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STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article

THE ELECTROCHEMICAL CHARACTERIZATION OF N-TYPE GALLIUM ARSENIDEAMBRIDGE T; ELLIOTT CR; FAKTOR MM et al.1973; J. APPL. ELECTROCHEM.; G.B.; DA. 1973; VOL. 3; NO 1; PP. 1-15; BIBL. 16 REF.Serial Issue

MEASUREMENT OF THE MOBILITY AND CONCENTRATION OF CARRIERS IN DIFFUSED ZONES IN SI WITH A GATE CONTROLLED STRUCTURE.DARWISH MY.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 397-402; BIBL. 16 REF.Article

THE INFLUENCES OF TRAPS ON THE GENERATION-RECOMBINATION CURRENT IN SILICON DIODESLEE K; NUSSBAUM A.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 655-660; BIBL. 12 REF.Article

EFFECT OF CHARGED-CENTRE SCATTERING ON THE MOBILITY OF PHOTO-EXCITED CARRIERS IN DEFECT PHOTOCONDUCTORSSIMMONS JG; TAYLOR GW.1973; PHILOS. MAG.; G.B.; DA. 1973; VOL. 27; NO 1; PP. 121-126; BIBL. 10 REF.Serial Issue

INFLUENCE OF DEFORMATION ON THE MOBILITY AND LIFETIMES OF CHARGE-CARRIERS IN ANTHRACENE CRYSTALSARIS FC; LEWIS TJ; THOMAS JM et al.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 9; PP. 913-917; ABS. FR.; BIBL. 15 REF.Serial Issue

DIE ABHAENGIGKEIT DER TRAEGERBEWEGLICHKEIT IN SILIZIUM VON DER KONZENTRATION DER FREIEN LADUNGSTRAEGER. I = LA VARIATION, EN FONCTION DE LA DENSITE DES PORTEURS DE CHARGE LIBRE, DE LA MOBILITE DES PORTEURS DANS LE SILICIUMDANNHAUSER F.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1371-1375; ABS. ANGL.; BIBL. 21 REF.Serial Issue

A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORSMING FU LI; CHIH TANG SAH.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 306-315; BIBL. 21 REF.Article

EFFECT OF ELECTRON-ELECTRONSCATTERING ON MOBILITY IN GAASCHATTOPADHYAY D.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3330-3332; BIBL. 13 REF.Article

VELOCITY AUTO-CORRELATION AND HOT-ELECTRON DIFFUSION CONSTANT IN GAAS AND INPDEBROY M; NAG BR.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 28; NO 3; PP. 195-204; BIBL. 28 REF.Article

THEORY OF MULTIPLE TRAPPING.SCHMIDLIN FW.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 7; PP. 451-453; BIBL. 12 REF.Article

MONTE-CARLO CALCULATION OF ELECTRON TRANSPORT IN POLAR SEMICONDUCTORS.AAS EJ; BLOTEKAER K.1974; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1974; VOL. 35; NO 9; PP. 1053-1059; BIBL. 13 REF.Article

THE MOBILITY OF FREE CARRIERS IN PBSE CRYSTALSSCHLICHTING U; GOBRECHT KH.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 4; PP. 753-758; BIBL. 11 REF.Serial Issue

OUTDIFFUSION OF RECOMBINATION CENTERS FROM THE SUBSTRATE INTO LPE LAYERS: GAASJASTRZEBSKI L; LAGOWSKI J; GATOS HC et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 12; PP. 2231-2234; BIBL. 26 REF.Article

MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299 AND 105 KDAS MB; KIM B.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 205-211; BIBL. 12 REF.Article

NOUVEAUX MODES DES ONDES DE RECOMBINAISON DANS DES SEMICONDUCTEURS A PLUSIEURS NIVEAUX PIEGESSABLIKOV VA.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 7; PP. 1340-1347; BIBL. 4 REF.Article

DISCONTINUITIES IN DRIFT SOLUTIONS DUE TO REVERSAL IN AMBIPOLAR DRIFT. INJECTION ANS ACCUMULATION OF HOT CARRIERS.DMITRIEV AP; STEFANOVICH AF; TSENDIN LD et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 1; PP. 45-53; ABS. RUSSE; BIBL. 12 REF.Article

DYNAMIQUE DE CAPTURE ET DE RECOMBINAISON DES PORTEURS DANS LE PROCESSUS DE DECHARGE D'UN PHOTORECEPTEUR A SEMICONDUCTEURARKHIPOV VI; RUDENKO AI.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 8; PP. 1527-1531; BIBL. 2 REF.Article

MINORITY CARRIER INJECTION AND STORAGE INTO A HEAVILY DOPED EMITTER: APPROXIMATE SOLUTION FOR AUGER RECOMBINATIONDUMKE WP.1981; SOLID. STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 155-157; BIBL. 10 REF.Article

MINORITY-CARRIER DIFFUSION COEFFICIENTS IN HIGHLY DOPED SILICONDZIEWIOR J; SILBER D.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 170-172; BIBL. 13 REF.Article

EINFLUSS HEISSER LADUNGSTRAEGER AUF DIE DONATOR-AKZEPTOR-PAAR-REKOMBINATION. = INFLUENCE DES PORTEURS CHAUDS SUR LA RECOMBINAISON DE PAIRE DONNEUR-ACCEPTEURHANSEL T; ZEHE A; SCHWABE R et al.1976; KRISTALL U. TECH.; DTSCH.; DA. 1976; VOL. 11; NO 6; PP. 653-658; ABS. ANGL.; BIBL. 10 REF.Article

PHOTOCONDUCTIVITE DES DIODES LONGUES LORS DE L'ABSORPTION DE LA LUMIERE PAR LES PORTEURS INJECTES ET LEUR RECHAUFFEMENT PAR UN CHAMP ELECTRIQUEBLOKHIN IK; OSIPOV VV; SMAFEEV VI et al.1981; RADIOTEKH. I ELEKTRON.; SUN; DA. 1981; VOL. 26; NO 7; PP. 1574-1580; BIBL. 18 REF.Article

IONIZATION OF LOW DONOR LEVELS AND RECOMBINATION OF HOT ELECTRONS IN N-SI AT LOW TEMPERATURESASCHE M; KOSTIAL H; SARBEY OG et al.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 2; PP. 521-530; ABS. RUS; BIBL. 26 REF.Article

ETUDE DU RETARD DE PHASE ET DETERMINATION DE LA DUREE DE VIE DES PORTEURS MINORITAIRES A L'INTERIEUR DU GERMANIUM ET DU SILICIUM POUR UNE INJECTION SINUSOIDALE.GAY HC.1976; C.R. ACAD. SCI., B; FR.; DA. 1976; VOL. 282; NO 24; PP. 551-553; ABS. ANGL.; BIBL. 2 REF.Article

TFT CHARACTERISTICS WITH DISTRIBUTED TRAPS IN THE SEMICONDUCTOR. = CARACTERISTIQUES DE TRANSISTORS A COUCHES MINCES AVEC DES PIEGES REPARTIS DANS LE SEMICONDUCTEURDEMASSA TA; REFIOGLU HI.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 4; PP. 315-319; BIBL. 13 REF.Article

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