PbTe photodiodes prepared by the hot-wall evaporation techniqueROGALSKI, A; KASZUBA, W; LARKOWSKI, W et al.Thin solid films. 1983, Vol 103, Num 4, pp 343-353, issn 0040-6090Article

System optimization and experimental research on air source heat pump water heaterZHANG, J; WANG, R. Z; WU, J. Y et al.Applied thermal engineering. 2007, Vol 27, Num 5-6, pp 1029-1035, issn 1359-4311, 7 p.Article

Experimental evaluation of CO₂ water heater. DiscussionYUNHO HWANG; RADERMACHER, R; ZIETLOW, D et al.Science et technique du froid. 1998, pp 368-375, issn 0151-1637, isbn 2-903633-97-5Conference Paper

Pressures in a dairy farm at refrigerant pad operated on refrigerant R22KEEDWELL, R. W; BALDWIN, A. J.International journal of refrigeration. 1995, Vol 18, Num 1, pp 67-71, issn 0140-7007Article

LOCALIZATION OF THE THIRD COMPONENT OF COMPLEMENT ON THE CELL WALL OF ENCAPSULATED STAPHYLOCOCCUS AUREUS M: IMPLICATIONS FOR THE MECHANISM OF RESISTANCE TO PHAGOCYTOSISWILKINSON BJ; SISSON SP; YOUNGKI KIM et al.1979; INFECT. AND IMMUN.; USA; DA. 1979; VOL. 26; NO 3; PP. 1159-1163; BIBL. 24 REF.Article

Selective epitaxial growth of silicon by the A.C. technique. II: Ion-implanted substrate/oxide surfacesWANG, Q. S; REISMAN, A; TEMPLE, D et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2450-2455, issn 0013-4651Article

Mechanisms of SiC growth by alternate supply of SiH₂Cl₂ and C₂H₂NAGASAWA, H; YAMAGUCHI, Y.-I.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 405-409, issn 0169-4332Conference Paper

Selective epitaxial growth of silicon by the A.C. technique. I: Nonimplanted substrate/oxide surfacesWANG, Q. S; REISMAN, A; TEMPLE, D et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2438-2449, issn 0013-4651Article

LONGITUDINAL VORTEX INSTABILITIES IN LAMINAR BOUNDARY LAYERS OVER CURVED HEATED SURFACES. = INSTABILITES EN TOURBILLONS LONGITUDINALES DANS DES COUCHES LIMITES LAMINAIRES SUR DES SURFACES CHAUFFEES COURBESKAHAWITA RA; MERONEY RN.1974; PHYS. OF FLUIDS; U.S.A.; DA. 1974; VOL. 17; NO 9; PP. 1661-1666; BIBL. 20 REF.Article

DEVELOPPEMENT DE LA THEORIE DE LA FUSION SOUS PRESSION SUR PAROI CHAUDEOHKADO S.1974; KAGAKU KOGAKU; JAP.; DA. 1974; VOL. 38; NO 6; PP. 439-444; ABS. ANGL.; BIBL. 2 REF.Article

Improving the energy storage capability of hot water tanks through wall material specificationARMSTRONG, P; AGER, D; THOMPSON, I et al.Energy (Oxford). 2014, Vol 78, pp 128-140, issn 0360-5442, 13 p.Article

SIGNIFICANCE OF COMPLEMENT ACTIVATION IN AUTOIMMUNE HAEMOLYTIC ANAEMIA OF WARM TYPE.KRETSCHMER V; MUELLER ECKHARDT C.1977; BLUT; DTSCH.; DA. 1977; VOL. 35; NO 6; PP. 447-455; ABS. ALLEM.; BIBL. 18 REF.Article

Alternative pathway activation of complement by African trypanosomes lacking a glycoprotein coatFERRANTE, A; ALLISON, A. C.Parasite immunology. 1983, Vol 5, Num 5, pp 491-498, issn 0141-9838Article

LOCALIZATION OF COMPLEMENT COMPONENT 3 ON STREPTOCOCCUS PNEUMONIAE: ANTI-CAPSULAR ANTIBODY CAUSES COMPLEMENT DEPOSITION ON THE PNEUMOCOCCAL CAPSULEBROWN EJ; JOINER KA; COLE RM et al.1983; INFECTION AND IMMUNITY; ISSN 0019-9567; USA; DA. 1983; VOL. 39; NO 1; PP. 403-409; BIBL. 15 REF.Article

Codeposition of free silicon during CVD of silicon carbideYEHESKEL, J; DARIEL, M. S.Journal of the American Ceramic Society. 1995, Vol 78, Num 1, pp 229-232, issn 0002-7820Article

The growth of PbTe on H-terminated Si(111) substrate by hot wall epitaxyYUKUN YANG; HAIYONG CHEN; DONGMEI LI et al.Infrared physics & technology. 2003, Vol 44, Num 4, pp 299-301, issn 1350-4495, 3 p.Article

Effect of the chemical nature of transition-metal substrates on chemical-vapor deposition of diamondCHEN, X; NARYAN, J.Journal of applied physics. 1993, Vol 74, Num 6, pp 4168-4173, issn 0021-8979Article

GREG: a new hotwall-close-spaced vapor transport deposition systemMENEZES, C; FORTMANN, C; CASEY, S et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 3, pp 709-711, issn 0013-4651Article

Hot-wall epitaxy of CdS thin films and their photoluminescenceHUMENBERGER, J; LINNERT, G; LISCHKA, K et al.Thin solid films. 1984, Vol 121, Num 1, pp 75-83, issn 0040-6090Article

Chauffage à basse température. La construction des chaudière doit satisfaire às certaines exigences = Heating at low temperature. Requirements to be satisfied by the boiler designBÖHM, G; SCHNEIDER, H.1990, Vol 43, Num 647, 20-25 [5 p.]Article

Pb_1-xSr_xS/PbS double-heterostructure lasers prepared by hot-wall expitaxyISHIDA, A; MURAMATSU, K; TAKASHIBA, H et al.Applied physics letters. 1989, Vol 55, Num 5, pp 430-431, issn 0003-6951Article

Low-temperature pre-treatments in a vertical epitaxial reactor with an improved vacuum load-lock chamberJIE WANG; INOKUCHI, Yasuhiro; KUNII, Yasuo et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S107-S109Conference Paper

Resonant Raman scattering in ZnS epilayersYU, Young-Moon; NAM, Sungun; O, Byungsung et al.Materials chemistry and physics. 2003, Vol 78, Num 1, pp 149-153, issn 0254-0584, 5 p.Article

Perspective method of receiving of the epitaxial layers and p-n structures at superhigh vacuumNURIYEV, I. R; AKHMEDOV, E. A; SALAYEV, E. Yu et al.SPIE proceedings series. 1999, pp 161-163, isbn 0-8194-3305-5Conference Paper

Hot-wall epitaxy system for the growth of multilayer IV-VI compound heterostructuresCLEMENS, H; FANTNER, E. J; BAUER, G et al.Review of scientific instruments. 1983, Vol 54, Num 6, pp 685-689, issn 0034-6748Article