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ELECTROLUMINESCENCE IN ZNSIP₂ SCHOTTKY DIODES.SIEGEL W; BECHERER H; KIHNEL G et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 75-80; ABS. ALLEM.; BIBL. 17 REF.Article

BASES PHYSIQUES DE LA FIABILITE DES DIODES UHF A BARRIERE DE SCHOTTKY (ARTICLE DE SYNTHESE)RADZIEVSKIJ IA.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 89-93; BIBL. 1 P. 1/2Article

DOUBLE VELOCITY IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 817-819; BIBL. 9 REF.Article

PROPRIETES FONDAMENTALES DE LA COUCHE ENRICHIE DANS UNE DIODE GUNND'YAKONOV MI; LEVINSHTEJN ME; SIMIN GS et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2116-2126; BIBL. 17 REF.Article

SEMICONDUCTOR DIODES FOR RF APPLICATIONS.HOWARD NR.1977; ELECTRON. ENGNG; G.B.; DA. 1977; VOL. 49; NO 598; PP. 68-69Article

A NEW IMPEDANCE-TRANSFORMATION PROPERTY AND ITS APPLICATIONS TO SWITCHING-DIODE Q-FACTOR MEASUREMENTS.MORAWSKI T.1977; INTERNATION. J. CIRCUIT THEORY APPL.; G.B.; DA. 1977; VOL. 5; NO 2; PP. 135-138; BIBL. 8 REF.Article

TRANSIENT ANALYSIS OF THE TRAPATT MODE IN AVALANCHE DIODESKHOCHNEVIS RAD M; LOMAX RJ; HADDAD GI et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1245-1252; BIBL. 11 REF.Article

A 60-W CW SOLID-STATE OSCILLATOR AT C BAND.WALLACE RN; ADLERSTEIN MG; STEELE SR et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 7; PP. 483-485; BIBL. 7 REF.Article

METHODE REFRACTOMETRIQUE DE MESURE DES PARAMETRES DES DIODES LUMINESCENTES PLANARSKHOMENKO VE; LIPOVSKIJ AA; ALEKSANDROV NA et al.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 3; PP. 224-225; BIBL. 8 REF.Article

RAMP RECOVERY IN P-I-N DIODESBERZ F.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 783-792; BIBL. 9 REF.Article

NUMERISCHE ANALYSE ELEKTRONISCHER HALBLEITERSTRUKTUREN = ANALYSE NUMERIQUE DES STRUCTURES ELECTRONIQUES DES SEMI-CONDUCTEURSRITZ S; GOETZE R; SCHUFFNY R et al.1978; NACHR.-TECH., ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 12; PP. 501-504; BIBL. 17 REF.Article

P-I-N DIODES FOR LOW-FREQUENCY HIGH-POWER SWITCHING APPLICATIONSCAULTON M; ROSEN A; STABILE PJ et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 6; PP. 875-882; BIBL. 9 REF.Article

SELF-CONSISTENT SOLUTIONS FOR IMPATT DIODE NETWORKSBRAZIL TJ; SCANLAN SO.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 1; PP. 26-32; BIBL. 16 REF.Article

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DESIGN AND PERFORMANCES OF MAXIMUM-EFFICIENCY SINGLE-AND DOUBLE-DRIFT-REGION GAAS IMPATT DIODES IN THE 3-18-GHZ FREQUENCY RANGEPRIBETICH J; CHIVE M; CONSTANT E et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 11; PP. 5584-5594; BIBL. 26 REF.Article

EFFECTS OF DEPLETION-LAYER MODULATION ON SPURIOUS OSCILLATIONS IN IMPATT DIODES.TANG P; HADDAD GI.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 9; PP. 734-741; BIBL. 5 REF.Article

DRIFTZEITKONSTANTEN ZUR BESCHREIBUNG DES UMSCHALTVERHALTENS VON SPEICHERVARAKTOREN. = CONSTANTES DE TEMPS DE DERIVE POUR DECRIRE LE COMPORTEMENT DE COMMUTATION DES VARACTORS A STOCKAGE DE CHARGEGERRATH KH.1977; NACHR.-TECH. Z.; DTSCH.; DA. 1977; VOL. 30; NO 10; PP. 783-786; ABS. ANGL.; BIBL. 8 REF.Article

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IMPROVEMENT OF BREAKDOWN CHARACTERISTICS OF A PLANAR MICROWAVE P-I-N DIODE BY THE BEVELLING TECHNIQUEVAYA PR; KAKATI D.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 1; PP. K67-K69; BIBL. 7 REF.Article

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THERMAL DESIGN OF MICROWAVE PIN DIODESCHATURVEDI PK; RAMAMURTHI V; KAKATI D et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 129-134; BIBL. 14 REF.Article

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NUMERICAL ANALYSIS OF NONLINEAR SOLID-STATE DEVICE EXCITATION IN MICROWAVE CIRCUITSHICKS RG; KHAN PJ.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 2; PP. 251-259; BIBL. 16 REF.Article