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Neues Leistungs- und Energiemessverfahren mit Hall-Generator = Nouvelles techniques de mesure de la puissance et de l'énergie à l'aide de dispositif à effet Hall = New techniques for measuring power and energy by using Hall-effect devicesVOSS, J; GEIS, K.ETZ-Archiv. 1988, Vol 10, Num 5, pp 165-167, issn 0170-1703Article

Transient analysis of compensated hall-effect current transducersPEJOVIC, P; STANKOVIC, D.International conference on microelectronic. 1997, pp 569-572, isbn 0-7803-3664-X, 2VolConference Paper

Horizontal Hall effect sensor with high maximum absolute sensitivityKAMMERER, Jean-Baptiste; HEBRARD, Luc; FRICK, Vincent et al.IEEE sensors journal. 2003, Vol 3, Num 6, pp 700-707, issn 1530-437X, 8 p.Conference Paper

Influence of the device-width on the accuracy of quantization in the integer quantum Hall effectJEANNERET, B; JECKELMANN, B; BÜHLMANN, H.-J et al.IEEE transactions on instrumentation and measurement. 1995, Vol 44, Num 2, pp 254-257, issn 0018-9456Conference Paper

Resistance scaling up to 1MΩ at PTB with a cryogenic current comparatorPESEL, E; SCHUMACHER, B; WARNECKE, P et al.IEEE transactions on instrumentation and measurement. 1995, Vol 44, Num 2, pp 273-275, issn 0018-9456Conference Paper

Système de contrôle électromagnétique des câbles d'acier utilisant des composants à effet Hall à sortie linéaire = Electromagnetic inspection system for steel ropes with linear output Hall effect devicesWACHE, G; BARBARIN, A.Revue pratique de contrôle industriel (1984). 1985, Vol 24, Num 132, pp 87-97, issn 0766-5210, 3 p.Article

Numerical modeling of vertical Hall-effect devicesHUISER, A. M. J; BALTES, H. P.IEEE electron device letters. 1984, Vol 5, Num 11, pp 482-484, issn 0741-3106Article

A search for asymmetry in the dissipation between the current entry and exit points in the quantum Hall regime of a silicon MOSFETOUALI, F. F; CHALLIS, L. J; COOPER, J et al.Semiconductor science and technology. 1992, Vol 7, Num 4, pp 608-611, issn 0268-1242Article

Intrinsic stress in narrow silicon metal-oxide-semiconductor field-effect transistors: magnetotransport measurementsPAQUIN, N; PEPPER, M; GUNDLACH, A et al.Applied physics letters. 1988, Vol 53, Num 3, pp 198-200, issn 0003-6951Article

High-performances Hall sensors based on III-V heterostructuresMOSSER, V; ABOULHOUDA, S; DENIS, J et al.Sensors and actuators. A, Physical. 1994, Vol 42, Num 1-3, pp 450-454, issn 0924-4247Conference Paper

Transducer measures power in single operationEDWARDS, M.Engineering materials and design (1972). 1990, Vol 10, Num 2, pp 50-51, issn 0308-6917, 2 p.Article

The performance of a new measuring method for three-dimensional ball motion in a ball-beasingARIYOSHI, S; KAWAKITA, K; HIRANO, F et al.Wear. 1983, Vol 92, Num 1, pp 13-23, issn 0043-1648Article

Precise m/e monitoring in a magnetically scanned mass spectrometer by using two Hall probesHALAS, S; SIKORA, J.Journal of physics. E. Scientific instruments. 1987, Vol 20, Num 6, pp 662-664, issn 0022-3735, part 1Article

Effects of contact geometry in wide Hall barsJOU, H; TSANG, W; KRIMAN, A. M et al.Applied surface science. 1996, Vol 92, Num 1-4, pp 585-588, issn 0169-4332Conference Paper

Rrflection of ballistic electrons by diffusive two-dimensional contactsGEIM, A. K; MAIN, P. C; TABORYSKI, R et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1005-1009, issn 0038-1101Conference Paper

Comparison of quantum Hall effect resistance standards of the BNM/LCIE and the BIPMDELAHAYE, F; WITT, T. J; PIQUEMAL, F et al.IEEE transactions on instrumentation and measurement. 1995, Vol 44, Num 2, pp 258-261, issn 0018-9456Conference Paper

AC measurements of the quantized Hall resistanceHARTLAND, A; KIBBLE, B. P; RODGERS, P. J et al.IEEE transactions on instrumentation and measurement. 1995, Vol 44, Num 2, pp 245-248, issn 0018-9456Conference Paper

Theory and experimental validation of a new analytical model for the position-dependent hall voltage in devices with arbitrary aspect ratioRUDAN, Massimo; REGGIANI, Susanna; GROOS, Gerhard et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 2, pp 314-322, issn 0018-9383, 9 p.Article

Symmetry properties of interacting two-dimensional electrons in a magnetic fieldMAKSYM, P. A.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 15, pp L433-L437, issn 0022-3719Article

Effect of a charged impurity on the fractional quantum Hall effect: exact numerical treatment of finite systemsZHANG, F. C; VULOVIC, V. Z; GUO, Y et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 10, pp 6920-6923, issn 0163-1829Article

Fast magnetic field mapping of permanent magnets with GMR bridge and Hall-probe sensorsCHRISTIDES, C; PANAGIOTOPOULOS, I; NIARCHOS, D et al.Sensors and actuators. A, Physical. 2003, Vol 106, Num 1-3, pp 243-245, issn 0924-4247, 3 p.Conference Paper

Quantum electrodynamic Hall effect in one time and two space dimensionsSRIVASTAVA, Y. N; WIDOM, A.Lettere al Nuovo Cimento della Societa Italiana di Fisica. 1984, Vol 39, Num 12, pp 285-288, issn 0375-930XArticle

Chiral anomaly and quantized Hall effectISHIKAWA, K.Physical review letters. 1984, Vol 53, Num 17, pp 1615-1618, issn 0031-9007Article

Critical current of the quantum hall regimeSTREDA, P.Physica status solidi. B. Basic research. 1984, Vol 124, Num 1, pp K97-K99, issn 0370-1972Article

Long-range order and the fractional quantum hall effectTHOULESS, D. J.Physical review. B, Condensed matter. 1985, Vol 31, Num 12, pp 8305-8307, issn 0163-1829Article

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