SOME EFFECTS OF WAVE PROPAGATION IN THE GATE OF A MICROWAVE M.E.S.F.E.T.LADBROOKE PH.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 21-22; BIBL. 3 REF.Article

V-GROOVE POWER JUNCTION FIELD-EFFECT TRANSISTOR FOR V.H.F. APPLICATIONS.MOK TD; SALAMA CAT.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 22; PP. 582-583; BIBL. 4 REF.Article

LE TRANSISTOR STATIQUE A INDUCTION1978; ELECTRON. APPL. INDUSTR.; FRA; DA. 1978; NO 258; PP. 24-25Article

JFET-TRANSISTOR YIELDS DEVICE WITH NEGATIVE RESISTANCE.PORTER JA.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1098-1099; BIBL. 5 REF.Article

ACCURATE TWO-PORT MODEL FOR THE MOS TRANSISTOR IN THE PRE-PINCHOFF REGIONUMESH KUMAR.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 4; PP. 403-404; BIBL. 6 REF.Article

MECHANISM OF OPERATION OF FIELD-EFFECT DEVICESGUPTA RK.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1011-1014; BIBL. 14 REF.Article

GAAS FET'S.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; SUPPL. 1; PP. 143-157; BIBL. DISSEM.; (CONF. SOLID STATE DEVICES. 9. PROC.; TOKYO; 1977)Conference Paper

THICK FILM COMPATIBLE TRANSISTORS.AWATAR SINGH.1977; J. SCI. INDUSTR. RES.; INDIA; DA. 1977; VOL. 36; NO 3; PP. 118-120; BIBL. 7 REF.Article

A MICROWAVE GAAS INSULATED GATE FET.LILE DL; COLLINS DA; MESSICK L et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 4; PP. 247-248; BIBL. 14 REF.Article

GAAS IC1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 19-1; PP. 313-348; BIBL. DISSEM.Conference Paper

DETERMINATION OF THE FIELD EFFECT IN LOW-CONDUCTIVITY MATERIALS WITH THE CARGE-FLOW TRANSISTORSENTURIA SD; RUBINSTEIN J; AZOURY SJ et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3663-3670; BIBL. 12 REF.Article

ALTERNATE SUBSTRATES TO ALUMINA FOR MICROELECTRONICS. IICOLEMAN M.1983; ELECTRI.ONICS; ISSN 512907; USA; DA. 1983; VOL. 29; NO 1; PP. 19-21; BIBL. 8 REF.Article

S-PARAMETER MODEL OF DUAL-GATE GAAS MESFETASHOKA H; TUCKER RS.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 39-40; BIBL. 2 REF.Article

NEW METHOD FOR HIGH-ACCURACY DETERMINATION OF THE FINE-STRUCTURE CONSTANT BARED ON QUANTIZED HALL RESISTANCEKLITZING KV; DORDA G; PEPPER M et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 45; NO 6; PP. 494-497; BIBL. 13 REF.Article

ANALYSIS AND CHARACTERIZATION OF THE DEPLETION-MODE IGFETEL MANSY YA.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 331-340; BIBL. 11 REF.Article

CALCULATION OF THERMAL NOISE IN J.F.E.T.SSCHROEDER D; WEINHAUSEN G.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 137-141; BIBL. 11 REF.Article

SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHINGTAKAHASHI S; MURAI F; KODERA H et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1213-1218; BIBL. 9 REF.Article

DRAIN-VOLTAGE DEPENDENCE OF IGFET TURN-ON VOLTAGE.LUONG MO DANG.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 825-830; BIBL. 9 REF.Article

A SOLID-STATE VARIABLE RESISTOR USING A JUNCTION FET.SUGITA E; YASUDA Y; AKIYA M et al.1977; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1977; VOL. 25; NO 7-8; PP. 788-796; BIBL. 5 REF.Article

INVERSION-MODE INSULATED GATE GA_0.47 IN_0.53 AS FIELD-EFFECT TRANSISTORSWIEDER HH; CLAWSON AR; ELDER DI et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 3; PP. 73-74; BIBL. 9 REF.Article

ELECTRICAL PROPERTIES OF A TRIODE-LIKE SILICON VERTICAL-CHANNEL JFETOZAWA O.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2115-2123; BIBL. 19 REF.Article

STATIC NEGATIVE RESISTANCE IN CALCULATED MESFET DRAIN CHARACTERISTICSNORTON DE; HAYES RE.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 570-572; BIBL. 10 REF.Article

TWO-DIMENSIONAL ELECTRON GAS M.E.S.F.E.T. STRUCTUREDELAGEBEAUDEUF D; DELESCLUSE P; ETIENNE P et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 17; PP. 667-668; BIBL. 10 REF.Article

AN IN_{0 . 43}GA_{0 . 47} AS FUNCTION FIELD-EFFECT TRANSISTORLEHENY RF; NAHORY RE; POLLACK MA et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 6; PP. 110-111; BIBL. 10 REF.Article

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