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Results 1 to 25 of 147245

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RELATION ENTRE CONCENTRATION ET MOBILITE DES PORTEURS DANS LES PHASES DE TYPE METALLIQUENEMCHENKO VF.1979; DOKL. AKAD. NAUK UKR. S.S.R., A; UKR; DA. 1979; NO 7; PP. 582-584; ABS. ENG; BIBL. 8 REF.Article

A MICROCOMPUTER BASED CONTROL SYSTEM FOR ANTENNA MEASUREMENTSPAPAIOANNOU D; LANGLEY RJ.1982; JOURNAL OF PHYSICS E: SCIENTIFIC INSTRUMENTS; ISSN 0022-3735; GBR; DA. 1982 PUBL. 1983; VOL. 16; NO 5; PP. 394-396; BIBL. 1 REF.Article

TUNNELING IN TILTED SI INVERSION LAYERSMATHESON TG; HIGGINS RJ.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 4; PP. 2633-2644; BIBL. 22 REF.Article

ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA) AS/GAAS FETS AT CRYOGENIC TEMPERATURESDRUMMOND TJ; SU SL; LYONS WG et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 24; PP. 1057-1058; BIBL. 8 REF.Article

EFFECTS OF STOICHIOMETRY ON THERMAL STABILITY OF UNDOPED SEMI-INSULATING GAASTA LB; HOBGOOD HM; ROHATGI A et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5771-5775; BIBL. 17 REF.Article

ON ANOMALOUS DRIFT MOBILITY RESULTS IN A-SILICON ALLOYSDATTA T; SILVER M.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 11; PP. 1067-1071; BIBL. 6 REF.Article

HOT ELECTRONS IN A GAAS HETEROLAYER AT LOW TEMPERATUREPRICE PJ.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6863-6866; BIBL. 16 REF.Article

DYNAMIQUE DES ELECTRONS DANS L'ARGON ET LE XENON CONDENSESGUSHCHIN EM; KRUGLOV AA; OBODOVSKIJ IM et al.1982; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1982; VOL. 82; NO 4; PP. 1114-1125; ABS. ENG; BIBL. 25 REF.Article

MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299 AND 105 KDAS MB; KIM B.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 205-211; BIBL. 12 REF.Article

CARRIER CONCENTRATION AND MOBILITY OF PBTE AND PB1-XSNXTE LPE THIN LAYERSZEMEL A; TAMARI N; EGER D et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 8; PP. 5549-5551; BIBL. 14 REF.Article

EFFECT OF HIGH-TEMPERATURE ANNEALING IN CADMIUM ON THE ELECTRICAL TRANSPORT PROPERTIES OF SINGLE CRYSTALS OF CADMIUM SULPHIDEMATHUR PC; SETHI BR; SHARMA OP et al.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 12; PP. 2333-2339; BIBL. 15 REF.Article

RELATION BETWEEN THE ACTIVATION ENERGIES (EPSILON 1, E)) AND THE TEMPERATURE OF CARRIER MOBILITY MAXIMUM IN SEMICONDUCTORS. A NEW METHOD FOR DETERMINATION OF E1.SOMOGYI K.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 659-666; ABS. RUSSE; BIBL. 11 REF.Article

RAPPORTS ANALYTIQUES DECRIVANT LES VARIATIONS ELECTROPHYSIQUES DANS GE TYPE N EN FONCTION DU FLUX INTEGRAL DE NEUTRONS DU REACTEURMIERIN A YA; KULAKOV VM; ULMANIS UA et al.1976; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1976; NO 4; PP. 94-98; ABS. ANGL.; BIBL. 13 REF.Article

DETERMINATION DE LA MOBILITE ET DE LA CONCENTRATION DES PORTEURS DANS LES SEMICONDUCTEURS PAR DES METHODES SANS CONTACT DE MAGNETOPLASMAPOZHELA YU K; TOLUTIS RB.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 6; PP. 1193-1201; BIBL. 7 REF.Article

INFLUENCE OF BULK IMPURITIES ON CHARACTERISTICS OF LOCAL SURFACE STATES AT CLEAVED GERMANIUM SURFACEABESSONOVA LN; DOBROVOLSKII VN; ZHARKIKH YS et al.1979; SURF. SCI.; NLD; DA. 1979; VOL. 84; NO 1; PP. 201-210; BIBL. 27 REF.Article

PROPRIETES DE SI DOPE PAR LAKHUTSISHVILI EH V; KEKUA MG; BIGVAVA NK et al.1975; IZVEST. AKAD. NAUK GRUZ. S.S.R., SER. KHIM.; S.S.S.R.; DA. 1975; VOL. 1; NO 3; PP. 249-252; ABS. GEORGIEN ANGL.; BIBL. 9 REF.Article

PARITY AND DIFFERENTIABILITY RESTRICTIONS ON THE ELECTRIC FIELD DEPENDENCE OF THE MOBILITY OF CHARGED PARTICLES IN GASES AND LIQUIDS. REPLYBAIRD JK; CARMICHAEL I.1979; J. CHEM. PHYS.; USA; DA. 1979; VOL. 70; NO 3; PP. 1575-1576; BIBL. 5 REF.Article

CARACTERISATION ELECTRIQUE DE COUCHES MINCES CONDUCTRICES PAR UNE METHODE HYPERFREQUENCE SANS CONTACTLE CLEAC'H X; BELLEC M.1982; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1982; VOL. 17; NO 8; PP. 481-490; ABS. ENG; BIBL. 22 REF.Article

MOBILITE DES TROUS DANS LES STRUCTURES METAL-DIELECTRIQUE-SEMICONDUCTEUR DANS LA ZONE DE FAIBLE INVERSIONGUZEV AA; RZHANOV AV.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 1; PP. 56-63; BIBL. 14 REF.Article

DISCONTINUITIES IN DRIFT SOLUTIONS DUE TO REVERSAL IN AMBIPOLAR DRIFT. INJECTION ANS ACCUMULATION OF HOT CARRIERS.DMITRIEV AP; STEFANOVICH AF; TSENDIN LD et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 1; PP. 45-53; ABS. RUSSE; BIBL. 12 REF.Article

STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article

MOBILITY, LIFETIME AND DIFFUSION LENGTH IN POLYCRYSTALLINE MATERIALSSEN K.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 2; PP. 341-343; BIBL. 7 REF.Article

ELECTRON MOBILITY AND CARRIER CONCENTRATION OF HETEROEPITAXIAL ZINC SELENIDELEIGH WB; BESOMI P; WESSELS BW et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 532-535; BIBL. 13 REF.Article

MINORITY CARRIER TRANSPORT AND RADIATIVE RECOMBINATION IN ALXGA1-XAS VARIABLE-COMPOSITION STRUCTURESOSINSKII VI; MALYSHEV SA; RYZHKOV MP et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 43-50; ABS. GER; BIBL. 23 REF.Article

MOBILITY AND RECOMBINATION COEFFICIENT OF CHARGE CARRIERS IN DISORDERED PENTACENEMARUYAMA Y; BAESSLER H.1981; PHYS. STATUS SOLIDI (B), BASIC FES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. 263-268; ABS. GER; BIBL. 16 REF.Article

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