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DISCONTINUITIES IN DRIFT SOLUTIONS DUE TO REVERSAL IN AMBIPOLAR DRIFT. INJECTION ANS ACCUMULATION OF HOT CARRIERS.DMITRIEV AP; STEFANOVICH AF; TSENDIN LD et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 1; PP. 45-53; ABS. RUSSE; BIBL. 12 REF.Article

EFFET DES CONTACTS SUR LES CARACTERISTIQUES COURANT-TENSION DE STRUCTURES A DOUBLE INJECTION DE PORTEURSZYUGANOV AN; ROMANENKO VF.1979; POLUPROVODN. TEKH. MIKROELEKTRON.; UKR; DA. 1979; NO 29; PP. 37-48; BIBL. 12 REF.Article

ELECTRICAL CONDUCTION OF HOT CARRIERS IN SINGLE-INJECTION SOLID-STATE DIODES WITH EXPONENTIAL TRAP DISTRIBUTIONSHARMA YK.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 8; PP. 5381-5386; BIBL. 17 REF.Article

F.E.M. DANS LES SEMICONDUCTEURS, DUE A L'INJECTION THERMIQUEABROSIMOV VM; EGOROV BN; LIDORENKO NS et al.1977; IZVEST. AKAD. NAUK S.S.S.R., ENERGET.; S.S.S.R.; DA. 1977; NO 5; PP. 168-169; BIBL. 4 REF.Article

INFLUENCE DES CHAMPS LOCAUX DES PORTEURS DE CHARGE INJECTES SUR L'EFFET DE FAIBLE CHAMP MAGNETIQUE DANS LE TETRATHIOTETRACENEKAULACH IS.1977; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1977; NO 2; PP. 42-46; ABS. ANGL.; BIBL. 4 REF.Article

ON THE MINORITY CHARGE STORAGE FOR AN EPITAXIAL SCHOTTKY-BARRIER DIODECHUANG CT.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 700-705; BIBL. 15 REF.Article

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A MODEL OF CHARGE INJECTION AT METAL-INSULATOR CONTACTS.CHEN I.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 6; PP. 359-363; BIBL. 9 REF.Article

THEORY OF TRAP-CONTROLLED TRANSIENT CURRENT INJECTION.RUDENKO AI.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 22; NO 1; PP. 215-218; BIBL. 7 REF.Article

PHENOMENES D'INJECTION ET D'EXTRACTION ANORMAUX DANS LES STRUCTURES M.I.S.PANANAKAKIS G; VIKTOROVITCH P; KAMARINOS G et al.1977; C.R. ACAD. SCI., B; FR.; DA. 1977; VOL. 284; NO 21; PP. 471-474; ABS. ANGL.; BIBL. 9 REF.Article

TRANSFERT DE COURANT NON STATIONNAIRE DANS LES SOLIDES LORS DE L'INJECTION DE PORTEURS PAR UNE IMPULSION LUMINEUSEKEL'NER SR; RUDENKO AI.1976; IZVEST. VYSSH. UCHEBN. ZAVED. RADIOFIZ.; S.S.S.R.; DA. 1976; VOL. 19; NO 10; PP. 1541-1553; ABS. ANGL.; BIBL. 5 REF.Article

MODULATION ACOUSTIQUE DE LA CONSTANTE DIELECTRIQUE D'UN CRISTAL SEMICONDUCTEUR PIEZOELECTRIQUE SOUS DES NIVEAUX ELEVES D'INJECTION MONOPOLAIRE DES PORTEURS DE COURANTEVSEEV BS; BELOV MM.1980; VESCI AKAD. NAVUK BSSR, SER. FIZ.-MAT. NAVUK; ISSN 0002-3574; BYS; DA. 1980; NO 1; PP. 120-124; ABS. ENG; BIBL. 5 REF.Article

ANALYSE NUMERIQUE DES PROCESSUS NON STATIONNAIRES DANS LES TRANSITIONS ELECTRON TROU UNIDIMENSIONNELLESPETRUSHENKO JE YI; ERKENOV N KH.1978; DOP. AKAD. NAUK UKRAIJIN. R.S.R., A; S.S.S.R.; DA. 1978; NO 4; PP. 354-358; ABS. ANGL.; BIBL. 12 REF.Article

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MINORITY-CARRIER INJECTION AND EXTRACTION IN N-TYPE GERMANIUMRIEDER G; HENISCH HK; RAHIMI S et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 2; PP. 723-729; BIBL. 12 REF.Article

INJECTION MAGNETIQUE DES PORTEURS MINORITAIRES DANS LES SEMICONDUCTEURSKUMEKOV SE.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 3; PP. 521-525; BIBL. 4 REF.Article

EFFECT OF SURFACE RECOMBINATION ON THE TRANSIENT DECAY OF EXCESS CARRIERS PRODUCED BY SHORT WAVELENGTH LASER PULSESTYAGI MS; NIJS JF; VAN OVERSTRAETEN RJ et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 411-415; BIBL. 12 REF.Article

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