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Results 1 to 25 of 141970

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Characterization of electrically active dopant profiles with the spreading resistance probeCLARYSSE, T; VANHAEREN, D; HOFLIJK, I et al.Materials science & engineering. R, Reports. 2004, Vol 47, Num 5-6, pp 123-206, issn 0927-796X, 84 p.Article

Practical methods to determine hydrogen and hydroxyl contents in quartz crystalsBOY, Jean-Jacques; YAMNI, K; PASQUALI, M. A et al.Annales de chimie (Paris. 1914). 2001, Vol 26, Num 1, pp 11-17, issn 0151-9107Article

Impurities identification in a synthetic diamond by transmission electron microscopyYIN, Long-Wei; ZOU, Zeng-Da; LI, Mu-Sen et al.Diamond and related materials. 2000, Vol 9, Num 12, pp 2006-2009, issn 0925-9635Article

Assessment of carbon concentrations in polycrystalline and monocrystalline gallium arsenide using SSMS, FTIR, and CPAAWIEDEMANN, B; ALT, H. C; BETHGE, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 66, Num 1-3, pp 118-122, issn 0921-5107Conference Paper

Oxygen content in β-Si3N4 crystal latticeKITAYAMA, M; HIRAO, K; TSUGE, A et al.Journal of the American Ceramic Society. 1999, Vol 82, Num 11, pp 3263-3265, issn 0002-7820Article

Quantitative evaluation of precipitated oxygen in silicon by infrared spectroscopy : Still an open problemSASSELLA, A; BORGHESI, A; ABE, T et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 5, pp 1715-1719, issn 0013-4651Article

Tetragonal distortions of the octahedral environments of Cr3+, Fe3+ and Gd3+ ions in A2CdF4 (A = Rb, Cs) and ACdF3 crystalsZHENG WEN-CHEN.Radiation effects and defects in solids. 1998, Vol 145, Num 1-2, pp 169-178, issn 1042-0150Article

Hydrogen outgassing of synthetic quartz after annealing up to ∼ 1000°CBACHHEIMER, J. P.Annales de chimie (Paris. 1914). 1997, Vol 22, Num 8, pp 699-701, issn 0151-9107Conference Paper

Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafersGRÄF, D; LAMBERT, U; BROHL, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 50-54, issn 0921-5107Conference Paper

Effects of annealing in oxygen and nitrogen atmosphere on F.Z. silicon wafersGAY, N; FLORET, F; MARTINUZZI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 125-128, issn 0921-5107Conference Paper

Non-doping light impurities in silicon for solar cellsPIVAC, B; SASSELLA, A; BORGHESI, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 55-62, issn 0921-5107Conference Paper

The nitrogen-pair oxygen defect in siliconBERG RASMUSSEN, F; ÖBERG, S; JONES, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 91-95, issn 0921-5107Conference Paper

A SIMS study of hydrogen in acceptor-doped perovskite oxidesDE SOUZA, R. A; KILNER, J. A; STEELE, B. C. H et al.Solid state ionics. 1995, Vol 77, pp 180-184, issn 0167-2738Conference Paper

Theoretical study of the coordination of the Cr3+ ion in α-Al2O3FRANCO, R; RECIO, J. M; MARTIN PENDAS, A et al.Radiation effects and defects in solids. 1995, Vol 134, Num 1-4, pp 123-126, issn 1042-0150Conference Paper

Accurate evaluation techniques of interstitial oxygen concentrations in medium-resistivity Si crystalsKITAGAWARA, Y; TAMATSUKA, M; TAKENAKA, T et al.Journal of the Electrochemical Society. 1994, Vol 141, Num 5, pp 1362-1364, issn 0013-4651Article

Production of semiconductor grade high-purity ironUCHIKOSHI, Masahito; IMAIZUMI, Junichi; SHIBUYA, Hideka et al.Thin solid films. 2004, Vol 461, Num 1, pp 94-98, issn 0040-6090, 5 p.Conference Paper

Theoretical study of interstitial atoms distribution in the bulk and at the surface of crystal. Surface segregationSCHUR, D. V; MATYSINA, Z. A; ZAGINAICHENKO, S. Yu et al.Journal of alloys and compounds. 2002, Vol 330-32, pp 81-84, issn 0925-8388Article

Optical quantitative determination of doping levels and their distribution in SiCWELLMANN, P. J; WEINGÄRTNER, R; BICKERMANN, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 75-78, issn 0921-5107Conference Paper

Determination of metallic impurities in high-purity type IIa diamond grown by high-pressure and high-temperature synthesis using neutron activation analysisKANEKO, Junichi; YONEZAWA, Chushiro; KASUGAI, Yoshimi et al.Diamond and related materials. 2000, Vol 9, Num 12, pp 2019-2023, issn 0925-9635Article

The nitrogen aggregation sequence and the formation of voidites in diamondKIFLAWI, I; BRULEY, J.Diamond and related materials. 2000, Vol 9, Num 1, pp 87-93, issn 0925-9635Article

Nanosecond laser annealing of zinc-doped indium phosphideIVLEV, G. D; MARKEVICH, M. I; CHAPLANOV, A. M et al.Inorganic materials. 1999, Vol 35, Num 4, pp 309-312, issn 0020-1685Article

Impurity precipitation in Ge-doped CdTe crystalsSHCHERBAK, L. P; FEICHUK, P. I; PANCHUK, O. E et al.Inorganic materials. 1998, Vol 34, Num 1, pp 17-22, issn 0020-1685Article

A study of the structure and composition of Si-doped PbTiO3PALKAR, V. R; CHATTOPADHYAY, S; AYYUB, P et al.Materials letters (General ed.). 1997, Vol 32, Num 2-3, pp 171-174, issn 0167-577XArticle

Application of the SIMS method in studies of Cr segregation in Cr-doped CoO: II, depth profilesBERNASIK, A; NOWOTNY, J; SCHERRER, S et al.Journal of the American Ceramic Society. 1997, Vol 80, Num 2, pp 349-356, issn 0002-7820Article

Oxygen precipitates in annealed CZ silicon wafers detected by SIRM and FTIR spectroscopyVEVE, C; STEMMER, M; MARTINUZZI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 200-203, issn 0921-5107Conference Paper

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