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Results 1 to 25 of 159494

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IONIZATION OF LOW DONOR LEVELS AND RECOMBINATION OF HOT ELECTRONS IN N-SI AT LOW TEMPERATURESASCHE M; KOSTIAL H; SARBEY OG et al.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 2; PP. 521-530; ABS. RUS; BIBL. 26 REF.Article

RECOMBINAISON AUGER DANS LE SILICIUMABAKUMOV VN; YASSIEVICH IN.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 7; PP. 1302-1310; BIBL. 9 REF.Article

RECOMBINAISON AUGER DANS SI AUX BASSES TEMPERATURESDELIMOVA LA.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1349-1352; BIBL. 19 REF.Article

ON THE EFFECT OF SURFACE RECOMBINATION ON SOME PROPERTIES OF SEMICONDUCTOR DEVICESKURJATA PFITZNER E.1980; SURF. TECHNOL.; ISSN 0376-4583; CHE; DA. 1980; VOL. 10; NO 4; PP. 259-275; BIBL. 15 REF.Article

RECOMBINATION IN HEAVILY DOPED PLANAR DIODESPOSSIN GE; KIRKPATRICK CG.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3478-3483; BIBL. 11 REF.Article

RECOMBINAISON AUGER H-H-E DANS LE SILICIUMGRIVITSKAS V; VAJTKUS YU.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 11; PP. 2096-2099; BIBL. 7 REF.Article

INTERFACIAL RECOMBINATION VELOCITY IN GAAIASGAAS HETEROSTRUCTURES.NELSON RJ; SOBERS RG.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 761-763; BIBL. 17 REF.Article

CONCENTRATION PROFILES OF RECOMBINATION CENTERS IN SEMICONDUCTOR JUNCTIONS EVALUATED FROM CAPACITANCE TRANSIENTS.CHIH TANG SAH; NEUGROSCHEL A.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1069-1074; BIBL. 11 REF.Article

RECOMBINAISON AUGER NON RADIATIVE D'ELECTRONS SUR TROIS CENTRESKUDYKINA TA; TOLPYGO KB; SHEJNKMAN MK et al.1979; UKRAIN. FIZ. ZH.; UKR; DA. 1979; VOL. 24; NO 6; PP. 809-815; ABS. ENG; BIBL. 24 REF.Article

A COMBINATION OF AUGER AND MANY-PHONON PROCESSES IN NONRADIATIVE RECOMBINATIONREBSCH JT.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 31; NO 5; PP. 377-381; BIBL. 16 REF.Article

TRANSITION RATES FOR AUGER AND OTHER PROCESSES IN SITUATIONS FAR REMOVED FROM THERMAL EQUILIBRIUMPICKIN W.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 98; NO 1; PP. 155-164; ABS. GER; BIBL. 13 REF.Article

RECOMBINATIONS LIFETIMES AND SURFACE RECOMBINATION VELOCITIES OF MINORITY CARRIERS IN N-P JUNCTIONS. A NEW METHOD FOR THEIR DETERMINATION BY MEANS OF A STATIONARY AMPLITUDE-MODULATED ELECTRON BEAMVON ROOS O.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3738-3742; BIBL. 13 REF.Article

THE AUGER RATE IN HIGHLY EXCITED INDIUM ANTIMONIDEFAUCHET PM.1982; PHYS. STATUS SOLIDI(B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1982; VOL. 110; NO 1; PP. K11-K15; BIBL. 10 REF.Article

SCHEMA DES TRANSITIONS DE RECOMBINAISON PROVOQUANT LES BANDES D'EMISSION A 1,0 EV, 1,2 ET 1,3 EV DANS GAAS NGLINCHUK KD; PROKHOROVICH AV; RODIONOV VE et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 1; PP. 35-39; BIBL. 10 REF.Article

INFLUENCE DE LA RECOMBINAISON SUR LA COMPOSANTE DE LONGUE DUREE DE LA CINETIQUE DU PHOTOCOURANT PRIMAIREBLAZHKO NA; SAL'KOV EA; KHVOSTOV VA et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 4; PP. 760-765; BIBL. 10 REF.Article

MODELING OF EMITTER-BASE BULK AND PERIPHERAL SPACE-CHARGE-LAYER RECOMBINATION CURRENTS IN BIPOLAR TRANSISTORS.CHAMBERLAIN NG; ROULSTON DJ.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 12; PP. 1345-1346; BIBL. 8 REF.Article

THE TURN-OFF OF THYRISTORS WITH ENHANCED RECOMBINATION ZONES FOR A HIGH INJECTION LEVEL.GOBARTYUK AI; UVAROV AI.1976; RADIO ENGNG ELECTRON. PHYS.; U.S.A.; DA. 1976; VOL. 21; NO 7; PP. 103-106; BIBL. 6 REF.Article

FORMATION OF RECOMBINATION CENTERS IN EPITAXIAL GAAS DUE TO RAPID CHANGES OF THE GROWTH VELOCITYJASTRZEBSKI L; LAGOWSKI J; GATOS HC et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 3; PP. 697-699; BIBL. 7 REF.Article

THE INFLUENCE OF SURFACE RECOMBINATION ON THE DOUBLE-INJECTION NEGATIVE-RESISTANCEBRODKORB W.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. K157-K159; BIBL. 6 REF.Article

OUTDIFFUSION OF RECOMBINATION CENTERS FROM THE SUBSTRATE INTO LPE LAYERS: GAASJASTRZEBSKI L; LAGOWSKI J; GATOS HC et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 12; PP. 2231-2234; BIBL. 26 REF.Article

MINORITY-CARRIER LIFETIME: CORRELATION WITH IC PROCESS PARAMETERSHUFF HR; CHIU TL.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 7; PP. 1142-1147; BIBL. 37 REF.Article

NOUVEAUX MODES DES ONDES DE RECOMBINAISON DANS DES SEMICONDUCTEURS A PLUSIEURS NIVEAUX PIEGESSABLIKOV VA.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 7; PP. 1340-1347; BIBL. 4 REF.Article

SPIN DEPENDENT SURFACE RECOMBINATION IN SILICON P-N JUNCTIONS: THE EFFECT OF IRRADIATIONKAPLAN D; PEPPER M.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 34; NO 10; PP. 803-805; BIBL. 8 REF.Article

MECANISME DE LA RECOMBINAISON RADIATIVE DES PORTEURS DANS LES CRISTAUX DE CDSE DE FAIBLE RESISTANCE ELECTRIQUELYUBCHENKO AV; FEDOROV AI; SHEJNKMAN MK et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 5; PP. 955-961; BIBL. 15 REF.Article

AUGER RECOMBINATION AND JUNCTION RESISTANCE IN LEAD-TIN TELLURIDE.EMTAGE PR.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2565-2568; BIBL. 7 REF.Article

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