REVETEMENTS METALLIQUES: QUELQUES PROBLEMES INDUSTRIELS D'ACTUALITE = METAL COATINGS: SOME INDUSTRIAL PROBLEMS NOWDORE R.1982; TECH. MOD.; ISSN 0040-1250; FRA; DA. 1982; VOL. 74; NO 7-8; PP. 32-37; BIBL. 13 REF.Article

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COMPOSITES = LES MATERIAUX COMPOSITESJANES S.1979; INTERCERAM; DEU; DA. 1979; VOL. 28; NO 3; PP. 359-364; BIBL. 80 REF.Article

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LOW-PRESSURE SILICON EPITAXYKRULLMANN E; ENGL WL.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 491-497; BIBL. 8 REF.Article

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