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EFFET PHOTOELECTROCHIMIQUE SUR LES OXYDES DE QUELQUES METAUX DE TRANSITIONCLECHET P; MARTIN JR; OLIER R et al.1976; C.R. ACAD. SCI.; FR.; DA. 1976; VOL. 282; NO 18; PP. 887-890; ABS. ANGL.; BIBL. 9 REF.Article

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PROPRIETES ELECTROPHYSIQUES DE STRUCTURES ELECTROLYTETYAGAJ VA; PETROVA NA; SHIRSHOV YU M et al.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 10; PP. 80-88; H.T. 2; BIBL. 14 REF.Serial Issue

A 4PI BETA -GAMMA -COINCIDENCE SPECTROMETER USING SI(LI) AND NAI(TL) DETECTORSGILS HJ; FLOTHMANN D; LOHKEN R et al.1972; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1972; VOL. 105; NO 2; PP. 179-188; BIBL. 27 REF.Serial Issue

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ELECTRONIC PROPERTIES OF THE SI-SIO₂ INTERFACE AS A JUNCTION OF OXIDE GROWTH CONDITIONS (II)PAUTRAT JL; PFISTER JC.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 11; NO 2; PP. 669-675; BIBL. 13 REF.Serial Issue

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SEMICONDUCTING GLASS-CERAMICS IN THE SYSTEM CAO-MGO-AL₂-O₃-SIO₂ WITH ADDED IRON OXIDESROUSE CG; WILLIAMSON J.1975; IN: SPEC. CERAM. PROC. 6TH SYMP. SPEC. CERAM.; STOKE-ON-TRENT; 1974; STOKE-ON-TRENT; BR. CERAM. RES. ASSOC.; DA. 1975; PP. 91-105; BIBL. 1 REF.Conference Paper