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Numerische und experimentelle Untersuchungen optisch getriggerter TRAPATT-Dioden = Etude numérique et expérimentale de diodes TRAPATT à commande optique = Numerical and experimental study of optically triggered TRAPPAT diodesGOTTSTEIN, H.AEU. Archiv für Elektronik und Übertragungstechnik. 1985, Vol 39, Num 1, pp 15-19, issn 0001-1096Article
UTILISATION DE QUELQUES JONCTIONS P-N NON-SPECIALISEES EN TANT QUE DIODES D'AVALANCHELEVCHENKOV OI; TSARAPKIN DP.1975; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1975; NO 265; PP. 58-59; BIBL. 1 REF.Article
COMPUTER SIMULATION OF CHARGE GENERATION IN TRAPPATS.BLAKEY PA.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 15; PP. 434-435; BIBL. 8 REF.Article
CONTROL OF TRAPATT OSCILLATIONS BY OPTICALLY GENERATED CARRIERS.KIEHL RA; EERNISSE EP.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 275-277; BIBL. 4 REF.Article
THEORETICAL INVESTIGATIONS OF TRAPATT AMPLIFIER OPERATIONMAINS RK; MASNAR NA; HADDAD GI et al.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 10; PP. 1070-1076; BIBL. 11 REF.Article
DIFFERENCES OF PLASMA FORMATION AND EXTRACTION IN P+NN+ AND N+PP+ SILICON TRAPATT STRUCTURESVAITIEKUNAS F; VYSHNIAUSKAS J.1981; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 822-824; BIBL. 10 REF.Article
DYNAMIC MINORITY-CARRIER STORAGE IN TRAPATT DIODESKIEHL RA.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 217-222; BIBL. 14 REF.Article
STATE-SPACE ESTIMATION OF TRAPATT-DIODE ACTIVE REGION CAPACITANCEMITCHELL RH; OBAH CDG.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 2; PP. 157-160; BIBL. 5 REF.Article
DESIGN AND PERFORMANCE OF I-BAND (8-10-GHZ) TRAPATT DIODES AND AMPLIFIERSOXLEY CH; HOWARD AM; PURCELL JJ et al.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 463-471; BIBL. 18 REF.Article
HARMONIC EFFECTS IN LOCKING AND INITIATION OF TRAPATT OSCILLATIONSMINASIAN RA; FORREST JR.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 1; PP. 13-17; BIBL. 11 REF.Article
X-BAND TRAPATT AMPLIFIERS.OXLEY CH; HOWARD AM; PURCELL JJ et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 14; PP. 416-418; BIBL. 5 REF.Article
NUMERICAL INVESTIGATION OF TURN-ON CONDITIONS IN TRAPATT OSCILLATORS.BOGAN Z; FREY J.1976; I.E.E.E. TRANS. ELECTRON DEVICE; U.S.A.; DA. 1976; VOL. 24; NO 2; PP. 128-135; BIBL. 10 REF.Article
ELECTRONIC FREQUENCY TUNING OF TRAPATT OSCILLATORSNAZOA RUIZ N; AITCHISON CS.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 13; PP. 493-495; BIBL. 4 REF.Article
BEHAVIOR AND DYNAMICS OF OPTICALLY CONTROLLED TRAPATT OSCILLATORSKIEHL RA.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 703-710; BIBL. 13 REF.Article
FREQUENCY TUNING OF MICROSTRIP TRAPATT OSCILLATORSBOOTH PL; LONGLEY SR; NEWTON BH et al.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 1; PP. 6-10; BIBL. 8 REF.Article
TRANSIENT ANALYSIS OF THE TRAPATT MODE IN AVALANCHE DIODESKHOCHNEVIS RAD M; LOMAX RJ; HADDAD GI et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1245-1252; BIBL. 11 REF.Article
IMPROVED PERFORMANCE OF X-BAND TRAPATT'SGRACE MI; KROGER H; TELIO J et al.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 11; PP. 1443-1444; BIBL. 7 REF.Serial Issue
Application of selective epitaxial growth in MBE for short-duration gating systemsCERS, V. A; BALLIK, E. A.Thin solid films. 1998, Vol 321, Num 1-2, pp 228-233, issn 0040-6090Conference Paper
EXPERIMENTAL STUDY OF SERIES CONNECTED TRAPATT DIODES.GLEASON KR; RUCKER CT; COX NW et al.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 8; PP. 804-806; BIBL. 5 REF.Article
LOW/HIGH-PROFILE TRAPATT STRUCTURE.GORONKIN H.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 19; PP. 400-402; BIBL. 6 REF.Article
A CIRCUIT FOR RAPID EVALUATION OF TRAPATT DIODES.JENKINS WC; GLEASON KR.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 11; PP. 976-977; BIBL. 1 REF.Article
REFLEXIONS SUR LES STRUCTURES HYPERFREQUENCES A PROFILS CONTROLES.MARIN BH.1975; ELECTR. ELECTRON. MOD.; FR.; DA. 1975; VOL. 45; NO 283; PP. 17-23 (6P.); BIBL. 16 REF.Article
A TRANSISTORIZED PULSE AIRRENT SOURCE FOR TRAPATT DIODES.HELLER M; KLAR H.1975; NACHR.-TECH. Z.; DTSCH.; DA. 1975; VOL. 28; NO 7; PP. 2444; ABS. ALLEM.; BIBL. 2 REF.Article
EXPERIMENTAL INVESTIGATION OF TRAPATT TRIGGERING CONDITIONS.EAST JR; MASNARI NA; HADDAD GI et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 419-427; BIBL. 6 REF.Conference Paper
THERMAL LIMITATIONS OF CW AND PULSED SILICON TRAPATT DIODESCHATURVEDI PK; KHOKLE WS.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 4; PP. 353-362; BIBL. 28 REF.Serial Issue