Formation of semiconductor interfaces by surfaces electromigrationYASUNAGA, H; NATORI, A; WU, N.-J et al.Applied surface science. 1992, Vol 56-58, pp 330-334, issn 0169-4332, aConference Paper

Nucleation and growth of gallium arsenide on siliconBARTENLIAN, B; BISARO, R; OLIVIER, J et al.Applied surface science. 1992, Vol 56-58, pp 589-596, issn 0169-4332, bConference Paper

Studies on the structure of the SiO_x/SiO₂ interfacePAPARAZZO, E; FANFONI, M; SEVERINI, E et al.Applied surface science. 1992, Vol 56-58, pp 866-872, issn 0169-4332, bConference Paper

Photoemission from AlGaAs/GaAs superlatticesGENTNER, H; HERMANN, C; LAMPEL, G et al.Applied surface science. 1992, Vol 56-58, pp 632-636, issn 0169-4332, bConference Paper

Characterization of cobalt-diamond (100) interfaces : electron affinity and Schottky barrierBAUMANN, P. K; NEMANICH, R. J.Applied surface science. 1996, Vol 104-05, pp 267-273, issn 0169-4332Conference Paper

Characterization of arsenide/phosphide heterostructure interfaces by scanning tunneling microscopyLEW, A. Y; YAN, C. H; TU, C. W et al.Applied surface science. 1996, Vol 104-05, pp 522-528, issn 0169-4332Conference Paper

Structural transformations at CaF2/Si(111) interfacesSOKOLOV, N. S; ALVAREZ, J. C; SHUSTERMAN, YU. V et al.Applied surface science. 1996, Vol 104-05, pp 402-408, issn 0169-4332Conference Paper

In-situ monitoring of surface chemistry and charge transfer at semiconductor surfacesFEFER, E; KRONIK, L; LEIBOVITCH, M et al.Applied surface science. 1996, Vol 104-05, pp 61-67, issn 0169-4332Conference Paper

AFM and RHEED study of Ge islanding on Si(111) and Si(100)DEELMAN, P. W; THUNDAT, T; SCHOWALTER, L. J et al.Applied surface science. 1996, Vol 104-05, pp 510-515, issn 0169-4332Conference Paper

Ab initio calculations of the reconstructed (100) surfaces of cubic silicon carbideKÄCKELL, P; FURTHMÜLLER, J; BECHSTEDT, F et al.Applied surface science. 1996, Vol 104-05, pp 45-48, issn 0169-4332Conference Paper

An ARUPS/NEXAFS study of the H₂S /InP(110) adsorbate systemDUDZIK, E; LESLIE, A; O'TOOLE, E et al.Applied surface science. 1996, Vol 104-05, pp 101-106, issn 0169-4332Conference Paper

Initial stage of oxidation of hydrogen-terminated silicon surfacesHATTORI, T; AIBA, T; IIJIMA, E et al.Applied surface science. 1996, Vol 104-05, pp 323-328, issn 0169-4332Conference Paper

Interface properties of PN_x/InP structures by in-situ remote plasma processesSUGINO, T; SAKAMOTO, Y; MIYAZAKI, T et al.Applied surface science. 1996, Vol 104-05, pp 428-433, issn 0169-4332Conference Paper

Plasma assisted oxidation of SiGe layers at 500°C : interface characterizationTETELIN, C; WALLART, X; VESCAN, L et al.Applied surface science. 1996, Vol 104-05, pp 385-391, issn 0169-4332Conference Paper

Segregation of In atoms at clean and hydrogen passivated InP(100) surfacesSTIETZ, F; ALLINGER, T; POLYAKOV, V et al.Applied surface science. 1996, Vol 104-05, pp 169-175, issn 0169-4332Conference Paper

Analytical studies of nickel silicide formation through a thin Ti layerFENSKE, F; SCHÖPKE, A; SCHULZE, S et al.Applied surface science. 1996, Vol 104-05, pp 218-222, issn 0169-4332Conference Paper

Clustering on surfaces at finite areal coveragesBAREL, R; MAI, Y; CARLOW, G. R et al.Applied surface science. 1996, Vol 104-05, pp 669-678, issn 0169-4332Conference Paper

Porous silicon layers as a model system for nanostructuresROSSOW, U; FROTSCHER, U; PIETRYGA, C et al.Applied surface science. 1996, Vol 104-05, pp 552-556, issn 0169-4332Conference Paper

Surface core-level shift photoelectron diffraction from As/Si(111)JOHANSSON, L. S. O; GUNNELLA, R; BULLOCK, E. L et al.Applied surface science. 1996, Vol 104-05, pp 88-94, issn 0169-4332Conference Paper

A summary and perspective on the fifth international conference on the formation of semiconductor interfaces, princeton, NJLÜTH, H.Applied surface science. 1996, Vol 104-05, pp 685-689, issn 0169-4332Conference Paper

Atomic phenomena on Si surfaces at adsorption of transition metalsOLSHANETSKY, B. Z.Applied surface science. 1996, Vol 104-05, pp 130-136, issn 0169-4332Conference Paper

GaAs surface passivation using in-situ oxide depositionPASSLACK, M; HONG, M; OPILA, R. L et al.Applied surface science. 1996, Vol 104-05, pp 441-447, issn 0169-4332Conference Paper

Interface abruptness in strained III-V heterostructuresBRUNI, M. R; KACIULIS, S; MATTOGNO, G et al.Applied surface science. 1996, Vol 104-05, pp 652-655, issn 0169-4332Conference Paper

Midgap states observed by nonlinear optical spectroscopy of metal : GaAs junctionsQI, J; ANGERER, W; YEGANEH, M. S et al.Applied surface science. 1996, Vol 104-05, pp 188-195, issn 0169-4332Conference Paper

Se-induced 3d core-level shifts of GaAs(110)KÄCKELL, P; SCHMIDT, W. G; BECHSTEDT, F et al.Applied surface science. 1996, Vol 104-05, pp 141-146, issn 0169-4332Conference Paper