Pascal-Francis CNRS

Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:(%22ISOLATED GATE FIELD EFFECT TRANSISTOR%22)

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 773056

  • Page / 30923
Export

Selection :

  • and

THICK FILM COMPATIBLE TRANSISTORS.AWATAR SINGH.1977; J. SCI. INDUSTR. RES.; INDIA; DA. 1977; VOL. 36; NO 3; PP. 118-120; BIBL. 7 REF.Article

INVERSION-MODE INSULATED GATE GA0.47 IN0.53 AS FIELD-EFFECT TRANSISTORSWIEDER HH; CLAWSON AR; ELDER DI et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 3; PP. 73-74; BIBL. 9 REF.Article

ANALYSIS AND CHARACTERIZATION OF THE DEPLETION-MODE IGFETEL MANSY YA.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 331-340; BIBL. 11 REF.Article

DRAIN-VOLTAGE DEPENDENCE OF IGFET TURN-ON VOLTAGE.LUONG MO DANG.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 825-830; BIBL. 9 REF.Article

RESISTIVE-GATE-INDUCED THERMAL NOISE IN IGFET'STHORNBER KK.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 4; PP. 414-415; BIBL. 3 REF.Article

DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOROGURA S; TSANG PJ; WALKER WW et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 424-432; BIBL. 23 REF.Article

A GENERAL FOUR-TERMINAL CHARGING-CURRENT MODEL FOR THE INSULATED-GATE FIELD-EFFECT TRANSISTOR. IROBINSON JA; EL MANSY YA; BOOTHROYD AR et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 405-410; BIBL. 8 REF.Article

DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOROGURA S; TSANG PJ; WALKER WW et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1359-1367; BIBL. 23 REF.Article

MECHANISM OF OPERATION OF FIELD-EFFECT DEVICESGUPTA RK.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1011-1014; BIBL. 14 REF.Article

A MICROWAVE GAAS INSULATED GATE FET.LILE DL; COLLINS DA; MESSICK L et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 4; PP. 247-248; BIBL. 14 REF.Article

A NEW POLYMER INSULATED GATE FIELD-EFFECT TRANSISTORAKTIK M; SEGUI Y; BUI AI et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 5; NO 9; PP. 5055-5057; BIBL. 6 REF.Article

THE EFFECTS OF TWO-DIMENSIONAL CHARGE SHARING ON THE ABOVETHRESHOLD CHARACTERISTICS OF SHORT-CHANNEL IGFETSTAYLOR GW.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 8; PP. 701-717; BIBL. 13 REF.Article

A MICROWAVE INPSIO2 MISFET.MESSICK L; LILE DL; CLAWSON AR et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 8; PP. 494-495; BIBL. 3 REF.Article

OFFSET CHANNEL INSULATED GATE FIELD-EFFECT TRANSISTORSCHEN CY; CHO AY; GOSSARD AC et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 360-362; BIBL. 16 REF.Article

A GENERAL FORMULATION OF THE PARAMETERS OF THE EQUIVALENT CIRCUIT MODEL OF THE IGFET. IIEL MANSY YA; BOOTHROYD AR.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 411-414; BIBL. 4 REF.Article

SUBTHRESHOLD BEHAVIOUR OF E.S.F.I.-S.O.S. TRANSISTORS.KRANZER D; FICHTNER W.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 6; PP. 161-162; BIBL. 5 REF.Article

BORON SEGREGATION DATA FOR D. M.O.S. DEVICES.LADBROOKE PH; STRUDWICK MN.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 5; PP. 128-129; BIBL. 6 REF.Article

ION-IMPLANTED THRESHOLD TAILORING FOR INSULATED GATE FIELD-EFFECT TRANSISTORS.TROUTMAN RR.1977; I.E.E.E. TRANS ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 182-192; BIBL. 24 REF.Article

A NEW APPROACH TO THE THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS.EL MANSY YA; BOOTHROYD AR.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 241-253; BIBL. 20 REF.Article

SMALL-SIGNAL SUBTHRESHOLD MODEL FOR I.G.F.E.T.S.BARKER RWJ.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 10; PP. 260-262; BIBL. 7 REF.Article

A TIME-DEPENDENT NUMERICAL MODEL OF THE INSULATED-GATE FIELD-EFFECT TRANSISTORMOCK MS.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 959-966; BIBL. 12 REF.Article

VELOCITY OF SURFACE CARRIERS IN INVERSION LAYERS ON SILICONCOEN RW; MULLER RS.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 35-40; BIBL. 10 REF.Article

HIGH-ACCURACY EXTRACTION OF BURIED-CHANNEL M.O.S. TRANSISTOR THRESHOLD VOLTAGES.GABLER L; HOEFFLINGER B; SCHNEIDER J et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 23-24; BIBL. 2 REF.Article

IMPURITY PROFILE DETERMINATION AND DC MODELING OF THE JIGFET.VERBRAEKEN CG; SANSEN WMC; VAN OVERSTRAETEN RJ et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 723-730; BIBL. 15 REF.Article

A SIMPLE TWO-DIMENSIONAL MODEL FOR IGFET OPERATION IN THE SATURATION REGION.EL MANSY YA; BOOTHROYD AR.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 254-262; BIBL. 17 REF.Article

  • Page / 30923