Etude de la concurrence des oscillations dans les générateurs à diodes de transit à avalancheTOROPIN, V. A.Radiotehnika i èlektronika. 1988, Vol 33, Num 11, pp 2327-2331, issn 0033-8494Article

Time-domain modeling of IMPATT oscillatorsGOELLER, T; KAERTNER, F. X.IEEE transactions on circuits and systems. 1989, Vol 36, Num 7, pp 988-996, issn 0098-4094, 9 p.Article

Circuit losses and efficiency of distributed IMPATT oscillatorsHUBER, S; CLAASSEN, M.AEU. Archiv für Elektronik und Übertragungstechnik. 1988, Vol 42, Num 6, pp 375-379, issn 0001-1096Article

Near state-of-the-art power p⁺-n-n⁺ D-band IMPATT diode on a wafer with ramped n-n⁺ interfaceSINGH, J. K; GOKGOR, H. S; HOWARD, A. M et al.Proceedings of the IEEE. 1987, Vol 75, Num 12, pp 1688-1690, issn 0018-9219Article

Ionisation par chocs de niveaux profonds dans les diodes à temps de transit d'ionisation en avalanche (IMPATT) à base d'arséniure de galliumLUK'YANCHIKOVA, N. B.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 2, pp 332-337, issn 0015-3222Article

Determination of series resistance of an IMPATT diode by computer simulation methodSATAPATHY, S; PANDA, A. K; PATI, S. P et al.SPIE proceedings series. 1998, pp 672-675, isbn 0-8194-2756-X, 2VolConference Paper

Study of asynchronous influence on IMPATT oscillatorTOROPIN, V. A.Radiotehnika i èlektronika. 1990, Vol 35, Num 4, pp 816-821, issn 0033-8494Article

Local electrical activity of impact avalanche transit time diodes by the scanning transmission electron-beam-induced current techniqueCABANEL, C; MAYA, H; LAVAL, J. Y et al.Philosophical magazine letters. 1999, Vol 79, Num 2, pp 55-61, issn 0950-0839Article

Experiments with noise generation in IMPATT-diode oscillatorsBELYAEV, R. V; ZHERNOVENKOV, A. S; ZALOGIN, N. N et al.Journal of communications technology & electronics. 1996, Vol 41, Num 16, pp 1395-1399, issn 1064-2269Article

Studies on the high-frequency properties of <111>, <110> oriented GaAs IMPATT diodesPATI, S. P; MUKHERJEE, R; BANERJEE, J. P et al.Applied physics. A, Solids and surfaces. 1993, Vol 56, Num 4, pp 375-380, issn 0721-7250Article

DOUBLE VELOCITY IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 817-819; BIBL. 9 REF.Article

Space charge induced variation in silicon double drift IMPATT diode parametersSHUKLA, S. R.IEE proceedings. Circuits, devices and systems. 1997, Vol 144, Num 1, pp 36-39, issn 1350-2409Article

Calculation of phase distortion due to tunnel injection in heterojunction IMPATTsDASH, G. N; PATI, S. P.Electronics Letters. 1992, Vol 28, Num 3, pp 241-243, issn 0013-5194Article

Frequency response of W-band pulsed impatt oscillator operating with a variable loadRAY, U. C; GUPTA, A. K.International journal of infrared and millimeter waves. 1991, Vol 12, Num 7, pp 803-810, issn 0195-9271Article

A generalized simulation method for MITATT-mode operation and studies on the influence of tunnel current on IMPATT propertiesDASH, G. N; PATI, S. P.Semiconductor science and technology. 1992, Vol 7, Num 2, pp 222-230, issn 0268-1242Article

Determination of series resistance of an IMPATT diode by open circuit coltage decay methodHARSH; AGARWAL, S. K; PREM SWARUP et al.Indian journal of pure & applied physics. 1992, Vol 30, Num 2, pp 87-88, issn 0019-5596Article

Reliability critical thermal model for double-drift impatt diodes on diamond heat sinksCSANKY, G.Quality and reliability engineering international. 1990, Vol 6, Num 2, pp 73-84, issn 0748-8017, 12 p.Article

FM NOISE MEASUREMENT OF W-BAND IMPATT DIODES WITH A QUASIOPTICAL DIRECT DETECTION SYSTEMHARTH W; LEISTNER D; FREYER J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 355-356; BIBL. 5 REF.Article

THE IMPATT STORY.DE LOACH BC JR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 7; PP. 657-660; BIBL. 14 REF.Article

MEASUREMENT OF SERIES RESISTANCE IN IMPATT DIODESADLERSTEIN MG; HOLWAY LH JR; CHU SLG et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 179-182; BIBL. 4 REF.Article

Wide-band frequency conversion with power amplification of the input signalsLEVITES, A. A; TIKHOMIROV, A. A.Journal of communications technology & electronics. 1997, Vol 42, Num 12, pp 1399-1402, issn 1064-2269Article

Comments on «theory and measurement of back bias voltage in IMPATT diodes»TINARI, S. C.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 1, pp 72-74, issn 0018-9480Article

SIMULATION NUMERIQUE DE LA CARACTERISTIQUE DES DIODES IMPATTDATIEV KM.1979; ACTA PHYS. CHEM.; HUN; DA. 1979; VOL. 25; NO 1-2; PP. 23-28; ABS. ENG; BIBL. 5 REF.Article

DESIGN CRITERIA FOR THE "HI" DOPING DENSITY IN HI-LO HIGH-EFFICIENCY IMPATTS.BLAKEY PA.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 13; PP. 329-330; BIBL. 12 REF.Article

Effect of punch through on the mm wave properties of Si SDR n⁺np⁺ IMPATT diode in the 94 GHz windowDE, P; MAZUMDER, N; ROY, S. K et al.Physica status solidi. A. Applied research. 1997, Vol 162, Num 2, pp 765-770, issn 0031-8965Article