La porte monumentale de Chéchanq III : Rapport préliminaire 1996 = The monumental door of Sheshonq III: preliminary report 1996HAIRY, I.Bulletin de la Société française des fouilles de Tanis. 1995, Num 9, pp 51-69, issn 1268-4481, 15 p.Article

1.3 μm range effectively cylindrical In_0.53Ga_0.47As/In_0.52Al_0.48As quantum wires grown on (22 1)A InP substrates by molecular beam epitaxySHIMOMURA, S; TORITSUKA, T; UENISHI, A et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 346-349, issn 1386-9477, 4 p.Conference Paper

Les Fils Royaux de Ramsès : Une nouvelle hypothèse = The Royal sons of Ramses : a new hypothesisCOLLOMBERT, P.Göttinger Miszellen. 1996, Num 151, pp 23-35, issn 0344-385XArticle

2004 international conference on indium phosphide and related materials (16th IPRM, conference proceedings)International Conference on Indium Phosphide and Related Materials. 2004, isbn 0-7803-8595-0, 1Vol, XIV-778 p, isbn 0-7803-8595-0Conference Proceedings

Gallium nitride materials and devices II (22-25 January 2007, San Jose, California, USA)Morkoç, Hadis; Litton, Cole W.Proceedings of SPIE, the International Society for Optical Engineering. 2007, issn 0277-786X, isbn 978-0-8194-6586-3, 1Vol, various pagings, isbn 978-0-8194-6586-3Conference Proceedings

GaInAs/AlGaInAs DH and MQW lasers with 1.5-1.7 μm lasing wavelengths grown by atmospheric pressure MOVPEGESSNER, R; DRUMINSKI, M; BESCHORNER, M et al.Electronics Letters. 1989, Vol 25, Num 8, pp 516-517, issn 0013-5194, 2 p.Article

Impact ionization rates in an In Ga As/In Al As superlatticeKAGAWA, T; KAWAMURA, Y; ASAI, H et al.Applied physics letters. 1989, Vol 55, Num 10, pp 993-995, issn 0003-6951, 3 p.Article

Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsROCKETT, P. I.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1573-1579, issn 0018-9383Article

The fabrication of sub-micron width mesas in GaAs/Ga_1-xAl_xAs heterojunction materialHUTCHINGS, K. M; GRASSIE, A. D. C; LAKRIMI, M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1057-1059, issn 0268-1242Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Structural and electrical investigation of high temperature Fe implanted gainp layers lattice matched to GaAsCESCA, T; GASPAROTTO, A; VEMA, A et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 276-277, isbn 0-7803-8595-0, 1Vol, 2 p.Conference Paper

The GaAs scene in 1962: the battle with SiHILSUM, Cyril.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015028.1-015028.4Article

Application of Keating's valence force field model to non-ideal wurtzite materialsCAMACHO, D; NIQUET, Y. M.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 5, pp 1361-1364, issn 1386-9477, 4 p.Article

Present and Future of Super High Efficiency Multi-Junction Solar CellsYAMAGUCHI, Masafumi; TAKAMOTO, Tatsuya; ARAKI, Kenji et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 688906.1-688906.12, issn 0277-786X, isbn 978-0-8194-7064-5Conference Paper

The intrinsic relationship between the kink-and-tail and box-shaped zinc diffusion profiles in n-GaSbHONG YE; LIANGLIANG TANG; KUIJUN LI et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015001.1-015001.6Article

Precise Semiconductor Nanowire Placement Through DielectrophoresisRAYCHAUDHURI, Sourobh; DAYEH, Shadi A; DELI WANG et al.Nano letters (Print). 2009, Vol 9, Num 6, pp 2260-2266, issn 1530-6984, 7 p.Article

Group III Nitrides, SiC, and ZnOSTAHLBUSH, Robert; PHILLIPS, Jamie; XING, Grace et al.Journal of electronic materials. 2009, Vol 38, Num 4, issn 0361-5235, 142 p.Serial Issue

Efficient band-pass and stop-band filtering by GaAs―Al_cGa_1―cAs generalized Thue―Morse multibarrier systemsPANCHADHYAYEE, Pradipta.Philosophical magazine (2003. Print). 2013, Vol 93, Num 19-21, pp 2654-2661, issn 1478-6435, 8 p.Article

Lattice controlled transport in quantum wires at low temperaturesBHATTACHARYA, D. P; MIDDAY, S; NAG, S et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 47, pp 264-269, issn 1386-9477, 6 p.Article

Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength rangeWINDEN, A; MIKULICS, M; GRÜTZMACHER, D et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 40, issn 0957-4484, 405302.1-405302.7Article

Chemical control over surface atomic structure and electronic properties of III-V semiconductorsLEBEDEV, Mikhail V.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65960Z.1-65960Z.10, issn 0277-786X, isbn 978-0-8194-6732-4, 1VolConference Paper

Mechanisms of III-V light-emitting diode bulk degradationTORCHINSKAYA, T. V.SPIE proceedings series. 1998, pp 200-202, isbn 0-8194-2756-X, 2VolConference Paper

Single-stage calculation of the total energy of compositionally modulated III-V alloysGLAS, F.Journal of applied physics. 1989, Vol 66, Num 4, pp 1667-1670, issn 0021-8979, 4 p.Article

Monte Carlo particle investigation of noise in short n⁺-n-n⁺ GaAs diodesJUNEVICIUS, D; REKLAITIS, A.Electronics Letters. 1988, Vol 24, Num 21, pp 1307-1308, issn 0013-5194Article

Computer simulation experiment on the mm-wave properties of indium phosphide double drift impattsBANERJEE, J. P; PATI, S. P; ROY, S. K et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp 359-364, issn 0031-8965Article