GROWTH OF ALGAAS-GAAS HETEROSTRUCTURES FROM STEP-COOLED SOLUTIONS.RODE DL; SOBERS RG.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 1; PP. 61-64; BIBL. 19 REF.Article

DISPOSITIF POUR LA CROISSANCE DE STRUCTURES EPITAXIALES MULTICOUCHE D'ARSENIURE DE GALLIUM A PARTIR DE LA PHASE LIQUIDEBARYBIN AA; ZAKHROV AA; NEDEV NK et al.1974; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1974; NO 5; PP. 217-219; BIBL. 7 REF.Article

CINETIQUE DE LA DECOMPOSITION THERMIQUE DE GAP ET GAAS GAAS SOUS COUCHE DU FLUXSHURYGIN PM; MARBAKH AL; DENISOV VM et al.1972; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1972; VOL. 204; NO 6; PP. 1419-1421; BIBL. 4 REF.Serial Issue

P-GAAS/P-GA_1-XAL_XAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

ZUM WACHSTUM VON A^IIIB^V-HALBLEITERN AUS NICHTSTOECHIOMETRISCHEN SCHMELZEN (II). DOTIERUNG VON GAAS UND GA_1-XAL_XAS MIT ZINK = CROISSANCE DE SEMICONDUCTEURS A^IIIB^V A PARTIR DE PRODUITS DE FUSION NON STOECHIOMETRIQUES (II). DOPAGE DE GAAS ET GA_1-XAL_XAS PAR LE ZINCJACOBS K; JACOBS B; BUTTER E et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 11; PP. 1209-1217; ABS. ANGL.; BIBL. 11 REF.Serial Issue

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

ELECTRONIC PROPERTIES OF FLAT-BAND SEMICONDUCTEUR HETEROSTRUCTURESWHITE SR; SHAM LJ.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 12; PP. 879-882; BIBL. 18 REF.Article

SYNTHESIS AND CRYSTAL GROWTH OF GAAS AND GAP FOR SUBSTRATES.VON NEIDA AR; NIELSEN JW.1974; SOLID STATE TECHNOL.; U.S.A.; DA. 1974; VOL. 17; NO 4; PP. 90-98 (7P.); BIBL. 35 REF.Article

VARIBAND SOLAR PHOTOELECTRIC GENERATORS WITH GAP-WIDTH GRADIENT DEPENDENT ON COORDINATESIMENKOV AN; TAKIBAEV ZH S; TAURBAEV TI et al.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 3; PP. 490-496; BIBL. 12 REF.Article

VARIATION DE LA STRUCTURE DE BANDES DE LA SOLUTION SOLIDE DE GE_2X(GAAS)_1-X EN FONCTION DU DEGRE D'ORDREGUBANOV AI; POLUBOTKO AM.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1848-1851; BIBL. 5 REF.Article

SIMULATION NUMERIQUE ET MODELISATION DES PROPRIETES DES STRUCTURES ELECTROLUMINESCENTES A HETEROJONCTIONS MULTIPLESMOTAWIE IBRAHIM.1979; ; FRA; DA. 1979; 891; (8)-235 P.: ILL.; 30 CM; BIBL. 71 REF.; TH.: SCI., MATER. ET COMPOSANTS ACTIFS/TOULOUSE 3/1979Thesis

THE ORIGIN OF LARGE DARK SPOTS IN AL_XGA_1-XAS-GAAS HETEROSTRUCTURE PHOTOLUMINESCENCE.HENRY CH; LOGAN RA.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 203-205; BIBL. 4 REF.Article

CHEMICAL VAPOR PHASE DEPOSITION OF GAAS AND ALGAAS.BACHEM KH; HEYEN M.1976; VIDE; FR.; DA. 1976; VOL. 183; SUPPL.; PP. 50-64; BIBL. 11 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

NEW APPARATUS FOR MULTI-LAYER LIQUID PHASE EPITAXY.KAWAMURA K; YAMAMOTO T.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 32; NO 2; PP. 157-160; BIBL. 9 REF.Article

MULTIPLE LAYER (ALGA) AS-GAAS HETEROJUNCTION LASER DIODES: SYNTHESIS AND MODE CONTROL.LOCKWOOD HF; KRESSEL H.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 97-105; BIBL. 19 REF.Article

CHANNELLED-SUBSTRATE NARROW-STRIPE GAAS/GAALAS INJECTION LASERS WITH EXTREMELY LOW THRESHOLD CURRENTSKIRKBY PA.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 25; PP. 824-826; BIBL. 6 REF.Article

PROTON-BOMBARDMENT ISOLATED GAALAS/GAAS CHARGE-COUPLED DEVICESLIU YZ; ANDERSON RJ; DEYHIMY I et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 9; PP. 327-329; BIBL. 9 REF.Article

THE INFLUENCE OF TECHNOLOGICAL PARAMETERS ON SPECTRAL PROPERTIES OF DOUBLE-HETEROSTRUCTURE SUPERLUMINESCENT DIODESAMANN MC; BOECK J; HART W et al.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 6; PP. 635-640; BIBL. 6 REF.Article

MATRICES ELECTROLUMINESCENTES MONOLITHIQUES A BASE D'HETEROJONCTIONS ALGEAS-GAASALFEROV ZH I; ANDREEV VM; SYRBU AV et al.1977; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1977; VOL. 47; NO 12; PP. 2547-2554; BIBL. 17 REF.Article

MEASUREMENT OF GA AND AL IN A MOLECULAR-BEAM EPITAXY CHAMBER BY ATOMIC ABSORPTION SPECTROMETRY (AAS).KOMETANI TY; WIEGMANN W.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 933-936; BIBL. 11 REF.Conference Paper

EPITAXIE EN PHASE LIQUIDE DES SEMI-CONDUCTEURSBOLKHOVITYANOV YU B.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 2; PP. 28-41; BIBL. 44 REF.Article

COMPARAISON DES DIFFERENTS MODELES D'HETEROPHOTOCONVERTISSEURS DANS LE SYSTEME P-AL_XGA_1-XAS-NGAAS DU POINT DE VUE DE L'OBTENTION DU RENDEMENT MAXIMUMANDREEV VM; KAGAN MB; LYUBASHEVSKAYA TL et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 7; PP. 1328-1334; BIBL. 18 REF.Article

MICROWAVE DETECTION WITH N-GAAS/N-GAA/AS HETEROJUNCTIONSLECHNER A; KNEIDINGER M; THIM HW et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 9; PP. 254-255; BIBL. 11 REF.Article

EPITAXIAL GROWTH OF (ALGA)AS AND GAAS ON (ALGA)AS SUBSTRATE.HORIKOSHI Y; FURUKAWA Y.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 11; PP. 1727-1732; BIBL. 5 REF.Article