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Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETsWOOKYUNG SUN; HYUNGSOON SHIN.Solid-state electronics. 2014, Vol 94, pp 23-27, issn 0038-1101, 5 p.Article

Anomalous drain-induced barrier lowering effect of thin-film transistors due to capacitive coupling voltage of light-shield metalMIRYEON KIM; HYUNGSOON SHIN.Electronics letters. 2014, Vol 50, Num 15, pp 1093-1095, issn 0013-5194, 3 p.Article

For the recuperation of the process of change for the people and with the people : Reform and revolution in South America: a forum on Bolivia and Venezuela = Pour la récupération du processus de changement, pour les gens et avec les gens : La réforme et la révolution en Amérique du Sud : un forum sur la Bolivie et le VenezuelaDialectical anthropology. 2011, Vol 35, Num 3, pp 285-293, issn 0304-4092, 9 p.Article

Outils pour l'apprentissage, Colloque, Orsay, 17-18 janvier 1983 = Tools for learningStructures de l'information. Publications. 1983, Num 32, 177 p.Serial Issue

A Full Adder Design Using Serially Connected Single-Layer Magnetic Tunnel Junction ElementsLEE, Seungyeon; SEO, Sunae; LEE, Seungjun et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 890-895, issn 0018-9383, 6 p.Article

Magneto-logic device based on a single-layer magnetic tunnel junctionLEE, Seungyeon; CHOA, Sunghoon; LEE, Seungjun et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 8, pp 2040-2044, issn 0018-9383, 5 p.Article

A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET'sAGOSTINELLI, V. M; HYUNGSOON SHIN; TASCH, A. F et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 1, pp 151-159, issn 0018-9383, 9 p.Article

Unified Analytical Model for Switching Behavior of Magnetic Tunnel JunctionHYEIN LIM; SEUNGJUN LEE; HYUNGSOON SHIN et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 193-195, issn 0741-3106, 3 p.Article

DNA sequence and comparative analysis of chimpanzee chromosome 22Nature (London). 2004, Vol 429, Num 6990, pp 382-388, issn 0028-0836, 7 p.Article

A transmission disequilibrium and linkage analysis of D22S278 marker alleles in 574 families : Further support for a susceptibility locus for schizophrenia at 22q12Schizophrenia research. 1998, Vol 32, Num 2, pp 115-121, issn 0920-9964Article

A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elementsLEE, Seungyeon; LEE, Hyunjoo; KIM, Sojeong et al.Solid-state electronics. 2010, Vol 54, Num 4, pp 497-503, issn 0038-1101, 7 p.Article

Plasmonic Nanoholes in a Multichannel Microarray Format for Parallel Kinetic Assays and Differential SensingIM, Hyungsoon; LESUFFLEUR, Antoine; LINDQUIST, Nathan C et al.Analytical chemistry (Washington). 2009, Vol 81, Num 8, pp 2854-2859, issn 0003-2700, 6 p.Article

Current-crowding effect in diagonal MOSFET'sHYUNSANG HWANG; HYUNGSOON SHIN; DAE-GWAN KANG et al.IEEE electron device letters. 1993, Vol 14, Num 6, pp 289-291, issn 0741-3106Article

A combined analysis of D22S278 marker alleles in affected sib-pairs : Support for a susceptibility locus for schizophrenia at chromosome 22q12American journal of medical genetics. 1996, Vol 67, Num 1, pp 40-45, issn 0148-7299Article

Nanohole-Based Surface Plasmon Resonance Instruments with Improved Spectral Resolution Quantify a Broad Range of Antibody-Ligand Binding KineticsIM, Hyungsoon; SUTHERLAND, Jamie N; MAYNARD, Jennifer A et al.Analytical chemistry (Washington). 2012, Vol 84, Num 4, pp 1941-1947, issn 0003-2700, 7 p.Article

Anomalous hot carrier degradation of nMOSFET's at elevated temperaturesHYUNSANG HWANG; JUNG-SUK GOO; HOYUP KWON et al.IEEE electron device letters. 1995, Vol 16, Num 4, pp 148-150, issn 0741-3106Article

Dix ans de quotas laitiers dans les Côtes-d'ArmorTrajectoires Bretagne. 1993, Num 8, pp 5-8, issn 1167-4563Article

A new weight redistribution technique for electron-electron scattering in the MC simulationKIM, Jongchol; SHIN, Hyungsoon; LEE, Chanho et al.I.E.E.E. transactions on electron devices. 2004, Vol 51, Num 9, pp 1448-1454, issn 0018-9383, 7 p.Article

Vertically Oriented Sub-10-nm Plasmonic Nanogap ArraysIM, Hyungsoon; BANTZ, Kyle C; LINDQUIST, Nathan C et al.Nano letters (Print). 2010, Vol 10, Num 6, pp 2231-2236, issn 1530-6984, 6 p.Article

Rendre l'Europe plus accessible aux touristes handicapés : guide à l'usage de l'industrie touristique1997, 123 p., isbn 9-282-77301-9Book

MOSFET drain engineering analysis for deep-submicrometer dimensions : a new structural approachHYUNGSOON SHIN; TASCH, A. F; BORDELON, T. J et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 8, pp 1922-1927, issn 0018-9383Article

A new approach to verify and derive a transverse-field dependent mobility model for electrons in MOS inversion layersHYUNGSOON SHIN; TASCH, A. F; MAZIAR, C. M et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, pp 1117-1124, issn 0018-9383, 8 p.Article

An analytical model for hot-carrier-induced degradation of deep-submicron n-channel LDD MOSFETsJUNG-SUK GOO; YOUNG-GWAN KIM; HYEOKJAE L'YEE et al.Solid-state electronics. 1995, Vol 38, Num 6, pp 1191-1196, issn 0038-1101Article

TOXIC MATERIALS IN THE ATMOSPHERE: SAMPLING AND ANALYSIS. SYMPOSIUM, BOULDER, COLO., 2-5 AUG. 1981HIMMELSBACH BF ED.1982; ASTM SPECIAL TECHNICAL PUBLICATION; ISSN 0066-0558; USA; DA. 1982; NO 786; 166 P.; BIBL. DISSEM.Conference Paper

Conférences/Journées d'études T.D.F.-S.E.E. sur la production en télévision, Rennes, juin 1986 = TDF-SEE symposium. Video production, Rennes, June 1986TRICHOT, C.Radiodiffusion télévision. 1986, Vol 20, Num 93, pp 1-30, issn 0151-6302Conference Proceedings

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