kw.\*:(%22Fiabilit%C3%A9 dispositif semiconducteur%22)
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23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2012)MENEGHESSO, G; CIAPPA, M; COVA, P et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, issn 0026-2714, 777 p.Conference Proceedings
The ROCS Workshop and 25 years of compound semiconductor reliabilityROESCH, William J.Microelectronics and reliability. 2011, Vol 51, Num 2, pp 188-194, issn 0026-2714, 7 p.Conference Paper
Features of new laser micro-via organic substrate for semiconductor packageTSUKADA, Yutaka; YAMANAKA, Kimihior; KODAMA, Yasushi et al.Electrochimica acta. 2003, Vol 48, Num 20-22, pp 2997-3003, issn 0013-4686, 7 p.Conference Paper
21st European Symposium on the RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF 2010)BUSATTO, Giovanni; IANNUZZO, Francesco.Microelectronics and reliability. 2010, Vol 50, Num 9-11, issn 0026-2714, 732 p.Conference Proceedings
The challenge to record correct fast WLR monitoring data from productive wafers and to set reasonable limitsMARTIN, Andreas; FAZEKAS, Josef; PIETSCH, Andreas et al.IEEE international reliability physics symposium. 2004, pp 661-662, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper
Fast wafer level reliability: methods and experiencesVOLLERTSEN, Rolf-Peter.Microelectronics and reliability. 2004, Vol 44, Num 8, issn 0026-2714, 68 p.Serial Issue
2004 IEEE international reliability physics symposium proceedings, 42nd annual (Phoenix AZ, 25-29 April 2004)IEEE international reliability physics symposium. 2004, isbn 0-7803-8315-X, 1Vol, XII-748, isbn 0-7803-8315-XConference Proceedings
Analysis and optimum design of distributed feedback lasers using coupled-power theoryWANG, J.-Y; CADA, M.IEEE journal of quantum electronics. 2000, Vol 36, Num 1, pp 52-58, issn 0018-9197Article
An improved method and experimental results of noise used as reliability estimation for semiconductor lasersGUIJUN HU; JIAWEI SHI; YINGXUE SHIP et al.Optics and laser technology. 2003, Vol 35, Num 6, pp 481-483, issn 0030-3992, 3 p.Article
Solder with discontinuous melting point in semiconductor laser arrays and stacksCHENG, Dong-Ming; WANG, Li-Jun; YUN LIU et al.Optics and laser technology. 2003, Vol 35, Num 1, pp 61-63, issn 0030-3992, 3 p.Article
Proceedings of the Twelfth European Workshop on Materials for Advanced Metallization 2008SCHULTZ, Stefan E; KÖRNER, Heinrich; ZSCHECH, Ehrenfried et al.Microelectronic engineering. 2008, Vol 85, Num 10, issn 0167-9317, 258 p.Conference Proceedings
Service life of 1-W, 0.985-μm solitary heterolasersKOCHETKOV, A. A; KONYAEV, V. P.Quantum electronics (Woodbury). 2001, Vol 31, Num 5, pp 417-418, issn 1063-7818Article
Internalization of Coxsackievirus A9 Is Mediated by β2-Microglobulin, Dynamin, and Arf6 but Not by Caveolin-1 or ClathrinHEIKKILÄ, Outi; SUSI, Petri; TEVALUOTO, Tuire et al.Journal of virology. 2010, Vol 84, Num 7, pp 3666-3681, issn 0022-538X, 16 p.Article
A semiconductor device noise model : Integration of poisson type stochastic ohmic contact conditions with semiclassical transportNOAMAN, B. A; KORMAN, C. E.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 66000E.1-66000E.9, issn 0277-786X, isbn 978-0-8194-6737-9, 1VolConference Paper
Preliminary crystallographic analysis of coxsackievirus A9SMYTH, M; HALL, J; FRY, E et al.Journal of molecular biology. 1993, Vol 230, Num 2, pp 667-669, issn 0022-2836Article
Wearout estimation using the Robustness Validation methodology for components in 150°C ambient automotive applicationsLECUYER, P; FREMONT, H; LANDESMAN, J.-P et al.Microelectronics and reliability. 2010, Vol 50, Num 9-11, pp 1744-1749, issn 0026-2714, 6 p.Conference Paper
Reliability functions estimated from commonly used yield modelsKIM, Kyungmee O; OH, Hee-Seok.Microelectronics and reliability. 2008, Vol 48, Num 3, pp 481-489, issn 0026-2714, 9 p.Article
Laser diode reliability: crystal defects and degradation modes : Lasers semiconducteurs = Semiconductor lasersJIMENEZ, Juan.Comptes rendus. Physique. 2003, Vol 4, Num 6, pp 663-673, issn 1631-0705, 11 p.Article
High-power diode laser technology and applications II (San Jose CA, 26-27 January 2004)Zediker, Mark S.SPIE proceedings series. 2004, isbn 0-8194-5244-0, IX, 218 p, isbn 0-8194-5244-0Conference Proceedings
Developing an advanced PWM-switch model including semiconductor device non-linearitiesAMMOUS, A; AYEDI, M; OUNAJJAR, Y et al.EPJ. Applied physics (Print). 2003, Vol 21, Num 2, pp 107-120, issn 1286-0042, 14 p.Article
When adequate and predictable reliability is imperativeSUHIR, E.Microelectronics and reliability. 2012, Vol 52, Num 9-10, pp 2342-2346, issn 0026-2714, 5 p.Conference Paper
An ESD test reduction method for complex devices : Electrostatic Discharge ReliabilityMAKSIMOVIC, Dejan; BLANC, Fabrice; NOTERMANS, Guido et al.Microelectronics and reliability. 2009, Vol 49, Num 12, pp 1465-1469, issn 0026-2714, 5 p.Conference Paper
Monte Carlo calculation of velocity-field characteristics in II-VI compound semiconductorsDUTTA, A; MALLICK, P. S; MUKHOPADHYAY, D et al.International journal of electronics. 1998, Vol 84, Num 3, pp 203-214, issn 0020-7217Article
On the validity of quantum hydrodynamics for describing antidot array devicesBARKER, J. R; FERRY, D. K.Semiconductor science and technology. 1998, Vol 13, Num 8A, pp A135-A139, issn 0268-1242Conference Paper
Integrin αVβ6 is a high-affinity receptor for coxsackievirus A9HEIKKILÄ, Outi; SUSI, Petri; STANWAY, Glyn et al.Journal of general virology. 2009, Vol 90, pp 197-204, issn 0022-1317, 8 p., 1Article