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Results 1 to 25 of 58946

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TEMPERATURE DEPENDENCE OF THE SCHOTTKY BARRIER HEIGHT IN GALLIUM ARSENIDEHACKAM R; HARROP P.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 5; PP. 669-672; ABS. RUSSE; BIBL. 14 REF.Serial Issue

APPLICATION DU PROCEDE SUBILO A LA REALISATION DE DISPOSITIFS SCHOTTKY.DE BREBISSON M; MOUSSIE M.1977; DGRST-7670650; FR.; DA. 1977; PP. 1-38; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

THE MODELLING OF EDGE CURRENT IN SCHOTTKY BARRIER DEVICES.AL BAIDHAWI K; HOWES MJ; MORGAN DV et al.1978; J. PHYS. D; G.B.; DA. 1978; VOL. 11; NO 8; PP. 1203-1210; BIBL. 8 REF.Article

CONTACTLESS MEASUREMENT OF SCHOTTKY BARRIER HEIGHTS USING SECONDARY ELECTRONSHUANG HCW; HO PS.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 5; PP. 482-484; BIBL. 10 REF.Article

DETECTEURS A BARRIERE DE SURFACE EN AU-SI A SENSIBILITE AMELIOREE DANS L'ULTRAVIOLET PROCHEGATSENKO LS; GOLOUNER TM; GROSHKOVA GN et al.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 5; PP. 272-273; BIBL. 6 REF.Article

THE METAL-OVERLAP LATERALLY-DIFFUSED (MOLD) SCHOTTKY DIODE.RUSU A; BULUCEA C; POSTOLACHE C et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 499-506; H.T. 1; BIBL. 29 REF.Article

INTERDIFFUSION AND SCHOTTKY-BARRIER-HEIGHT VARIATIONS IN AU-W(TI)/N-GAAS CONTACTS.DAY HM; CHRISTOU A; MACPHERSON AC et al.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 4; PP. 939-942; BIBL. 10 REF.Article

SHALLOW PTSI-SI SCHOTTKY BARRIER CONTACTS FORMED BY A MULTILAYER METALLIZATION TECHNIQUETSAUR BY; SILVERSMITH DJ; MOUNTAIN RW et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5243-5246; BIBL. 8 REF.Article

QUELQUES QUESTIONS DE LA THEORIE DES DIODES A BARRIERE DE SCHOTTKYSHEKA DI.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 15-21; BIBL. 15 REF.Article

FREQUENCY DEPENDENCE OF C AND DELTA V/DELTA (C-2) OF SCHOTTKY BARRIERS CONTAINING DEEP IMPURITIESZOHTA Y.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 1029-1035; BIBL. 17 REF.Serial Issue

ON THE WIDTH OF SCHOTTKY BARRIERSMOREAU Y; MANIFACIER JC; HENISCH HK et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 137-139; BIBL. 3 REF.Article

SCHOTTKY BARRIERS ON ZNTEBAKER WD; MILNES AG.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 12; PP. 5152-5153; BIBL. 8 REF.Serial Issue

TRANSIENT RADIATION EFFECTS IN GAAS IMPATT DIODESGREILING PT; CLARK J.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 6; PP. 753-754; BIBL. 9 REF.Serial Issue

CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article

TRANSPORT THEORY OF HIGH-FREQUENCY RECTIFICATION IN SCHOTTKY BARRIERSTSANG DW; SCHWARZ SE.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3459-3471; BIBL. 40 REF.Article

THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODESCHING YUAN WU.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2909-2912; BIBL. 5 REF.Article

THE ACCURACY OF SCHOTTKY-BARRIER-HEIGHT MEASUREMENTS ON CLEAN-CLEAVED SILICON.VAN OTTERLOO JD; GERRITSEN LJ.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 723-729; BIBL. 21 REF.Article

SCHOTTKEY RECTIFIERS ON SILICON USING HIGH BARRIERSSTOLT L; BOHLIN K; TOVE PA et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 295-297; BIBL. 6 REF.Article

SCHOTTKY BARRIER TYPE DIODE WITH AN ELECTROCHEMICALLY PREPARED COPOLYMER HAVING PYRROLE AND N-METHYLPYRROLE UNITSKOEZUKA H; ETOH S.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2511-2516; BIBL. 22 REF.Article

PIEZOELECTRIC EFFECT IN AU-CDS SCHOTTKY BARRIER.KUSAKA M; KANAKURA M; OKAZAKI S et al.1977; SURF. SCI.; NETHERL.; DA. 1977; VOL. 64; NO 2; PP. 793-796; BIBL. 7 REF.Article

GENERALISED THERMIONIC-EMISSION THEORY OF CARRIER TRANSPORT THROUGH THIN BASE OF BIPOLAR TRANSISTORPOPOVIC RS.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 3; PP. 111-115; BIBL. 13 REF.Article

MECANISME DE LA SENSIBILITE AUX CONTRAINTES DE DIODES A BARRIERES DE SCHOTTKY EN ARSENIURE DE GALLIUMVYATKIN AP; MAKSIMOVA NK; FILONOV NG et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 7; PP. 1384-1387; BIBL. 15 REF.Article

GENERALIZED THEORY OF CONDUCTION IN SCHOTTKY BARRIERSSIMMONS JG; TAYLOR GW.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 7; PP. 705-709; BIBL. 3 REF.Article

PROPRIETES DE POLARISATION DES DIODES DE CDSNP2MEDVEDKIN GA; OVEZOV K; RUD YU V et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 11; PP. 2081-2085; BIBL. 10 REF.Article

REDISTRIBUTION OF IMPLANTED PHOSPHORUS AFTER PLATINUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY BARRIER DIODESKIKUCHI A; SUGAKI S.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3690-3693; BIBL. 5 REF.Article

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