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Time- and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPEGURSKII, A. L; MARKO, I. P; LUTSENKO, E. V et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 361-364, issn 0370-1972Conference Paper

Thermally stimulated currrent in fast neutron irradiated semi-insulating GaAs : Ga antisite related new trapKURIYAMA, K; TOMIZAWA, K; KOGA, K et al.Applied physics letters. 1993, Vol 63, Num 14, pp 1966-1968, issn 0003-6951Article

Impurity-related emission in the photoluminescence from p-type modulation doped Al_1-xGa_xAs/GaAs heterostructuresBRYJA, L; KUBISA, M; RYCZKO, K et al.Solid state communications. 2002, Vol 122, Num 7-8, pp 379-384, issn 0038-1098Article

X-ray diffraction, photoluminescence and secondary ion mass spectroscopy study of GaN films grown on Si(111) substrate by vacuum reactive evaporationHAOXIANG ZHANG; ZHIZHEN YE; BINGHUI ZHAO et al.Semiconductor science and technology. 2000, Vol 15, Num 7, pp 649-652, issn 0268-1242Article

Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substratesWUI, Y. H; KANG, T. W; KIM, T. W et al.Applied surface science. 1999, Vol 148, Num 3-4, pp 211-214, issn 0169-4332Article

Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopantsGERARD, F; THEYS, B; LUSSON, A et al.Semiconductor science and technology. 1999, Vol 14, Num 12, pp 1136-1140, issn 0268-1242Article

Excitation mechanisms of multiple Er³⁺ sites in Er-implanted GaN : III-V nitrides and silicon carbideKIM, S; RHEE, S. J; LI, X et al.Journal of electronic materials. 1998, Vol 27, Num 4, pp 246-254, issn 0361-5235Article

Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaNREYNOLDS, D. C; LOOK, D. C; JOGAI, B et al.Solid state communications. 1997, Vol 101, Num 9, pp 643-646, issn 0038-1098Article

Effect of annealing and hydrogenation on neutron-transmutation-doped GaAsCHO, H. D; SHON, Y; KANG, T. W et al.Physica status solidi. A. Applied research. 1994, Vol 146, Num 2, pp 603-611, issn 0031-8965Article

Effect of heat treatment on the state of Si impurity in GaAs studied with the photoluminescence techniqueSUEZAWA, M; KASUYA, A; NISHINA, Y et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 3035-3040, issn 0021-8979Article

Formation of four new shallow emissions in Mn⁺ ion-implanted GaAs grown by molecular beam epitaxy having extremely low concentration of background impuritiesHONGLIE SHEN; MAKITA, Y; NIKI, S et al.Applied physics letters. 1993, Vol 63, Num 13, pp 1780-1782, issn 0003-6951Article

Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductorsLOZYKOWSKI, H. J.Physical review. B, Condensed matter. 1993, Vol 48, Num 24, pp 17758-17769, issn 0163-1829Article

Far-infrared absorption due to shallow acceptors in semi-insulating GaAs in dependence on EL2 bleachingGOMENIUK, Y. V; ALT, H. Ch; KRETZER, U et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 1, pp 139-147, issn 0370-1972, 9 p.Article

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayersJUNYONG KANG; YAOWEN SHEN; ZHANGUO WANG et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 303-307, issn 0921-5107Conference Paper

Preparation of InP-based semiconductor materials with low density of defects : Effect of Nd, Ho and Tb additionPROCHAZKOVA, O; ZAVADIL, J; ZDANSKY, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 407-411, issn 0921-5107Conference Paper

Phonon-assisted optical transitions in GaN with impurities and defectsTRONC, P; KITAEV, Yu. E; WANG, G et al.Physica. B, Condensed matter. 2001, Vol 302-03, pp 291-298, issn 0921-4526Conference Paper

The 3.466 eV bound exciton in GaNMONEMAR, B; CHEN, W. M; PASKOV, P. P et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 489-492, issn 0370-1972Conference Paper

Defects and defect identification in group III-nitridesMEYER, B. K; HOFMANN, D. M; ALVES, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 69-76, issn 0921-5107Conference Paper

Passivation of shallow and deep by hyrogen plasma exposure in alGAAs growth by molecular beam epitaxyBOSACCHI, A; FRANCHI, S; GOMBIA, E et al.Japanese journal of applied physics. 1994, Vol 33, Num 6A, pp 3348-3353, issn 0021-4922, 1Article

Photoluminescence properties of (Al,Ga)As alloys and GaAs under pressure in the framework of DX centers studiesLEROUX, M.Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum. 1994, Vol 108, pp 97-122, issn 1012-0386Article

Electron structure of rare-earth impurities in III-V compounds (a review article)MASTEROV, V. F; TYBULEWICZ, A.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 9, pp 791-801, issn 1063-7826Article

Nitrogen-related complexes in Ga(AsN) and their interaction with hydrogenBISSIRI, M; GASPARI, V; VON HOGERSTHAL, G. Baldassarri et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 3, pp 651-654, issn 0031-8965Conference Paper

Origin of yellow luminescence in n-GaN induced by high-energy 7 MeV electron irradiationHAYASHI, Yasuhiko; SOGA, Tetsuo; UMENO, Masayoshi et al.Physica. B, Condensed matter. 2001, Vol 304, Num 1-4, pp 12-17, issn 0921-4526Article

Activation of p-type GaN with irradiation of the second harmonics of a Q-switched Nd:YAG laserCHENG, Yung-Chen; LIAO, Chi-Chih; FENG, Shih-Wei et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 357-360, issn 0370-1972Conference Paper