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Results 1 to 25 of 11970

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Electron-beam-induced current and photoetching investigations of dislocations and impurity atmospheres in n-type liquid-encapsulated Czochralski GaAsFRIGERI, C; WEYHER, J. L.Journal of applied physics. 1989, Vol 65, Num 12, pp 4646-4653, issn 0021-8979, 8 p.Article

IL-22 : A critical mediator in mucosal host defenseAUJLA, S. J; KOLLS, J. K.Journal of molecular medicine (Berlin. Print). 2009, Vol 87, Num 5, pp 451-454, issn 0946-2716, 4 p.Article

Conditions of existence and character of the temperature fluctuations during Czochralski growth of oxide single crystalsILIEV, K; BERKOWSKI, M; NIKOLOV, V et al.Journal of crystal growth. 1991, Vol 108, Num 1-2, pp 219-224, issn 0022-0248Article

A new design for a UHV compatible Czochralski crystal growth systemBROWN, S. A; HOWARD, B. K; BROWN, S. V et al.Review of scientific instruments. 1990, Vol 61, Num 9, pp 2427-2429, issn 0034-6748Article

Welche Kältemittel in der Zukunft? = Which refrigerant in the future?DOÊRING, R.Die Kälte und Klimatechnik. 1990, Vol 43, Num 9, pp 472-482, issn 0343-2246, 6 p.Article

Influence of In-doping on dislocations in liquid encapsulated Czochralski (LEC) grown gallium arsenideWU, J; MO, P. G; WANG, G. Y et al.Journal of crystal growth. 1990, Vol 102, Num 4, pp 701-705, issn 0022-0248Article

The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski siliconROGERS, W. B; MASSOUD, H. Z; FAIR, R. B et al.Journal of applied physics. 1989, Vol 65, Num 11, pp 4215-4219, issn 0021-8979, 5 p.Article

Float-zone and Czochralski crystal growth and diagnostic solar cell evaluation of a new solar-grade feedstock sourceCISZEK, T. F; PAGE, M. R; WANG, T. H et al.sans titre. 2002, pp 210-213, isbn 0-7803-7471-1, 4 p.Conference Paper

Melt motion in a Czochralski puller with a weak transverse magnetic fieldWILLIAMS, M. G; WALKER, J. S; LANGLOIS, W. E et al.Journal of crystal growth. 1990, Vol 100, Num 1-2, pp 233-253, issn 0022-0248Article

Four test problems for the numerical simulation of flow in Czochralski crystal growthWHEELER, A. A.Journal of crystal growth. 1990, Vol 102, Num 4, pp 691-695, issn 0022-0248Article

Analysis of the dynamics of the controlled crystallization process using the czochralski methodSATUNKIN, G. A; ROSSOLENKO, S. N.Crystal research and technology (1979). 1986, Vol 21, Num 9, pp 1125-1138, issn 0232-1300Article

Th17 cytokines and mucosal immunityDUBIN, Patricia J; KOLLS, Jay K.Immunological reviews. 2008, Vol 226, pp 160-171, issn 0105-2896, 12 p.Article

Weighing control of the automatic crystallization process from the meltSATUNKIN, G. A; LEONOV, A. G.Journal of crystal growth. 1990, Vol 102, Num 3, pp 592-608, issn 0022-0248Article

A thermal model for Czorchralski silicon crystal growth with an axial magnetic fieldHJELLMING, L. N.Journal of crystal growth. 1990, Vol 104, Num 2, pp 327-344, issn 0022-0248Article

Transient regimes in the growth of large-diameter crystalsNALBANDYAN, G. H; NEMENOV, V. A.Crystal research and technology (1979). 1988, Vol 23, Num 4, pp 577-581, issn 0232-1300Article

Ultimate limitation on Czochralski pull rate due to constitutional supercoolingLEE, H. H.Journal of the Electrochemical Society. 1987, Vol 134, Num 4, pp 971-975, issn 0013-4651Article

On the dynamics of Czochralski crystal growthDERBY, J. J; BROWN, R. A.Journal of crystal growth. 1987, Vol 83, Num 1, pp 137-151, issn 0022-0248Article

IL-22, but Not IL-17, Dominant Environment in Cutaneous T-cell LymphomaMIYAGAKI, Tomomitsu; SUGAYA, Makoto; SUGA, Hiraku et al.Clinical cancer research (Print). 2011, Vol 17, Num 24, pp 7529-7538, issn 1078-0432, 10 p.Article

Installation avec évaporateur à air et condenseur à air = Refrigerating unit with an air evaporator and an air condenserJACQUARD, P.Revue pratique du froid et du conditionnement d'air. 1998, Num 862, pp 49-50, issn 0370-6699Article

Verwendung von KLEA 407A bei überfluteter Verdampfung = Using KLEA 407A with flooding evaporationLOW, B; TAYLOR, A.Die Kälte und Klimatechnik. 1996, Vol 49, Num 8, pp 528-531, issn 0343-2246, 3 p.Article

Austauschstoffe für R22: ein Überblick = Substitutes for R22: an overviewSCHWENNESEN, K.Die Kälte und Klimatechnik. 1994, Vol 47, Num 2, pp 59-62, issn 0343-2246, 3 p.Article

Internal heat transfer in Czochralski grown silicon crystalsWALLACE, J. P; TIEN, J. K; STEFANI, J. A et al.Journal of applied physics. 1991, Vol 69, Num 1, pp 550-552, issn 0021-8979Article

Atomic structure of twinss in GaAsBYUNG-TEAK LEE; JEONG YONG LEE; BOURRET, E. D et al.Applied physics letters. 1990, Vol 57, Num 4, pp 346-347, issn 0003-6951Article

Dislocation multiplication in GaAs: inhibition by dopingDJEMEL, A; CASTAING, J; BURLE-DURBEC, N et al.Revue de physique appliquée. 1989, Vol 24, Num 8, pp 779-793, issn 0035-1687, 15 p.Article

Numerical simulations of Czochralski silicon growthCHAN, Y. T; GIBELING, H. J; GRUBIN, H. L et al.Journal of applied physics. 1988, Vol 64, Num 3, pp 1425-1439, issn 0021-8979Article

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