GA_0.47IN_0.53AS/AL_0.48IN_0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

FORWARD BIAS VOLTAGE CHARACTERISTICS FOR (GAAL)AS AND (GAIN)(ASP) LASERSTHOMAS B; KAR A; HENSHALL GD et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 312-315; BIBL. 5 REF.Article

ION-IMPLANTED IN⁰,53)GA⁰,47)AS/IN⁰,48)AS LATERAL PNP TRANSISTORSTABATABAIE ALAVI K; CHOUDHURY ANMM; ALAVI K et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 379-381; BIBL. 12 REF.Article

IN⁰,53)GA⁰,47)AS CONTACT LAYER FOR 1,3 MU M LIGHT-EMITHING DIODESTEMKIN H; CHIN AK; DIGIUSEPPE MA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 19; PP. 703-705; BIBL. 8 REF.Article

CURRENT TRANSPORT IN AL/INALAS/INGAAS HETEROSTRUCTURESMORGAN DV; BOARD K; WOOD CEC et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. 251-260; ABS. GER; BIBL. 5 REF.Article

INGAAS/INGAASP AVALANCHE PHOTODIODES AND ANALYSIS OF INTERNAL QUANTUM EFFICIENCYTAKANASHI Y; HORIKOSHI Y.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 7; PP. 1271-1278; BIBL. 15 REF.Article

MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR BEAM EPITAXIAL GROWN IN_0.52AL_0.48AS/IN_0.53GA_0.47AS, N-N HETEROJUNCTION BY C-V PROFILINGPEOPLE R; WECHT KW; ALAVI K et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 1; PP. 118-120; BIBL. 10 REF.Article

SINGLE-MODE SEMICONDUCTOR INJECTION LASERS FOR OPTICAL FIBER COMMUNICATIONSNAKAMURA M; TSUJI S.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 994-1005; BIBL. 95 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3 MU M INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1108-1110; BIBL. 13 REF.Article

CW LASER ACTIVATED FLOW APPLIED TO THE PLANARIZATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURESDELFINO M; REIFSTECK TA.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 715-717; BIBL. 6 REF.Article

SUPPRESSING AL AUTODIFFUSION IN IMPLANTATION AMORPHIZED AND RECRYSTALLIZED SILICON ON SAPPHIRE FILMSREEDY RE; SIGMON TW; CHRISTEL LA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 707-709; BIBL. 7 REF.Article

TEMPERATURE DEPENDENCE OF THE LASING CHARACTERISTICS OF THE 1,3 MU M INGAASP-INP AND GAAS-AL0.36GA0.64AS DH LASERSDUTTA NK; NELSON RJ.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 5; PP. 871-878; BIBL. 51 REF.Article

DEPOSITION OF III-V COMPOUND SEMICONDUCTOR LAYERS FROM HALIDE SYSTEMSHEYEN M; BALK P.1981; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 8/1981/GOUVIEUX; USA; PENNINGTON NJ: THE ELECTROCHEMICAL SOCIETY; DA. 1981; PP. 291-306; BIBL. 22 REF.Conference Paper

"NONWAVEGUIDE-MODE SEMICONDUCTOR INJECTION LASERSBOGATOV AP; ELISEEV PG; MANKO MA et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 252-255; BIBL. 10 REF.Article

HETERO-CELLULE PHOTOELECTRIQUE IN₂O₃ - COMPOSES A^IIB^IVC₂^VABDURAKHIMOV AA; RUD YU V; SANIN KV et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 325-328; BIBL. 9 REF.Article

SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF I_TH AND ETA _EX IN 1.3 MU M IN GAASP DH LASERSNAMIZAKI H; HIRANO R; HIGUCHI H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 703-705; BIBL. 6 REF.Article

ANOMALOUS EFFECT OF CARRIERS ON DIELECTRIC CONSTANT OF (IN, GA) (AS, P) LASERS OPERATING AT 1.3 MU M WAVELENGTHTURLEY SEH.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 590-592; BIBL. 6 REF.Article

AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article

HIGH QUANTUM EFFICIENCY INGAASP/INP LASERSTAMARI N; ORON M; MILLER BI et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1025-1027; BIBL. 13 REF.Article

INTERNAL LASS OF INGAASP/INP BURIED CRESCENT (LAMBDA =1.3MU M) LASERHIGUCHI H; NAMIZAK; OOMURA E et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 320-321; BIBL. 10 REF.Article

INTEGRATED ARRAYS OF 1.3-MU M BURIED-CRESCENT LASERSTEMKIN H; LOGAN RA; VAN DER ZIEL JP et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 934-936; BIBL. 10 REF.Article

PLANAR INP/INGAAS-ADP WITH A GUARDRING FORMED BY CD DIFFUSION THROUGH SIO₂IKEDA M; WAKITA K; HATA S et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 61-62; BIBL. 7 REF.Article

PROTON AND DEUTERON BOMBARDED GA_0.47IN_0.53ASSTEEPLES K; DEARNALEY G; HARWELL AERE et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 703-705; BIBL. 7 REF.Article