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Results 1 to 25 of 228029

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THERMAL RESISTIVITY OF QUATERNARY SOLID SOLUTION GAXIN1-XASYP1-Y LATTICE-MATCHED TO INP AND GAASBOTH W; HERRMANN FP.1982; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 11; PP. K117-K122; BIBL. 14 REF.Article

THE USE OF METALORGANICS IN THE PREPARATION OF SEMICONDUCTOR MATERIALS. V. THE FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYSMANASEVIT HM; SIMPSON WI.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 135-137; BIBL. 14 REF.Serial Issue

TRANSITIONS INDIRECTES ENTRE BANDES DANS LES SOLUTIONS SOLIDES GA1-YINYP1-XASXSMIRNOVA GF.1982; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 9; PP. 1468-1470; BIBL. 7 REF.Article

LASING CHARACTERISTICS OF GAINASP/INP NARROW PLANAR STRIPE LASERSOE K; ANDO S; SUGIYAMA K et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3541-3544; BIBL. 11 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

DECAPAGE IONIQUE DES HETEROJONCTIONS INP-INGAASPZARGAR'YANTS MN; KRAPUKHIN VV; KRYKANOV IA et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 10; PP. 2102-2104; BIBL. 9 REF.Article

MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3 MU M INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1108-1110; BIBL. 13 REF.Article

BAND-TO-BAND AUGER RECOMBINATION IN INGAASP LASERSSUGIMURA A.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 21-23; BIBL. 30 REF.Article

COMPOUND SEMICONDUCTORS FOR LOW-NOISE MICROWAVE MESFET APPLICATIONSGOLIO JM; TREW RJ.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 7; PP. 1256-1262; BIBL. 23 REF.Article

GAINASP/INP STRIPE LASERS WITH ETCHED MIRRORS FABRICATED BY A WET CHEMICAL ETCHMILLER BI; IGA K.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 339-341; BIBL. 12 REF.Article

RELIABILITY OF HIGH RADIANCE INGAASP/INP LED'S OPERATING IN THE 1.2-1.3 MU M WAVELENGTHYAMAKOSHI S; ABE M; WADA O et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 167-173; BIBL. 25 REF.Article

ENERGY BANDGAP AND LATTICE CONSTANT CONTOURS OF III-V QUATERNARY ALLOYS.GLISSON TH; HAUSER JR; LITTLEJOHN MA et al.1978; J. ELECTRON. MATER.; U.S.A.; DA. 1978; VOL. 7; NO 1; PP. 1-16; BIBL. 1 P. 1/2Article

SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF ITH AND ETA EX IN 1.3 MU M IN GAASP DH LASERSNAMIZAKI H; HIRANO R; HIGUCHI H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 703-705; BIBL. 6 REF.Article

ANOMALOUS EFFECT OF CARRIERS ON DIELECTRIC CONSTANT OF (IN, GA) (AS, P) LASERS OPERATING AT 1.3 MU M WAVELENGTHTURLEY SEH.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 590-592; BIBL. 6 REF.Article

AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article

HIGH QUANTUM EFFICIENCY INGAASP/INP LASERSTAMARI N; ORON M; MILLER BI et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1025-1027; BIBL. 13 REF.Article

INTERNAL LASS OF INGAASP/INP BURIED CRESCENT (LAMBDA =1.3MU M) LASERHIGUCHI H; NAMIZAK; OOMURA E et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 320-321; BIBL. 10 REF.Article

FORWARD BIAS VOLTAGE CHARACTERISTICS FOR (GAAL)AS AND (GAIN)(ASP) LASERSTHOMAS B; KAR A; HENSHALL GD et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 312-315; BIBL. 5 REF.Article

INFLUENCE OF PRESSURE ON TEMPERATURE SENSITIVITY GAXIN1-XASYP1-Y LASERSADAMS AR; PATEL D; GREENE PD et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 21; PP. 919-920; BIBL. 5 REF.Article

INTERBAND AUGER RECOMBINATION IN INGAASPCHIU LC; CHEN PC; YARIV A et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 6; PP. 938-941; BIBL. 20 REF.Article

EVIDENCE FOR AUGER AND FREE-CARRIER LOSSES IN GAINASP/INP LASERS: SPECTROSCOPY OF A SHORT WAVELENGTH EMISSIONMOZAER A; ROMANEK KM; SCHMID W et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 964-966; BIBL. 37 REF.Article

A GROOVE GAINASP LASER ON SEMI-INSULATING INP USING A LATERALLY DIFFUSED JUNCTIONYU KL; KOREN U; CHEN TR et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 5; PP. 817-819; BIBL. 6 REF.Article

CHARACTERISTICS OF NARROW STRIPE GEOMETRY INGAASP/INP LASER DIODEOOMURA E; MUROTANI T; ISHII M et al.1981; TRANS. INST. ELECTRON. COMMUN. ENG. JPN., SECT. E; ISSN 0387-236X; JPN; DA. 1981; VOL. 64; NO 1; PP. 7-12; BIBL. 25 REF.Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

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