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Effets non réciproques dans des structures hétérogènes de semiconducteursBELYANTSEV, A. M; KOZLOV, V. A; MAZOV, L. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 655-660, issn 0015-3222Article

Heterolayer mobility in the Block-Grüneisen rangePRICE, P. J.Solid state communications. 1984, Vol 51, Num 8, pp 607-608, issn 0038-1098Article

STOFFSYSTEME FUER ABSORPTIONSWAERMEPUMPEN = ABSORPTION HEAT PUMP REFRIGERANTS = FLUIDES CALOPORTEURS POUR POMPES A CHALEUR A ABSORPTIONSTEIMLE F; RENZ M.1981; VDI-BER.; ISSN 0083-5560; DEU; DA. 1981; NO 427; PP. 37-44; BIBL. 6 REF.Conference Paper

Large carrier mobilities in octathio[8]circulene crystals: a theoretical studyMOHAKUD, Sasmita; PATIO, Swapan K.Journal of material chemistry. 2009, Vol 19, Num 25, pp 4356-4361, issn 0959-9428, 6 p.Article

Carrier mobility in doped nondegenerate semiconductorsKHAMIDULLINA, N. M.Physica status solidi. B. Basic research. 1983, Vol 120, Num 1, pp 55-63, issn 0370-1972Article

RELATION ENTRE CONCENTRATION ET MOBILITE DES PORTEURS DANS LES PHASES DE TYPE METALLIQUENEMCHENKO VF.1979; DOKL. AKAD. NAUK UKR. S.S.R., A; UKR; DA. 1979; NO 7; PP. 582-584; ABS. ENG; BIBL. 8 REF.Article

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TUNNELING IN TILTED SI INVERSION LAYERSMATHESON TG; HIGGINS RJ.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 4; PP. 2633-2644; BIBL. 22 REF.Article

High-field electron mobility and temperature in bulk semiconductorsARORA, V. K.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7297-7298, issn 0163-1829Article

New method of definition of mobility of nonequilibrium carriers in semiconductorsABDULLAEV, A. A; ALIEV, A. R; KAMILOV, I. K et al.Physica. B, Condensed matter. 2005, Vol 357, Num 3-4, pp 248-252, issn 0921-4526, 5 p.Article

Hole drift mobilities in the glassy state of arylaldehyde and arylketone hydrazonesNISHIMURA, K; INADA, H; KOBATA, T et al.Molecular crystals and liquid crystals (1991). 1992, Vol 216-8, pp 235-242, issn 1056-8816Conference Paper

Scattering matrix representation for the microwave Hall effect in the depolarization regimeCAVERLY, R. H.Journal of applied physics. 1985, Vol 58, Num 8, pp 3124-3128, issn 0021-8979Article

An electron mobility model for wurtzite GaNSCHWIERZ, Frank.Solid-state electronics. 2005, Vol 49, Num 6, pp 889-895, issn 0038-1101, 7 p.Article

Temperature dependent electron transport in grapheneTAN, Y.-W; ZHANG, Y; STORMER, H. L et al.The European physical journal. Special topics. 2007, Vol 148, pp 15-18, 4 p.Conference Paper

Analysis of the traveling-wave technique for measuring mobilities in low-conductivity semiconductorsFRITZSCHE, H.Physical review. B, Condensed matter. 1984, Vol 29, Num 12, pp 6672-6678, issn 0163-1829Article

Single longitudinal-mode optical phonon scattering in Ga_0.47In_0.53AsPEARSALL, T. P; CARLES, R; PORTAL, J. C et al.Applied physics letters. 1983, Vol 42, Num 5, pp 436-438, issn 0003-6951Article

Anisotropie de la mobilité des trous dans le tellureGORLEJ, P. N; KUSHNIR, N. YA.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 2097-2098, issn 0015-3222Article

Photo-generated time-of-flight mobility measurements in novel electron transport material: 2,5-dibenzthiazolyl thiopheneQURESHI, M; SUNDAR MANOHARAN, S; SINGH, S. P et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 9, pp R60-R63, issn 0031-8965Article

Phonon-scattering-limited mobility in a quantum-well heterostructureARORA, V. K; NAEEM, A.Physical review. B, Condensed matter. 1985, Vol 31, Num 6, pp 3887-3892, issn 0163-1829Article

Instabilité de dérive dans les structures semiconductrices stratifiées périodiquesBULGAKOV, A. A; YAKOVENKO, V. M.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1984, Vol 27, Num 4, pp 518-522, issn 0021-3462Article

Dielectric properties of ice in the presence of space chargePETRENKO, V. F; RYZHKIN, I. A.Physica status solidi. B. Basic research. 1984, Vol 121, Num 1, pp 421-427, issn 0370-1972Article

Electron mobility in heavily doped siliconSY, H. K; ONG, C. K.Solid state communications. 1984, Vol 52, Num 10, pp 881-883, issn 0038-1098Article

Giant enhancement of impurity scattering at weakly bonded localised defects in semiconductorsNINNO, D; JAROS, M.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 28, pp L745-L750, issn 0022-3719Article

Impurity-limited mobility of semiconducting thin wireLEE, J; SPECTOR, H. N.Journal of applied physics. 1983, Vol 54, Num 7, pp 3921-3925, issn 0021-8979Article