An electrostatic force microscope study of Si nanostructures on Si(1 0 0) as a function of post-annealing temperature and timeSUN, Hai-Tong; LI, Zheng-Hao; JING ZHOU et al.Applied surface science. 2007, Vol 253, Num 14, pp 6109-6112, issn 0169-4332, 4 p.Article

Morphology evolution of Si nanowires synthesized by gas condensation of SiO without any catalystZHOU, J. F; SONG, F. Q; SHI, Z. T et al.The European physical journal. D, Atomic, molecular and optical physics (Print). 2005, Vol 34, Num 1-3, pp 307-310, issn 1434-6060, 4 p.Conference Paper

Grazing incidence X-ray scattering from Ge/Si superlattices grown at low temperatureWU, X. S; HASE, T. P. A; TANNER, B. K et al.Surface science. 2004, Vol 548, Num 1-3, pp 239-245, issn 0039-6028, 7 p.Article

Layer-by-layer growth of metal-metal bonded supramolecular thin films and its use in the fabrication of lateral nanoscale devicesCHUN LIN; KAGAN, Cherie R.Journal of the American Chemical Society. 2003, Vol 125, Num 2, pp 336-337, issn 0002-7863, 2 p.Article

Formation of ordered two-dimensional nanostructures of Cu on the Si(111)-(7 x 7) surfaceZHANG, Y. P; YANG, L; LAI, Y. H et al.Surface science. 2003, Vol 531, Num 3, pp L378-L382, issn 0039-6028Article

Misfit dislocations in composites with nanowiresGUTKIN, M. Yu; OVID'KO, I. A; SHEINERMAN, A. G et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 21, pp 3539-3554, issn 0953-8984, 16 p.Article

Nanodefects in nanostructuresOVID'KO, I. A.Philosophical magazine letters. 2003, Vol 83, Num 10, pp 611-620, issn 0950-0839, 10 p.Article

STM investigation on interaction between superstructure and grain boundary in graphiteYANG GAN; WUYANG CHU; LIJIE QIAO et al.Surface science. 2003, Vol 539, Num 1-3, pp 120-128, issn 0039-6028, 9 p.Article

Electrochemical formation of porous superlattices on n-type (100) InPTSUCHIYA, Hiroaki; HUEPPE, Michael; DJENIZIAN, Thierry et al.Surface science. 2003, Vol 547, Num 3, pp 268-274, issn 0039-6028, 7 p.Article

Macroscopic two-dimensional Wigner asymmetric islandsSAINT JEAN, M; GUTHMANN, C.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 49, pp 13653-13660, issn 0953-8984, 8 p.Article

Nucleation of the C40-to-C11_b transformation in magnetron-sputtered MoSi₂ thin filmsWANG, X. Y; CHANG, I. T. H; AINDOW, M et al.Philosophical magazine letters. 2002, Vol 82, Num 12, pp 687-694, issn 0950-0839, 8 p.Article

Spatial alignment evolution of self-assembled In_0.4Ga_0.6As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxyXU, H. Z; AKAHANE, K; SONG, H. Z et al.Applied surface science. 2001, Vol 185, Num 1-2, pp 92-98, issn 0169-4332Article

Characterisation of thin films containing Au and Pd nanoparticles by grazing-incidence X-ray diffraction and related methodsPEŁKA, J. B; PASZKOWICZ, W; DŁUZEWSKI, P et al.Journal of alloys and compounds. 2001, Vol 328, Num 1-2, pp 248-252, issn 0925-8388Conference Paper

Studies of the fractal microstructure of nanocrystalline and amorphous chromium obtained by electrodepositionPRZENIOSŁO, R; WAGNER, J; NATTER, H et al.Journal of alloys and compounds. 2001, Vol 328, Num 1-2, pp 259-263, issn 0925-8388Conference Paper

The microstructure and mechanical properties of TaN/TiN and TaWN/TiN superlattice filmsXU JUNHUA; LI GEYANG; GU MINGYUAN et al.Thin solid films. 2000, Vol 370, Num 1-2, pp 45-49, issn 0040-6090Article

AFM and RHEED study of Ge/Si(001) quantum dot modification by Si cappingBISCHOFF, J. L; PIRRI, C; DENTEL, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 69-70, pp 374-379, issn 0921-5107Conference Paper

Structure refinement of infinite-layer superlatticesDE CARO, L; GIANNINI, C; TAPFER, L et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2000, Vol 80, Num 5, pp 1047-1053, issn 1364-2812Conference Paper

Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplicationZHANG, X. G; LI, P; PARENT, D. W et al.Journal of electronic materials. 1999, Vol 28, Num 5, pp 553-558, issn 0361-5235Article

Surface roughening of heteroepitaxial thin filmsHUAJIAN GAO; NIX, W. D.Annual review of materials science. 1999, Vol 29, pp 173-209, issn 0084-6600Article

Effects of vicinal InP (001) surface on InAs dots grown by droplet hetero-epitaxyNONOGAKI, Y; IGUCHI, T; FUCHI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 58, Num 3, pp 195-198, issn 0921-5107Article

Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layersFERRARI, C; GENNARI, S; FRANCHI, S et al.Journal of crystal growth. 1999, Vol 205, Num 4, pp 474-480, issn 0022-0248Article

Step edge barrier controlled decay of multilayer islands on Cu(111)GIESEN, M; IBACH, H.Surface science. 1999, Vol 431, Num 1-3, pp 109-115, issn 0039-6028Article

The strain relaxation in a lattice-mismatched heterostructureLIM, Y. S; LEE, J. Y; KIM, T. W et al.Journal of crystal growth. 1999, Vol 200, Num 3-4, pp 421-426, issn 0022-0248Article

Transmission electron microscopy analysis of the shape and size of semiconductor quantum dotsANDROUSSI, Y; BENABBAS, T; LEFEBVRE, A et al.Philosophical magazine letters. 1999, Vol 79, Num 4, pp 201-208, issn 0950-0839Article

Characterisation of defects and piezoelectric fields in InGaN/GaN layers by transmission electron microscopyCHERNS, D; BARNARD, J; MOKHTARI, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 66, Num 1-3, pp 33-38, issn 0921-5107Conference Paper