au.\*:(%22Japanese Association for Crystal Growth%22)
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ABSTRACTS/ANNUAL CONFERENCE ON CRYSTAL GROWTH, SOUTHAMPTON, SEPTEMBER 23-26, 19801980; ANNUAL CONFERENCE ON CRYSTAL GROWTH/1980-09-23/SOUTHAMPTON; GBR; DA. 1980; 35 P.; 21 CMConference Proceedings
Proceedings/Purification of materials for crystal growth and glass processing. Workshop, Watsonville, CA, 14-17 May 1985FEIGELSON, R. S.Journal of crystal growth. 1986, Vol 75, Num 1, issn 0022-0248, IX-194 pConference Proceedings
Proceedings of BACG Annual Meeting, 2003CAPPER, Peter.Journal of materials science. Materials in electronics. 2004, Vol 15, Num 11, issn 0957-4522, 60 p.Conference Proceedings
Metalorganic vapour phase epitaxy 1996MULLIN, J. B.Journal of crystal growth. 1997, Vol 170, Num 1-4, issn 0022-0248, 850 p.Conference Proceedings
ACCG-7: proceedings/Joint conference of 7th American Conference on Crystal Growth with 3rd international conference on II-VI compounds, Monterey CA, July 12-17, 1987STRINGFELLOW, G. B.Journal of crystal growth. 1987, Vol 85, Num 1-2, issn 0022-0248, XIII-307 pConference Proceedings
Collected abstracts/International conference on crystal growth and characterization of polytype structures, Marseilles, July 3-6, 1984 = Résumés de la Conférence Internationale sur la croissance cristalline et la caractérisation des structures polytypes, Marseille, 3-6 juillet 1984International conference on crystal growth and characterization of polytype structures. 1984, 77 p.Conference Proceedings
Liquid phase electroepitaxial growth of thick and compositionally uniform AlGaAs layers on GaAs substratesZYTKIEWICZ, Z. R.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 283-286, issn 0022-0248Conference Paper
Metalorganic vapor phase epitaxy of wide-gap II-VI semiconductors for optoelectronic applications : current status and future trendsHEUKEN, M.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 570-579, issn 0022-0248Conference Paper
Bulk vapour growth of CdTeGRASZA, K.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 65-68, issn 0022-0248Conference Paper
Doping of wide gap II-VI compoundsFASCHINGER, W.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 80-86, issn 0022-0248Conference Paper
Effect of temperature field on growth stabilityGRASZA, K.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 69-74, issn 0022-0248Conference Paper
Elementary processes in molecular beam epitaxy studied by in-situ scanning electron microscopyINOUE, N.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 334-339, issn 0022-0248Conference Paper
Recent progress in multi-wafer CBE systemsANDO, H.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 16-22, issn 0022-0248Conference Paper
Special Issue for the 2002 BACG ConferenceCAPPER, Peter; IRVINE, Stuart.Journal of materials science. Materials in electronics. 2003, Vol 14, Num 9, issn 0957-4522, 76 p.Conference Proceedings
American crystal growth and epitaxy 1999HOPKINS, R; SCRIPA, R; BALAKRISHNA, V et al.Journal of crystal growth. 2000, Vol 211, Num 1-4, issn 0022-0248, 544 p.Conference Proceedings
MOVPE : is there any other technology for optoelectronics ?MOON, R. L.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 1-10, issn 0022-0248Conference Paper
Eighth American conference on crystal growth, Vail CO, USA, 15-20 July 1990BOATNER, L. A; CISZEK; SUREK, I et al.Journal of crystal growth. 1991, Vol 109, Num 1-4, issn 0022-0248, 494 p.Conference Proceedings
ABSTRACTS AND CONFERENCE PROGRAM/ACCG 4: 4TH AMERICAN CONFERENCE ON CRYSTAL GROWTH, GAITHERSBURG, MD, JULY 16-19, 19781978; ACCG 4. AMERICAN CONFERENCE ON CRYSTAL GROWTH. 4/1978-07-16/GAITHERSBURG, MD; USA; DA. 1978; XXIV-162 P.: ILL.Conference Proceedings
Papers/4th International conference on molecular beam epitaxy September 7-10, 1986, York GBRFOXON, C. T; HARRIS, J. J.Journal of crystal growth. 1987, Vol 81, Num 1-4, issn 0022-0248, XVI-580 pConference Proceedings
A new lattice relaxation mode in InGaAs on GaAsFUJII, T; YAMAZAKI, S.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 489-494, issn 0022-0248Conference Paper
Atomic force microscopy observation of the epitaxial growth of organic moleculesMATSUSHIGE, K; HAMANO, T; HORIUCHI, T et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 641-644, issn 0022-0248Conference Paper
Effects of adsorbates on step coverage in TiN chemical vapor depositionOHSHITA, Y; FUKAGAWA, W; KOBAYASHI, A et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 188-192, issn 0022-0248Conference Paper
Growth of CuInTe2 polycrystalline thin filmsNADENAU, V; WALTER, T; SCHOCK, H. W et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 251-255, issn 0022-0248Conference Paper
In situ monitoring of the growth process in GaAs atomic layer epitaxy by gravimetric and optical methodsKOUKITU, A; TAKAHASHI, N; SEKI, H et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 467-474, issn 0022-0248Conference Paper
Liquid phase epitaxy and photoluminescence characterization of p-type GaSb layers grown from Bi based meltsGLADKOV, P; MONOVA, E; WEBER, J et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 319-325, issn 0022-0248Conference Paper