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INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

HYDROGENATION ACTIVITY OF METAL PHOSPHIDES AND PROMOTING EFFECT OF OXYGENNOZAKI F; TOKUMI M.1983; JOURNAL OF CATALYSIS; ISSN 0021-9517; USA; DA. 1983; VOL. 79; NO 1; PP. 207-210; BIBL. 3 REF.Article

Welche Kältemittel in der Zukunft? = Which refrigerant in the future?DOÊRING, R.Die Kälte und Klimatechnik. 1990, Vol 43, Num 9, pp 472-482, issn 0343-2246, 6 p.Article

CRYSTAL CHEMISTRY OF M₁₂P₇ PHASES IN RELATION WITH THE M₂P PHOSPHIDESMAAREF S; MADAR R; CHAUDOUET P et al.1981; J. SOLID STATE CHEM.; ISSN 0022-4596; GBR; DA. 1981; VOL. 40; NO 2; PP. 131-135; BIBL. 11 REF.Article

Th17 cytokines and mucosal immunityDUBIN, Patricia J; KOLLS, Jay K.Immunological reviews. 2008, Vol 226, pp 160-171, issn 0105-2896, 12 p.Article

IL-22, but Not IL-17, Dominant Environment in Cutaneous T-cell LymphomaMIYAGAKI, Tomomitsu; SUGAYA, Makoto; SUGA, Hiraku et al.Clinical cancer research (Print). 2011, Vol 17, Num 24, pp 7529-7538, issn 1078-0432, 10 p.Article

Installation avec évaporateur à air et condenseur à air = Refrigerating unit with an air evaporator and an air condenserJACQUARD, P.Revue pratique du froid et du conditionnement d'air. 1998, Num 862, pp 49-50, issn 0370-6699Article

Verwendung von KLEA 407A bei überfluteter Verdampfung = Using KLEA 407A with flooding evaporationLOW, B; TAYLOR, A.Die Kälte und Klimatechnik. 1996, Vol 49, Num 8, pp 528-531, issn 0343-2246, 3 p.Article

Austauschstoffe für R22: ein Überblick = Substitutes for R22: an overviewSCHWENNESEN, K.Die Kälte und Klimatechnik. 1994, Vol 47, Num 2, pp 59-62, issn 0343-2246, 3 p.Article

Do we understand the 22-year solar activity cycle ?PATERNO, L.Comptes rendus de l'Académie des sciences. Série IIb, mécanique, physique, astronomie. 1998, Vol 326, Num 6, pp 393-405, issn 1287-4620Article

Options techniques des constructeurs pour l'après-R 22 = Technical options for manufacturers about R 22 substituteMALEK, A; GOTH, Y.Revue pratique du froid et du conditionnement d'air. 1996, Num 833BIS, pp 49-53, issn 0370-6699Article

Le programme des R 407C et R 410B : Climatisation = R 407C and R 410B as substitutes of R 22 : Air conditioningDUBOIS, L; RINALDI, R.Revue pratique du froid et du conditionnement d'air. 1995, Num 818, pp 48-49, issn 0370-6699Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERSISHIKAWA H; YANO M; TAKUSAGAWA M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 553-555; BIBL. 22 REF.Article

NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

CURRENT DEPENDENCE OF TEMPERATURE RISE IN CW OPERATED GAINASP/INP DH LASER DIODESBROSSON P; THOMPSON GHB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 957-958; BIBL. 6 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

DARSTELLUNG, EIGENSCHAFTEN UND KRISTALLSTRUKTUR VON CU₂P₇ UND STRUKTURVERFEINERUNGEN VON CUP₂ UND AGP₂ = PREPARATION, PROPRIETES ET STRUCTURE CRISTALLINE DE CU₂P₇ ET AFFINEMENTS DE STRUCTURE DE CUP₂ ET AGP₂MOLLER MH; JEITSCHKO W.1982; ZEITSCHRIFT FUER ANORGANISCHE UND ALLGEMEINE CHEMIE; ISSN 0044-2313; DDR; DA. 1982; VOL. 491; NO 8; PP. 225-236; ABS. ENG; BIBL. 35 REF.Article

A NOVEL TECHNIQUE FOR GAINASP/INP BURIED HETEROSTRUCTURE LASER FABRICATIONLIAU ZL; WALPOLE JN.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 568-570; BIBL. 15 REF.Article

HYPERSURFACE OF EINSTEIN MANIFOLDSKOISO N.1981; ANN. SCI. EC. NORM. SUPER.; ISSN 0012-9593; FRA; DA. 1981; VOL. 14; NO 4; PP. 433-443; BIBL. 11 REF.Article

DIRECT MODULATION OF INGA ASP/INP DOUBLE HETEROSTRUCTURE LASERS.AKIBA S; SAKAI K; YAMAMOTO T et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 6; PP. 197-198; BIBL. 9 REF.Article

SPATIALLY RESOLVED PHOTOLUMINESCENCE CHARACTERIZATION AND OPTICALLY INDUCED DEGRADATION OF IN_1-XGA_XAS_YP_1-Y DH LASER MATERIALJOHNSTON WD JR; EPPS GY; NAHORY RE et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 12; PP. 992-994; BIBL. 9 REF.Article