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Convergent beam electron diffractionCHERNS, D.Journal de physique. IV. 1993, Vol 3, Num 7, pp 2113-2122, issn 1155-4339, 3Conference Paper

Threading dislocation reduction in GaAs on Si with a single InGaAs intermediate layerSHIBA, Y; ASAI, K; KAMEI, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 3, pp 1466-1471, issn 0021-4922, 1Article

Heterogeneous nucleation of planar defects in Mn-doped ZnSe/GaAsMOLINA, S. I; BROWN, P. D; HUMPHREY, C. J et al.Journal of crystal growth. 1995, Vol 156, Num 3, pp 163-168, issn 0022-0248Article

Mutual attraction of a dislocation to a bimetallic interface and a theorem on proportional anisotropic bimetalsBARNETT, D. M; LOTHE, J.International journal of solids and structures. 1995, Vol 32, Num 3-4, pp 291-301, issn 0020-7683Article

Lattice matching periodic interfacial dislocation network in surfactant-mediated growth of Ge on Si(111)HOR-VON HOEGEN, M; HENZLER, M.Physica status solidi. A. Applied research. 1994, Vol 146, Num 1, pp 337-352, issn 0031-8965Article

Dissociation of misfit dislocation nodes in (111) GeSi/Si interfacesERNST, F.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1993, Vol 68, Num 6, pp 1251-1272, issn 0141-8610Article

On the formation of edge dislocations in In_xGa_1-xAs/GaAs heterostructures with x<0.20ULHAQ-BOUILLET, C; LEFEBVRE, A.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1993, Vol 68, Num 6, pp 1273-1294, issn 0141-8610Article

Scanning tunneling microscopy observation of dislocations with superlattice structure in graphiteOUSEPH, P. J.Applied surface science. 2000, Vol 165, Num 1, pp 38-43, issn 0169-4332Article

Misfit dislocation distributions in capped (buried) strained semiconductor layersGOSLING, T. J; BULLOUGH, R; JAIN, S. C et al.Journal of applied physics. 1993, Vol 73, Num 12, pp 8267-8278, issn 0021-8979Article

Strain relaxation of graded SiGe buffers grown at very high ratesROSENBLAD, C; STANGL, J; MÜLLER, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 20-23, issn 0921-5107Conference Paper

Atomistic study of partial misfit dislocations in Ge/Si(001) heterostructuresICHIMURA, M; NARAYAN, J.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1996, Vol 73, Num 3, pp 767-778, issn 1364-2804Article

A dislocation in a compositionally graded epilayerTONG-YI ZHANG.Physica status solidi. A. Applied research. 1995, Vol 148, Num 1, pp 175-189, issn 0031-8965Article

Rearrangement of misfit dislocations in GaAs on Si by post-growth annealingTAMURA, M; YODO, T; SAITOH, T et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 654-660, issn 0022-0248, 1Conference Paper

Influence of the interatomic potential on the structure of dislocations in a monolayerJOOS, B; REN, Q; DUESBERY, M. S et al.Surface science. 1994, Vol 302, Num 3, pp 385-394, issn 0039-6028Article

Observation of threading dislocation generation process in highly lattice-mismatched heteroepitaxyKAWAI, T; YONEZU, H; SAITO, D et al.Japanese journal of applied physics. 1994, Vol 33, Num 12B, pp L1740-L1743, issn 0021-4922, 2Article

Energy of arrays of nonperiodic interacting dislocations in semiconductor strained epilayers : implications for strain relaxationUMA JAIN; JAIN, S. C; ATKINSON, A et al.Journal of applied physics. 1993, Vol 73, Num 4, pp 1773-1780, issn 0021-8979Article

The energetics of dislocation array stability in strained epitaxial layersGOSLING, T. J; WILLIS, J. R; BULLOUGH, R et al.Journal of applied physics. 1993, Vol 73, Num 12, pp 8297-8303, issn 0021-8979Article

The enumeration and transformation of dislocation dipoles. II. The transformation of interstitial dipoles into vacancy dipoles in an open dislocation arrayBROWN, L. M; NABARRO, F. R. N.Philosophical magazine (2003. Print). 2004, Vol 84, Num 3-5, pp 441-450, issn 1478-6435, 10 p.Conference Paper

The shape of a blocked deformation twinMÜLLNER, P; SOLENTHALER, C.Philosophical magazine letters. 1994, Vol 69, Num 4, pp 171-175, issn 0950-0839Article

Homogeneous nucleation of gaseous pores in a two-component solution of vacancies and gas atomsALEKSEECHKIN, N. V; OSTAPCHUK, P. N; TYBULEWICZ, A et al.Physics of the solid state. 1993, Vol 35, Num 4, pp 479-484, issn 1063-7834Article

Electron energy-loss spectroscopic study of the surface of ceria abrasivesGILLISS, Shelley R; BENTLEY, James; CARTER, C. Barry et al.Applied surface science. 2005, Vol 241, Num 1-2, pp 61-67, issn 0169-4332, 7 p.Conference Paper

Improved 3C-SiC films epitaxially grown on Si by flash lamp processingSTOEMENOS, J; PANKNIN, D; EICKHOFF, M et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 2, pp G136-G143, issn 0013-4651Article

Segregation of Ba²⁺, Sr²⁺, Ce⁴⁺ and Zr⁴⁺ to UO₂ surfacesSTANEK, C. R; BRADFORD, M. R; GRIMES, R. W et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 27, pp 2699-2714, issn 0953-8984, 16 p.Article

Coordination dependence of hyperfine interactions at impurities on fcc metal surfaces. I. Electric-field gradientCOTTENIER, S; BELLINI, V; CAKMAK, M et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 15, pp 155418.1-155418.10, issn 1098-0121Article