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CURRENT SUPPRESSION INDUCED BY CONDUCTION-BAND DISCONTINUITY IN AL_0.35GA_0.65AS-GAASN-P HETEROJUNCTION DIODESWU CM; YANG ES.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2261-2263; BIBL. 13 REF.Article

ON THE ELECTRONIC CURRENT FLOWING WHEN AN N-TYPE A_IIIB_V SEMICONDUCTOR IS DISSOLVEDJANIETZ P; WEICHE R; WESTFAHL J et al.1980; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; ISSN 0022-0728; CHE; DA. 1980; VOL. 112; NO 1; PP. 63-70; BIBL. 13 REF.Article

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A novel non-contact capacitive probe for common-mode voltage measurementKOBAYASHI, Ryuichi; HIROSHIMA, Yoshiharu; ITO, Hidenori et al.IEICE transactions on communications. 2007, Vol 90, Num 6, pp 1329-1337, issn 0916-8516, 9 p.Conference Paper

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THE TIME DEPENDENCE OF THE FLATBAND VOLTAGE SHIFT OF MOS CAPACITORS CAUSED BY THE INJECTION OF MINORITY CARRIERS FROM SI INTO SIO₂JOSEPH B.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. K9-K11; BIBL. 10 REF.Article

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