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Results 1 to 25 of 1658284

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Enhancement of Inelastic Electron Tunneling Conductance Caused by Electronic Decoupling in Iron Phthalocyanine Bilayer on Ag(111)OHTA, Naoka; ARAFUNE, Ryuichi; TSUKAHARA, Noriyuki et al.Journal of physical chemistry. C. 2013, Vol 117, Num 42, pp 21832-21837, issn 1932-7447, 6 p.Article

Line shapes in the current―voltage characteristics of single layer metal/organic semiconductor structures as response to the electric field at the charge injecting interfaceCVIKL, B.Thin solid films. 2013, Vol 542, pp 380-387, issn 0040-6090, 8 p.Article

Revealing the Relationship between Semiconductor Electronic Structure and Electron Transfer Dynamics at Metal Oxide-Chromophore InterfacesKNAUF, Robin R; BRENNAMAN, M. Kyle; ALIBABAEI, Leila et al.Journal of physical chemistry. C. 2013, Vol 117, Num 48, pp 25259-25268, issn 1932-7447, 10 p.Article

Enhancement of the hole mobility and concentration in pentacene by oxygen plasma treatmentLIN, Chi-Shin; LIN, Yow-Jon.Journal of non-crystalline solids. 2010, Vol 356, Num 50-51, pp 2820-2823, issn 0022-3093, 4 p.Article

Ab-initio vibrational properties of SiGe alloysTORRES, V. J. B; COUTINHO, J; BRIDDON, P. R et al.Thin solid films. 2008, Vol 517, Num 1, pp 395-397, issn 0040-6090, 3 p.Conference Paper

The electrical measurements in poly(2-chloroaniline) based thin film sandwich devicesÖDEMIR, Ahmet Faruk; GÖK, Aysegül; TÜRÜT, Abdülmecit et al.Thin solid films. 2007, Vol 515, Num 18, pp 7253-7258, issn 0040-6090, 6 p.Article

Ferroic metal-oxide films grown by polymer assisted depositionJAIN, M; LIN, Y; SHUKLA, P et al.Thin solid films. 2007, Vol 515, Num 16, pp 6411-6415, issn 0040-6090, 5 p.Conference Paper

First principles study of vacancies and Al substitutional impurities in δ-TiNCARARA, S. S; THESING, L. A; PIQUINI, P et al.Thin solid films. 2006, Vol 515, Num 4, pp 2730-2733, issn 0040-6090, 4 p.Article

Spectral and photocarrier dynamics in thin films of pristine and alkali-doped C60SRDANOV, V. I; LEE, C. H; SARICIFTCI, N. S et al.Thin solid films. 1995, Vol 257, Num 2, pp 233-243, issn 0040-6090Article

Electrical properties of bismuth selenide (Bi2Se3) thin films prepared by reactive evaporationJOHN, K. J; PRADEEP, B; MATHAI, E et al.Solid state communications. 1993, Vol 85, Num 10, pp 879-881, issn 0038-1098Article

Integration of low-temperature GaAs on Si substratesFRANKEL, M. Y; TADAYON, B; CARRUTHERS, T. F et al.Applied physics letters. 1993, Vol 62, Num 3, pp 255-257, issn 0003-6951Article

Large-area ZnO thin films for solar cells prepared by photo-induced metalorganic chemical vapor depositionYOSHINO, M; WENAS, W. W; YAMADA, A et al.Japanese journal of applied physics. 1993, Vol 32, Num 2, pp 726-730, issn 0021-4922, 1Article

Photoconductive SnO2 thin films from thermal decomposition of chemically deposited SnS thin filmsNAIR, P. K; NAIR, M. T. S; CAMPOS, J et al.Journal of the Electrochemical Society. 1993, Vol 140, Num 2, pp 539-541, issn 0013-4651Article

Thin and superthin photoconductive CdSe films deposited at room substrate temperatureNESHEVA, D; ARSOVA, D; IONOV, R et al.Journal of materials science. 1993, Vol 28, Num 8, pp 2183-2186, issn 0022-2461Article

Zero-field time-of-flight characterization of minority-carrier transport in heavily carbon-doped GaAsCOLOMB, C. M; STOCKMAN, S. A; GARDNER, N. F et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7471-7477, issn 0021-8979, 1Article

Efficient n-type doping of CdTe epitaxial layers grown by photo-assisted molecular beam epitaxy with the use of chlorineHOMMEL, D; SCHOLL, S; KUHN, T. A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 16, Num 1-3, pp 178-181, issn 0921-5107Conference Paper

Dependence of thermally stimulated current on the wavelenght of the excitation light found in tetracene filmsSALURAI, T.Physical review. B, Condensed matter. 1992, Vol 45, Num 12, pp 6623-6627, issn 0163-1829Article

Electrical and magneto-optical studies of MBE InAs on GaAsWANG, P. D; HOLMES, S. N; LE, T et al.Semiconductor science and technology. 1992, Vol 7, Num 6, pp 767-786, issn 0268-1242Article

A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidationZHANG, J. F; TAYLOR, S; ECCLESTON, W et al.Journal of applied physics. 1992, Vol 72, Num 4, pp 1429-1435, issn 0021-8979Article

Conversion of tin disulphide into silver sulphide by a simple chemical methodLOKHANDE, C. D; BHAD, V. V; DHUMURE, S. S et al.Journal of physics. D, Applied physics (Print). 1992, Vol 25, Num 2, pp 315-318, issn 0022-3727Article

Degradation and subsequent healing by electromigration in Al-1 wt % Si thin filmsLI, Z; BAUER, C. L; MAHAJAN, S et al.Journal of applied physics. 1992, Vol 72, Num 5, pp 1821-1832, issn 0021-8979Article

Dielectric properties of amorphous aluminium phosphate thin filmsDAVIERO, S; AVINENS, C; IBANEZ, A et al.Journal of non-crystalline solids. 1992, Vol 146, Num 2-3, pp 279-284, issn 0022-3093Article

Electrical and thermal properties of Ge40S60 filmsFADEL, M; NEGEM, A; METWALLY, H et al.Applied physics. A, Solids and surfaces. 1992, Vol 54, Num 3, pp 288-292, issn 0721-7250Article

High-conductivity state of thin polymer films : effects of an electric field and of a uniaxial pressureLACHINOV, A. N; ZHEREBOV, A. YU; KORNILOV, V. M et al.Soviet physics, JETP. 1992, Vol 75, Num 1, pp 99-102, issn 0038-5646Article

Photoconductivity of SnSe thin filmsBHATT, V. P; GIREESAN, K; DESAI, C. F et al.Journal of materials science letters. 1992, Vol 11, Num 7, pp 380-381, issn 0261-8028Article

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