Dielectrics for nanosystems II (materials science, processing, reliability, and manufacturing)Misra, D; Iwai, H.Proceedings - Electrochemical Society. 2006, issn 0161-6374, isbn 1-56677-438-1, 1Vol, VIII-340 p, isbn 1-56677-438-1Conference Proceedings

Parameters of intrinsic point defects in silicon based on crystal growth, wafer processing, self-and metal-diffusionVORONKOV, V. V; FALSTER, R.Proceedings - Electrochemical Society. 2006, pp 61-75, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 15 p.Conference Paper

Growth technologies for 300 mm arsenic heavily doped silicon crystalsHAILING TU; QIGANG ZHOU; GUOHU ZHANG et al.Proceedings - Electrochemical Society. 2006, pp 89-94, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 6 p.Conference Paper

Defect formation behaviors in heavily doped czochralski siliconSUGIMURA, Wataru; ONO, Toshiaki; UMENO, Shigeru et al.Proceedings - Electrochemical Society. 2006, pp 95-107, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 13 p.Conference Paper

Influence of gas velocity and humidity on diethyl phthalate adsorption and desorption on silicon surfaceHABUKA, Hitoshi; TAWADA, Masaki; SUZUKI, Kisho et al.Proceedings - Electrochemical Society. 2006, pp 523-536, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 14 p.Conference Paper

Forty years of Moore's Law : ever smaller transistors and ever larger wafersDAN HUTCHESON, G.Proceedings - Electrochemical Society. 2006, pp 3-9, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 7 p.Conference Paper

Front-end process technology for hp65/45 CMOS devicesNARA, Yasuo; OOTSUKA, Fumio; NAKAMURA, Kunio et al.Proceedings - Electrochemical Society. 2006, pp 27-31, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 5 p.Conference Paper

Discussion on Issues toward 450mm WaferWATANABE, M; FUKUDA, T; OGURA, A et al.Proceedings - Electrochemical Society. 2006, pp 155-165, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 11 p.Conference Paper

300 MM SOI for high volume manufacturingPFEIFFER, G; HAAG, M; SCHMIDT, M et al.Proceedings - Electrochemical Society. 2006, pp 167-181, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 15 p.Conference Paper

Multiple gate MOSFETsMASZARA, W. P; KRIVOKAPIC, Z; XIANG, Q et al.Proceedings - Electrochemical Society. 2006, pp 329-339, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 11 p.Conference Paper

Angle-resolved photoelectron spectroscopy study on gate insulatorsHATTORI, T; KAKUSHIMA, K; NAKAJIMA, K et al.Proceedings - Electrochemical Society. 2006, pp 275-286, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 12 p.Conference Paper

High-k gate stack engineering and low frequency noise performanceCLAEYS, C; SIMOEN, E; SRINIVASAN, P et al.Proceedings - Electrochemical Society. 2006, pp 287-300, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 14 p.Conference Paper

Advanced gate stacks with fully silicided (FUSI) gates and high-k dielectrics for low power CMOSOGURA, T; SAITOH, M; TATSUMI, T et al.Proceedings - Electrochemical Society. 2006, pp 301-309, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 9 p.Conference Paper

Charge trapping in high-k gate dielectrics : A recent understandingMISRA, D; CHOWDHURY, N. A.Proceedings - Electrochemical Society. 2006, pp 311-328, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 18 p.Conference Paper

Electrochemical studies on heazelwoodite flotation from Inco marteRAO, S. R; FINCH, J. A.Proceedings - Electrochemical Society. 2006, pp 3-8, issn 0161-6374, isbn 1-56677-440-3, 1Vol, 6 p.Conference Paper

Galvanic interactions between gold and sulfldes during thiosulfate leachingJEFFREY, M. I; THOMPSON, D. M; CHU, C. K et al.Proceedings - Electrochemical Society. 2006, pp 133-142, issn 0161-6374, isbn 1-56677-440-3, 1Vol, 10 p.Conference Paper

Hydrodynamic modeling of copper electrodeposition at a vertical rotating cylinder electrodeFABIAN, C; MANDIN, Ph; RIDD, M. J et al.Proceedings - Electrochemical Society. 2006, pp 303-315, issn 0161-6374, isbn 1-56677-440-3, 1Vol, 13 p.Conference Paper

Recent progress of sige heterostructure technologies for novel devicesMIYAO, Masanobu; KANNO, Hiroshi; SADOH, Taizoh et al.Proceedings - Electrochemical Society. 2006, pp 165-179, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 15 p.Conference Paper

Scaled CMOS with SiON and high-kISHIMARU, K; TAKAYANAGI, M; WATANABE, T et al.Proceedings - Electrochemical Society. 2006, pp 317-327, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 11 p.Conference Paper

Surface stoichiometry of lead sulfide and the sorption of xanthatesNOWAK, Pawel.Proceedings - Electrochemical Society. 2006, pp 83-94, issn 0161-6374, isbn 1-56677-440-3, 1Vol, 12 p.Conference Paper

The low leakage current density of MIS with SiO₂ thin film made by ICP-CVDLU, Y. M; TSAI, S. I; HON, M. H et al.Proceedings - Electrochemical Society. 2006, pp 261-266, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 6 p.Conference Paper

Silicon-on-insulator technology and devices XII (Quebec PQ, 15-20 May 2005)Celler, George K; Cristoloveanu, S; Gamiz, F et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-461-6, XI, 395 p, isbn 1-56677-461-6Conference Proceedings

Applications of bonding SOI technology to high performance LSI circuitsYOSHIMI, Makoto; LETERTRE, Fabrice; CAYREFOURCQ, Ian et al.Proceedings - Electrochemical Society. 2005, pp 9-19, issn 0161-6374, isbn 1-56677-460-8, 11 p.Conference Paper

200 mm germanium-on-insulator (GeOI) structures realized from epitaxial wafers using the Smart Cut<^TM> technologyDEGUET, C; DECHAMP, J; RICHTARCH, C et al.Proceedings - Electrochemical Society. 2005, pp 78-88, issn 0161-6374, isbn 1-56677-460-8, 11 p.Conference Paper

In-line critical leak rate testing of vacuum-sealed and backfilled resonating MEMS devicesRELNERT, Wolfgang; KÄHLER, Dirk; OLDSEN, Marten et al.Proceedings - Electrochemical Society. 2005, pp 233-240, issn 0161-6374, isbn 1-56677-460-8, 8 p.Conference Paper