Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:(%22CHARGE CARRIER CONCENTRATION%22)

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 342533

  • Page / 13702
Export

Selection :

  • and

A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORSMING FU LI; CHIH TANG SAH.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 306-315; BIBL. 21 REF.Article

EFFECT OF ELECTRON-ELECTRONSCATTERING ON MOBILITY IN GAASCHATTOPADHYAY D.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3330-3332; BIBL. 13 REF.Article

MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299 AND 105 KDAS MB; KIM B.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 205-211; BIBL. 12 REF.Article

ON SOME PARAMETERS OF ANNEALED TIN TELLURIDE, PREPARED BY THE IODIDE METHODMOLDOVANOVA M; TRIFONOVA EP; ASSENOV R et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 1; PP. K47-K50; BIBL. 8 REF.Article

IONIZATION OF LOW DONOR LEVELS AND RECOMBINATION OF HOT ELECTRONS IN N-SI AT LOW TEMPERATURESASCHE M; KOSTIAL H; SARBEY OG et al.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 2; PP. 521-530; ABS. RUS; BIBL. 26 REF.Article

DISCONTINUITIES IN DRIFT SOLUTIONS DUE TO REVERSAL IN AMBIPOLAR DRIFT. INJECTION ANS ACCUMULATION OF HOT CARRIERS.DMITRIEV AP; STEFANOVICH AF; TSENDIN LD et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 1; PP. 45-53; ABS. RUSSE; BIBL. 12 REF.Article

AMBIPOLAR DIFFUSION OF HIGH-DENSITY ELECTRONS AND HOLES IN GE, SI, AND GAAS: MANY-BODY EFFECTSYOUNG JF; VAN DRIEL HM.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 4; PP. 2147-2158; BIBL. 43 REF.Article

DIFFUSION OF ELECTRONS AND HOLES IN SEMICONDUCTORS UNDER CONDITIONS OF GRADIENTS OF LATTICE TEMPERATURE AND CARRIER CONCENTRATIONWAUTELET M.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 6; PP. 881-889; BIBL. 20 REF.Article

ORIENTATION EFFECTS ON DOPING PROFILES IN GALLIUM ARSENIDE IMPLANTED WITH SELENIUMINADA T; SUGIYAMA T.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6986-6989; BIBL. 11 REF.Article

LES ONDES QUASI ALFVEN, LEUR AUTOEXCITATION ET L'EMISSION SPONTANEEGUREVICH L EH; ZELRYA GG.1981; PIS'MA Z. EKSP. TEOR. FIZ.; ISSN 0370-274X; SUN; DA. 1981; VOL. 34; NO 10; PP. 525-529; BIBL. 5 REF.Article

DETERMINATION DU PROFIL DE CONCENTRATION DES PORTEURS MAJORITAIRES DU SEMICONDUCTEUR DANS LA ZONE DE CHARGE D'ESPACE A PARTIR DE LA CARACTERISTIQUE TENSION-CAPACITEMURYLEVA IV; PASHINTSEV YU I; KARAMYSHEV VP et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 3; PP. 236-240; BIBL. 11 REF.Article

WARM ELECTRON CONDUCTIVITY IN LEAD CHALCOGENIDESSHENDEROVSKII VA; GORLEY PN.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 53; NO 2; PP. K189-L194; BIBL. 14 REF.Article

THERMAL-PULSE TECHNIQUE FOR DETERMINING CHARGE DISTRIBUTIONS: EFFECT OF MEASUREMENT ACCURACYVON SEGGERN H.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 2; PP. 134-137; BIBL. 17 REF.Article

PREDEPOSITION THROUGH A POLYSILICON LAYER AS A TOOL TO REDUCE ANOMALIES IN PHOSPHORUS PROFILES AND THE PUSH-OUT EFFECT IN N-P-N TRANSISTORSFINETTI M; MASETTI G; NEGRINI P et al.1980; J.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 1; PP. 37-41; BIBL. 26 REF.Article

EFFECT OF EXCESS COMPONENT ELEMENT DURING LPE ON ELECTRICAL PROPERTIES OF CDTESARAIE J; KITAGAWA M; TANAKA T et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 12; PP. 2226-2231; BIBL. 39 REF.Article

LATTICE THERMAL RESISTIVITY DUE TO THE BOUND STATE ELECTRONSDUBEY KS; KASSIM HA.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 2; PP. K149-K154; BIBL. 18 REF.Article

ETUDE DE L'ACTIVITE ELECTRIQUE DES IMPURETES GADOLINIUM ET YTTERBIUM DANS L'ANTIMONIURE DE GALLIUMALIEV MI; ISAKOV GI; ZEJNALOV SA et al.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 5; PP. 835-837; BIBL. 6 REF.Article

FORMATION OF HEAVILY DOPED N-TYPE LAYERS IN GAAS BY MULTIPLE ION IMPLANTATIONSTONEHAM EB; PATTERSON GA; GLADSTONE JM et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 2; PP. 371-383; BIBL. 8 REF.Article

TEMPERATURE DEPENDENCE OF THE PRE-EXPONENTIAL FACTOR IN THE GLOW CURVE THEORYBALARIN M.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 2; PP. K137-K140; BIBL. 11 REF.Article

THE INFLUENCE OF THE GROWTH PROCESS ON DOPING PROFILE AND MOBILITY PROFILE DURING LPE OF THE PSEUDOBINARY SN-GAAS SYSTEMKOENIG U; HEIME K; KUBALEK E et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 296-299; BIBL. 7 REF.Article

TWO-DIMENSIONAL ELECTRON GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACESTORMER HL; DINGLE R; GOSSARD AC et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 29; NO 10; PP. 705-709; BIBL. 16 REF.Article

ANOMALOUS RESISTIVITY AT THE STRUCTURAL PHASE TRANSITION OF POLYCRYSTALLINE SNTEGRASSIE ADC; AGAPITO JA; GONZALEZ P et al.1979; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1979; VOL. 12; NO 24; PP. L925-L927; BIBL. 10 REF.Article

COMPARISON OF ELECTRICAL PROFILES FROM HOT AND COLD IMPLANTATIONS OF ZINC IONS INTO GAAS.KULAR SS; SEALY BJ; STEPHENS KG et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 22-23; BIBL. 8 REF.Article

LONGITUDINAL MAGNETORESISTANCE OF N-INSB IN THE QUANTUM LIMIT.SUGIHARA K; TOKUMOTO M; YAMANOUCHI C et al.1976; J. PHYS. SOC. JAP.; JAP.; DA. 1976; VOL. 41; NO 1; PP. 109-115; BIBL. 10 REF.Article

ETUDE DU COEFFICIENT D'ABSORPTION DANS PBTE PVEJS AN; UKHANOV YU I.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 7; PP. 1315-1320; BIBL. 12 REF.Article

  • Page / 13702