GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

SINGLE-MODE SEMICONDUCTOR INJECTION LASERS FOR OPTICAL FIBER COMMUNICATIONSNAKAMURA M; TSUJI S.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 994-1005; BIBL. 95 REF.Article

FORWARD BIAS VOLTAGE CHARACTERISTICS FOR (GAAL)AS AND (GAIN)(ASP) LASERSTHOMAS B; KAR A; HENSHALL GD et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 312-315; BIBL. 5 REF.Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERSISHIKAWA H; YANO M; TAKUSAGAWA M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 553-555; BIBL. 22 REF.Article

NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

CURRENT DEPENDENCE OF TEMPERATURE RISE IN CW OPERATED GAINASP/INP DH LASER DIODESBROSSON P; THOMPSON GHB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 957-958; BIBL. 6 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3 MU M INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1108-1110; BIBL. 13 REF.Article

DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTUREYAMAKOSHI S; SANADA T; WADA O et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 144-146; BIBL. 16 REF.Article

DUAL WAVELENGTH INGAASP/INP TJS LASERSSAKAI S; AOKI T; UMENO M et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 18-20; BIBL. 6 REF.Article

GAINASP/INP DH LASER ON SEMI-INSULATING INP SUBSTRATE WITH TERRACE STRUCTUREMATSOKA T; SUZUKI Y; NOGUCHI Y et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 359-361; BIBL. 5 REF.Article

INGAASP/INP BURIED-HETEROSTRUCTURE LASERS (LAMBDA =1.5 MU M) WITH CHEMICALLY ETCHED MIRRORSADACHI S; KAWAGUCHI H; TAKAHEI K et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5843-5845; BIBL. 13 REF.Article

ANALYSIS OF ELECTRICAL, THRESHOLD, AND TEMPERATURE CHARACTERISTICS OF INGAASP/INP DOUBLE-HETEROJUNCTION LASERSYANO M; IMAI H; TAKUSAGAWA M et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 9; PP. 1954-1963; BIBL. 45 REF.Article

NEW WAVELENGTH DEMULTIPLEXING INGAASP/INP PHOTODIODESTOBE M; SAKAI S; UMENO M et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 2; PP. 213-216; BIBL. 8 REF.Conference Paper

VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

A NOVEL TECHNIQUE FOR GAINASP/INP BURIED HETEROSTRUCTURE LASER FABRICATIONLIAU ZL; WALPOLE JN.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 568-570; BIBL. 15 REF.Article

A STUDY OF FAR-FIELD PATTERNS FROM HIGH PERFORMANCE 1.3-MU M INGAASP-INP EDGE-EMITTING LED'SDEVOLDERE P; GILLERON M; CHARIL J et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 354-360; BIBL. 20 REF.Article

CHEMICALLY ETCHED-MIRROR GAINASP/IN LASERS. REVIEWIGA K; MILLER BI.1982; IEEE J. QUANTUM. ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 1; PP. 22-29; BIBL. 45 REF.Article

TIN DOPING OF ACTIVE REGION IN GAASP/INP LASERSTAMARI N.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 108-110; BIBL. 22 REF.Article

ACCELERATED FACET DEGRADATION OF INGAASP/INP DOUBLE-HETEROSTRUCTURE LASERS IN WATERMORIMOTO M; TAKUSAGAWA M.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4028-4037; BIBL. 39 REF.Article

LOW-THRESHOLD 1-3-MU M GAINASP/INP BURIED HETEROSTRUCTURE LASERS BY LIQUID PHASE EPITOXY AND METALORGANIC CHEMICAL VAPOR DEPOSITIONNG W; HONG CS; MANASEVIT H et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 188-189; BIBL. 10 REF.Article

TEMPERATURE DEPENDENCE OF OPTICAL GAIN SPECTRA IN GAINASP/INP DOUBLE-HETEROSTRUCTURE LASERSJUNG H; GOBEL E; ROMANEK KM et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 468-470; BIBL. 24 REF.Article

TRANSVERSE MODE CONTROLLED IN GA ASP/INP LASERS AT 1.5 MU M RANGE WITH BUFFER-LAYER LOADED PLANO-CONVEX WAVEGUIDE (BL-PCW) STRUCTURESSAKAI K; TANAKA F; NODA Y et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 7; PP. 1245-1250; BIBL. 27 REF.Article