ULTRASONIC WAVE VELOCITIES AND ATTENUATION IN IVB-VB-VIB CHALCOGENIDE GLASSES: 2-300 K.FARLEY JM; SAUNDERS GA.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 18; NO 3; PP. 417-427; BIBL. 35 REF.Article

THRESHOLD SWITCHING CHARACTERISTICS.ESQUEDA P; HENISCH HK.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 22; NO 1; PP. 97-108; BIBL. 17 REF.Article

RESONANCE ABSORPTION IN THE AMORPHOUS SEMICONDUCTOR SI₁₂-GE₁₀-AS₃₀-TE₄₈.BARAKAT MA; KAO KC; BRIDGES E et al.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 18; NO 2; PP. 209-215; BIBL. 10 REF.Article

EXPERIMENTAL EVIDENCE OF ENERGY-CONTROLLED SWITCHING IN AMORPHOUS SEMICONDUCTORS.SAJI M; LEUNG CH; KAO KC et al.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 2; PP. 147-158; BIBL. 12 REF.Article

PASSAGE D'UN MECANISME ELECTRONIQUE DE SEUIL DE COMMUTATION A UN MECANISME THERMIQUE DANS LES VERRES DE CHALCOGENURESGURIN NT; SEMAK DG; FEDAK VV et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 1; PP. 16-23; BIBL. 23 REF.Article

THE MOBILITY OF PHOTO-INDUCED CARRIERS IN DISORDERED AS₂TE₃ AND AS₃₀TE₄₈SI₁₂GE₁₀.MARSHALL JM; OWEN AE.1975; PHILOS. MAG.; G.B.; DA. 1975; VOL. 31; NO 6; PP. 1341-1356; BIBL. 17 REF.Article

THERMAL CONDUCTIVITY AND SPECIFIC HEAT OF TELLURIUM-BASED CHALCOGENIDE GLASSES.THOMAS CB; SAVAGE JA.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 1; PP. 139-143; BIBL. 5 REF.Article

TRANSIENT CONDUCTION CHARACTERISTICS OF AMORPHOUS THIN FILMS OF SI₁₂TE₄₈AS₃₀GE₁₀ IN THE PRE-WITCHING REGIME.REEHAL HS; THOMAS CB.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 5; PP. 737-752; BIBL. 21 REF.Article

DIRECT OBSERVATION OF SWITCHING FILAMENTS IN CHALCOGENIDE GLASSES.SAJI M; KAO KC.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 22; NO 1; PP. 223-227; BIBL. 8 REF.Article

WEAKLY FREQUENCY-DEPENDENT ELECTRICAL CONDUCTIVITY IN A CHALCOGENIDE GLASS.JONSCHER AK; FROST MS.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 37; NO 2; PP. 267-273; BIBL. 13 REF.Article

ELECTROLUMINESCENCE FROM THE ON STATE OF A THIN-FILM CHALCOGENIDE GLASSWALSH PJ; ISHIOKA S; ADLER D et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 7; PP. 593-595; BIBL. 16 REF.Article

CARACTERISTIQUES DE LA REGION DE PREDISRUPTION DANS LES SEMICONDUCTEURS AMORPHESSHIRAISHI T; KUROSU T; IIDA M et al.1976; OYO BUTURI; JAP.; DA. 1976; VOL. 45; NO 7; PP. 640-645; ABS. ANGL.; BIBL. 17 REF.Article

COMMUTATION ET ETATS LOCALISES DANS LES VERRES DE CHALCOGENURESGURIN NT; MIKHAL'KO IP; SEMAK DG et al.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 4; PP. 552-554; ABS. ANGL.; BIBL. 15 REF.Article

ESR STUDIES OF MN²⁺ IN MULTICOMPONENT AMORPHOUS SEMICONDUCTORS.KUMEDA M; KOBAYASHI N; SUZUKI M et al.1975; JAP. J. APPL. PHYS.; JAP.,; DA. 1975; VOL. 14; NO 2; PP. 173-180; BIBL. 15 REF.Article

THE EFFECTS OF ELECTRODE MATERIALS ON THE SWITCHING BEHAVIOUR OF THE AMORPHOUS SEMICONDUCTOR SI₁₂-GE₁₀-AS₃₀-TE₄₈.PETRILLO GA; KAO KC.1974; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1974; VOL. 16; NO 2; PP. 247-257; BIBL. 13 REF.Article

CONDUCTIVITY EFFECTS IN AMORPHOUS CHALCOGENIDE FILMSZVI YANIV.1978; VACUUM; GBR; DA. 1978; VOL. 28; NO 12; PP. 535-539; BIBL. 16 REF.Conference Paper

COMPOSITION DEPENDENCES OF ELECTRICAL AND OPTICAL PROPERTIES OF AS_XTE_90-XGE₁₀ AND AS₃₅TE₅₅GE_10-XSI_X GLASSES.SUZUKI M; OHDAIRA H; MATSUMI T et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 2; PP. 221-226; BIBL. 20 REF.Article

AN INTERPRETATION OF TRANSIENT SWITCHING PROCESS IN AMORPHOUS FILMS OF AS₃₀TE₄₈GE₁₀SI₁₂MIYAZONO T; IIDA M.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 8; PP. 1383-1390; BIBL. 28 REF.Article

THERMOELECTRIC POWER OF SI-AS-TE AND GE-AS-TE GLASSES.TOHGE N; MINAMI T; TANAKA M et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 6; PP. 977-979; BIBL. 10 REF.Article

PREPARATION AND ELECTRICAL CONDUCTIVITY OF SOME CHALCOGENIDE GLASSES AT HIGH TEMPERATURES.BAKER EH; WEBB LM.1974; J. MATER. SCI.; G.B.; DA. 1974; VOL. 9; NO 7; PP. 1128-1132; BIBL. 17 REF.Article

ETUDE PHYSIQUE DES VERRES SEMI-CONDUCTEURS BINAIRES A BASE DE TELLURE)ROSSIER D; CORNET J.1973; DGRST-7270145; FR.; DA. 1973; PP. (36 P.); H.T. 28; BIBL. DISSEM.; (RAPP. FINAL, ACTION CONCERTEE: PHYS. ELECTRON.)Report

CONDUCTION MECHANISMS IN AMORPHOUS AND DISORDERED SEMICONDUCTORS EXPLAINED BY A MODEL OF MEDIUM-RANGE DISORDER OF COMPOSITIONPISTOULET B; ROBERT JL; DUSSEAU JM et al.1978; J. NON CRYST. SOLIDS; NLD; DA. 1978; VOL. 29; NO 1; PP. 29-40; BIBL. 28 REF.Article

CHARGE SCREENING LENGTH IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORSMARSHALL JM.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 38; NO 4; PP. 407-417; BIBL. 12 REF.Article

STUDY OF TRAPPING IN AMORPHOUS MATERIALS.BOTILA T; HENISCH HK.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 38; NO 1; PP. 331-337; ABS. ALLEM.; BIBL. 23 REF.Article

ANALYSE PAR FLUORESCENCE DE RX DE FILMS DE COMPOSITION COMPLEXEDARASHKEVICH VR; MALYKOV BA; MINAEV VS et al.1974; ZAVODSK. LAB.; S.S.S.R.; DA. 1974; VOL. 40; NO 6; PP. 680-683; BIBL. 6 REF.Article