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ON THE LOCATION OF THE INTERFACE FERMI LEVEL IN METAL-SEMICONDUCTOR SCHOTTKY-BARRIER CONTACTSCHOT T.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. 551-558; ABS. GER; BIBL. 46 REF.Article

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SCHROEDINGER EQUATION FOR A DIRAC BUBBLE POTENTIALBLINDER SM.1979; CHEM. PHYS. LETTERS; NLD; DA. 1979; VOL. 64; NO 3; PP. 485-486; BIBL. 3 REF.Article

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DIFFERENTIAL CAPACITANCE OF IN-SRTIO_3-X CONTACTS - INFLUENCE OF THE ELECTRIC-FIELD-DEPENDENT PERMITTIVITYHAYASHI S; AOKI R.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 2; PP. 331-335; BIBL. 11 REF.Article

ISOTHERMAL AND NON-ISOTHERMAL C-V TRAP MEASUREMENTS: A CRITICAL COMPARISONLAU F; POTH H; BALK P et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 703-713; BIBL. 18 REF.Article

FUNDAMENTAL STUDIES OF III-V SURFACES AND THE (III-V)-OXIDE INTERFACESPICER WE; LINDAU I; PIANETTA P et al.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 1-18; BIBL. 39 REF.Article

GENERALIZATION OF THERMOIONIC EMISSION THEORY. TEMPERATURE DEPENDENCE OF GAAS INTERVALLEY GAP FROM MEASUREMENTS ON SCHOTTKY DIODESSALARDI G; PELLEGRINI B; DI LEO T et al.1979; SOLID STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 4; PP. 435-441; BIBL. 21 REF.Article

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SCHOTTKY BARRIERS: AN EFFECTIVE WORK FUNCTION MODELFREEOUF JL; WOODALL JL.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 9; PP. 727-729; BIBL. 14 REF.Article

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Point-contact properties of non-Fermi liquid compound YbCu_3.5Al_1.5REIFFERS, Marian; ILKOVIC, Sergej; ZORKOVSKA, Anna et al.Journal of magnetism and magnetic materials. 2004, Vol 272-76, pp 625-626, issn 0304-8853, 2 p., 1Conference Paper

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Bonding and electronic structure of the GaAs(110)-Al interfaceCIRACI, S; BATRA, I. P.Solid state communications. 1984, Vol 51, Num 1, pp 43-46, issn 0038-1098Article

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