ANALYSIS OF FIELD DISTRIBUTION IN A GAAS M.E.S.F.E.T. AT LARGE DRAIN VOLTAGES.SONE J; TAKAYAMA Y.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 23; PP. 622-624; BIBL. 5 REF.Article

SOME EFFECTS OF WAVE PROPAGATION IN THE GATE OF A MICROWAVE M.E.S.F.E.T.LADBROOKE PH.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 21-22; BIBL. 3 REF.Article

STATIC NEGATIVE RESISTANCE IN CALCULATED MESFET DRAIN CHARACTERISTICSNORTON DE; HAYES RE.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 570-572; BIBL. 10 REF.Article

TWO-DIMENSIONAL ELECTRON GAS M.E.S.F.E.T. STRUCTUREDELAGEBEAUDEUF D; DELESCLUSE P; ETIENNE P et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 17; PP. 667-668; BIBL. 10 REF.Article

S-PARAMETER MODEL OF DUAL-GATE GAAS MESFETASHOKA H; TUCKER RS.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 39-40; BIBL. 2 REF.Article

SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHINGTAKAHASHI S; MURAI F; KODERA H et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1213-1218; BIBL. 9 REF.Article

RAUSCHMESSUNGEN AN SILIZIUM-SPERRSCHICHT-FETS = MESURES DE BRUIT SUR LES TRANSISTORS A EFFET DE CHAMP A COUCHE D'ARRET AU SILICIUMGURMANN P.1980; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1980; VOL. 29; NO 19; PP. 85-89; BIBL. 5 REF.Article

ETUDE DES MECANISMES DE CLAQUAGE DANS UNE STRUCTURE DE TRANSISTORS A EFFET DE CHAMP AU GAASKERNER BS; KOZLOV NA; NECHAEV AM et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 3; PP. 217-225; BIBL. 16 REF.Article

DEGRADATION OF GAAS MESFETS IN 18 MEGOHM-CM H₂OWEITZEL CE; MIERS TH.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 2; PP. 35-37; BIBL. 6 REF.Article

GAAS MESFET FABRICATION USING MASHLESS ION IMPLANTATIONKUBENA RL; ANDERSON CL; SELIGER RL et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 6; PP. 152-154; BIBL. 5 REF.Article

ETUDE DE LA FIABILITE DES TRANSISTORS A EFFET DE CHAMP A BARRIERE SCHOTTKY EN GAAS POUR HYPERFREQUENCESMEIGNANT D.1980; ACTA ELECTRON; ISSN 0001-558X; FRA; DA. 1980; VOL. 23; NO 2; PP. 151-164; ABS. GER/ENG; BIBL. 13 REF.Article

NEW ESTIMATE OF THE MINIMUM NOISE FIGURE OF A M.E.S.F.E.T.BREWITT TAYLOR CR; ROBSON PN; SITCH JE et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 25; PP. 818-820; BIBL. 9 REF.Article

NOISE AND CHARACTERIZATION1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 12; PP. 761-765; ABS. FRE; BIBL. 15 REF.Conference Paper

OPTIMISED DOPING PROFILES FOR SPEED-UP OF GAAS M.E.S.F.E.T.S.KURUMADA K.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 15; PP. 481-482; BIBL. 2 REF.Article

MICROWAVE MESFET MIXER.KURITA O; MORITA K.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 361-366; BIBL. 5 REF.Article

GAAS FET'S.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; SUPPL. 1; PP. 143-157; BIBL. DISSEM.; (CONF. SOLID STATE DEVICES. 9. PROC.; TOKYO; 1977)Conference Paper

MODELLING OF GUNN-DOMAIN EFFECTS IN GAAS M.E.S.F.E.T.S.WILLING HA; DE SANTIS P.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 18; PP. 537-539; BIBL. 4 REF.Article

DESIGN CRITERIA FOR GAAS MESFETS RELATED TO STATIONARY HIGH FIELD DOMAINSEASTMAN LF; TIWARI S; SHUR MS et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 4; PP. 383-389; BIBL. 14 REF.Article

GAAS IC1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 19-1; PP. 313-348; BIBL. DISSEM.Conference Paper

CHANGES IN PHOTOVOLTAIC AND DARK ELECTRICAL PROPERTIES OF HYDROGENATED AMORPHOUS SILICON DIODES INDUCED BY FORWARD BIAS CARRIER INJECTIONSAKATA I; HAYASHI Y.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1075-1076; BIBL. 8 REF.Article

SHORT- AND LONG-RANGE ION-BEAM MIXING IN CU:AL: INFLUENCE OF INTERFACIAL OXIDEBESENBACHER F; BOTTIGER J; NIELSEN SK et al.1982; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 3; PP. 141-145; BIBL. 22 REF.Article

T-EMITTER BIPOLAR POWER TRANSISTOR WITH NEGATIVE-TEMPERATURE-GRADIENT CURRENT GAINJANKOVIC ND.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1085-1087; BIBL. 5 REF.Article

ORIENTATION EFFECT OF SELF-ALIGNED SOURCE/DRAIN PLANAR GAAS SCHOTTKY BARRIER FIELD-EFFECT TRANSISTORSYOKOYAMA N; ONODERA H; OHNISHI T et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 270-271; BIBL. 5 REF.Article

EVIDENCE OF DETRIMENTAL SURFACE EFFECTS ON GAAS POWER MESFETSDUMAS JM; PAUGAM J; LE MOUELLIC C et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1094-1095; BIBL. 9 REF.Article

DIRECT COMPARISON OF THE ELECTRON-TEMPERATURE MODEL WITH THE PARTICLE-MESH (MONTE CARLO) MODEL FOR THE GAAS MESFETCURTICE WR.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1942-1943; BIBL. 7 REF.Article