979; BULL. JAP. SOC. PRECIS. ENGNG; JPN; DA. 1979; VOL. 13; NO 2; PP. 103-104; BIBL. 2 REF.Article

PRODUCTION DE GUIDES OPTIQUES EN AL2O3 PAR LA METHODE DE PULVERISATION REACTIVE HAUTE-FREQUENCEKISELEV VK; RED'KO VP.1979; ZH. TEKH. FIZ.; SUN; DA. 1979; VOL. 49; NO 4; PP. 883-884; BIBL. 3 REF.Article

IL-22 : A critical mediator in mucosal host defenseAUJLA, S. J; KOLLS, J. K.Journal of molecular medicine (Berlin. Print). 2009, Vol 87, Num 5, pp 451-454, issn 0946-2716, 4 p.Article

Temporal associations between interleukin 22 and the extracellular domains of IL-22R and Il-10R2JING LI; TOMKINSON, Kathy N; DE ZUTTER, Gerard et al.International immunopharmacology. 2004, Vol 4, Num 5, pp 693-708, issn 1567-5769, 16 p.Article

LSI SURFACE LEVELING BY RF SPUTTER ETCHINGYOSHIO HOM MA; HARADA S; KAJI T et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 9; PP. 1531-1533; BIBL. 5 REF.Article

THERMAL HISTORY OF SUBSTRATES DURING SPUTTERING AND SPUTTER ETCHINGLAMONT LT JR.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 9; PP. 107-112Article

MAGNETRON SPUTTERING OF SIO2; AN ALTERNATIVE TO CHEMICAL VAPOR DEPOSITION.URBANEK K.1977; SOLID STATE TECHNOL.; U.S.A.; DA. 1977; VOL. 20; NO 4; PP. 87-90; BIBL. 10 REF.Article

ELECTRICAL PROPERTIES OF RF SPUTTERING SYSTEMSKELLER JH; PENNEBAKER WB.1979; I.B.M.J. RES. DEVELOP.; USA; DA. 1979; VOL. 23; NO 1; PP. 3-15; BIBL. 18 REF.Article

REALISATION DE COUCHES MINCES SEMI-CONDUCTRICES DU TYPE III-V A BASE D'AZOTE PAR PULVERISATION CATHODIQUE REACTIVE.PUYCHEVRIER N; MENORET M; CACHARD M et al.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 99-103; ABS. ANGL.; BIBL. 3 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

FABRICATION DE L'ORDRE INFERIEUR AU MICRON, GRAVURE PAR PULVERISATION HF DE MONOCRISTAUX DE GAASNAMBA S; TOYODA K; SHIDKAWA T et al.1976; OYO BUTURI; JAP.; DA. 1976; VOL. 45; NO 7; PP. 689-694; BIBL. 11 REF.Article

Welche Kältemittel in der Zukunft? = Which refrigerant in the future?DOÊRING, R.Die Kälte und Klimatechnik. 1990, Vol 43, Num 9, pp 472-482, issn 0343-2246, 6 p.Article

REACTIVE SPUTTER ETCHING OF SILICON WITH VERY LOW MASK-MATERIAL ETCH RATESHORWITZ CM.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1320-1323; BIBL. 10 REF.Article

ION-BOMBARDMENT-INDUCED IMPROVEMENT OF PHOTORESIST. MASK PROPERTIES FOR RF SPUTTER-ETCHING.IIDA Y; OKABAYASHI H; SUZUKI K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 8; PP. 1313-1318; BIBL. 12 REF.Article

PRESSURE CONTROL OF RF BIAS FOR SPUTTERING.KOCHEL SJ.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 12; PP. 1556-1557; BIBL. 4 REF.Article

RF SPUTTERING OF GRAPHITE IN ARGON-OXYGEN MIXTURES.HOLLAND L; OJHA SM.1976; VACUUM; G.B.; DA. 1976; VOL. 26; NO 6; PP. 233-235; BIBL. 2 REF.Article

DISPOSITIF POUR LE DEPOT DE REVETEMENTS OPTIQUES MULTICOUCHES PAR UNE METHODE DE PULVERISATION CATHODIQUE REACTIVEBITNER LR; DANILINA TI; MAR'IN AV et al.1980; OPT.-MEKH. PROMYSHL.; SUN; DA. 1980; NO 3; PP. 43-44; BIBL. 2 REF.Article

Rapid technology evaluation to HCFC-22/142b blowing agent for refrigerator insulation foamFANICHET, X; KUHN, E; SCHINDLER, P et al.Journal of cellular plastics. 1994, Vol 30, Num 4, pp 291-301, issn 0021-955XConference Paper

Th17 cytokines and mucosal immunityDUBIN, Patricia J; KOLLS, Jay K.Immunological reviews. 2008, Vol 226, pp 160-171, issn 0105-2896, 12 p.Article

IL-22, but Not IL-17, Dominant Environment in Cutaneous T-cell LymphomaMIYAGAKI, Tomomitsu; SUGAYA, Makoto; SUGA, Hiraku et al.Clinical cancer research (Print). 2011, Vol 17, Num 24, pp 7529-7538, issn 1078-0432, 10 p.Article

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