DYNAMIQUE DES ELECTRONS DANS L'ARGON ET LE XENON CONDENSESGUSHCHIN EM; KRUGLOV AA; OBODOVSKIJ IM et al.1982; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1982; VOL. 82; NO 4; PP. 1114-1125; ABS. ENG; BIBL. 25 REF.Article

TIME-RESOLVED MEASUREMENT OF THE ESCAPE OF CHARGE CARRIERS FROM A COULOMBIC POTENTIAL WELL BY DIFFUSIONAL MOTIONEICHHORN M; WILLIG F; CHARLE KP et al.1982; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1982; VOL. 76; NO 9; PP. 4648-4656; BIBL. 24 REF.Article

RESISTIVITE ET COEFFICIENT DE DIFFUSION DES PORTEURS CHAUDS: TECHNIQUES DE MESURES ET APPLICATIONS AU SI-PNDONG OTOUNGA SIMON.1980; ; FRA; DA. 1980; 61 P.: ILL.; 30 CM; BIBL. 6 REF.; TH. 3E CYCLE: SIGNAUX BRUITS, COMPOS. ELECTRON. BRUIT FOND/MONTPELLIER 2/1980/314Thesis

THEORY OF RESONANT ELECTRON SCATTERING IN AMORPHOUS METALS = THEORIE DE LA DIFFUSION RESONNANTE DES ELECTRONS DANS LES METAUX AMORPHESVLADAR K; ZAWADOWSKI A.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 9; PP. 649-652; BIBL. 22 REF.Article

ALLOY SCATTERING IN TERNARY III-V COMPOUNDS.HARRISON JW; HAUSER JR.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 12; PP. 5347-5350; BIBL. 12 REF.Article

DYNAMICAL ELECTRON SCATTERING BY A LAYER STRUCTURE: GEOMETRICAL RESONANCESGERLACH E; PAIER K.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 92; NO 2; PP. 495-499; ABS. GER; BIBL. 4 REF.Article

STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article

STOFFSYSTEME FUER ABSORPTIONSWAERMEPUMPEN = ABSORPTION HEAT PUMP REFRIGERANTS = FLUIDES CALOPORTEURS POUR POMPES A CHALEUR A ABSORPTIONSTEIMLE F; RENZ M.1981; VDI-BER.; ISSN 0083-5560; DEU; DA. 1981; NO 427; PP. 37-44; BIBL. 6 REF.Conference Paper

RELAXATION D'ENERGIE ET RELAXATION D'IMPULSION DES ELECTRONS CHAUDS DANS LA DIFFUSION PAR LES ACCEPTEURS NEUTRES DANS LES SEMICONDUCTEURS CUBIQUESREBANE YU T.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2179-2185; BIBL. 7 REF.Article

FURTHER COMMENTS ON "EFFECTS OF CARRIER DIFFUSION ON THE SMALL-SIGNAL BEHAVIOR OF IMPATT DIODES"BRAZIL TJ; SCANLAN JO.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2167; BIBL. 2 REF.Article

MULTIPLE SCATTERING OF CONDUCTION ELECTRONS AT DISORDERED METAL SURFACESLESSIE D.1979; PHYS. REV., B; USA; DA. 1979; VOL. 20; NO 6; PP. 2491-2505; BIBL. 38 REF.Article

MESURE DE LA LONGUEUR DE DIFFUSION DE PORTEURS DE CHARGES MINORITAIRES DANS LES STRUCTURES P.N.LOVYAGIN RN; SEMENOVA NR.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; NO 6; PP. 156-158; BIBL. 5 REF.Article

CYCLOTRON RESONANCE AND CARRIER SCATTERING PROCESSES IN ANTHRACENE CRYSTALS.BURLAND DM; KONZELMANN U.1977; J. CHEM. PHYS.; U.S.A.; DA. 1977; VOL. 67; NO 1; PP. 319-331; BIBL. 59 REF.Article

COEFFICIENT DE DIFFUSION DES ELECTRONS CHAUDS DANS LE GERMANIUMASHMONTAS S; SUBACHYUS L.1977; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1977; VOL. 17; NO 1; PP. 71-78; ABS. LITU. ANGL.; BIBL. 16 REF.Article

CONDUCTIVITE, DIFFUSION ET MOBILITE DES PORTEURS DANS UN CRISTAL LIQUIDE NEMATIQUEGRITSENKO NI; MOSHEL NV.1980; UKR. FIZ. Z. (KIEV, 1967); ISSN 0503-1265; UKR; DA. 1980; VOL. 25; NO 11; PP. 1830-1835; ABS. ENG; BIBL. 12 REF.Article

DERIVE DES ELECTRONS DANS L'ARGON CONDENSEGUSHCHIN EM; KRUGLOV AA; LEBEDEV AN et al.1980; ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1980; VOL. 78; NO 4; PP. 1543-1550; ABS. ENG; BIBL. 23 REF.Article

THE ANISOTROPIC CARRIER MOBILITY DUE TO DISLOCATIONS IN III-V COMPOUNDS.BOOYENS H; VERMAAK JS; PROTO GR et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 3 PART. 1; PP. 1173-1176; BIBL. 7 REF.Article

HOT-ELECTRON DIFFUSION NOISE IN N-SILICON USING A RADIOMETRIC METHOD IN THE X-BAND REGION.ZIMMERMANN J; BONFILS S; LEROY Y et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 5; PP. 245-247; BIBL. 12 REF.Article

RAMAN SCATTERING MEASUREMENT OF THE FREE-CARRIER CONCENTRATION AND OF THE IMPURITY LOCATION IN BORON-IMPLANTED SILICON.BESERMAN R; BERNSTEIN T.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 4; PP. 1548-1550; BIBL. 16 REF.Article

VARIATION ANGULAIRE DU FACTEUR DE REFLEXION SPECULAIRE DES ELECTRONS DU BISMUTH PAR UN PLAN BINAIRETSOJ VS; TSOJ NP.1977; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1977; VOL. 73; NO 7; PP. 289-298; ABS. ANGL.; BIBL. 13 REF.Article

NONEQUILIBRIUM PHONON SPECTROSCOPY: A NEW TECHNIQUE FOR STUDYING INTERVALLEY SCATTERING IN SEMICONDUCTORSCOLLINS CL; YU PY.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 4; PP. 2602-2604; BIBL. 15 REF.Article

FLUCTUATIONS DE LA RESISTANCE D'UN SYSTEME DESORDONNE FINIMEL'NIKOV VI.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 3; PP. 782-786; BIBL. 7 REF.Article

THE EFFECT OF CARRIER DIFFUSION ON LASER HEATING OF LIGHTLY DAMAGED SEMICONDUCTORSWILCOX JZ.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2866-2878; BIBL. 13 REF.Article

CONSIDERATION DE LA REEMISSION DANS UN PROBLEME DE DIFFUSION DES PORTEURS MINORITAIRES DANS DES SEMICONDUCTEURS A BANDES DIRECTESROSSIN VV; VINKE AL; SIDOROV VG et al.1979; FIZ. TEKH. POPUPROVODN.; SUN; DA. 1979; VOL. 13; NO 6; PP. 1104-1109; BIBL. 12 REF.Article

TENSION PHOTOVOLTAIQUE TRANSVERSALE DANS SI DUE A L'ECHANGE DE POPULATIONS D'ELECTRONS ENTRE VALLEESZHAD'KO IP; ROMANOV VA; SERDEGA BK et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 9; PP. 1728-1733; BIBL. 9 REF.Article