Pascal and Francis Bibliographic Databases

Help

Search results

Your search

ct.\*:(%22Mechanical contact %28friction...%29%22)

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 31897

  • Page / 1276
Export

Selection :

  • and

Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaNBOGART, Katherine H. A; CROFTON, John.Journal of electronic materials. 2006, Vol 35, Num 4, pp 605-612, issn 0361-5235, 8 p.Article

Comparison of Pd/Ge/Pd/Ti/Au and Pd/Ge/Ti/Pt ohmic contacts to n-type InGaAsKIM, Il-Ho.Materials letters (General ed.). 2003, Vol 57, Num 24-25, pp 4033-4039, issn 0167-577X, 7 p.Article

Contact electrification phenomena on phosphor particle surfacesTAMATANI, M.Journal of luminescence. 2002, Vol 100, Num 1-4, pp 317-323, issn 0022-2313, 7 p.Article

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide : III-V Nitrides and Silicon CarbideLEE, S.-K; KOO, S.-M; ZETTERLING, C.-M et al.Journal of electronic materials. 2002, Vol 31, Num 5, pp 340-345, issn 0361-5235Conference Paper

Nonalloyed Al ohmic contacts to MgxZn1-xOSHENG, H; EMANETOGLU, N. W; MUTHUKUMAR, S et al.Journal of electronic materials. 2002, Vol 31, Num 7, pp 811-814, issn 0361-5235Conference Paper

Electrical properties of graphite/homoepitaxial diamond contactCHEN, Y. G; HASEGAWA, M; OKUSHI, H et al.Diamond and related materials. 2002, Vol 11, Num 3-6, pp 451-457, issn 0925-9635Conference Paper

Development of Al-free ohmic contact to n-GaNKIM, Dae-Woo; JUN CHEOL BAE; LEE, Sung-Man et al.Journal of electronic materials. 2001, Vol 30, Num 7, pp 855-860, issn 0361-5235Article

Current-induced forces in atomic-scale conductorsTODOROV, T. N; HOEKSTRA, J; SUTTON, A. P et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2000, Vol 80, Num 3, pp 421-455, issn 1364-2812Article

Electrical properties of the Ta-RuO2 diffusion barrier for high-density memory devicesYOON, D.-S; HONG KOO BAIK; LEE, S.-M et al.Journal of the American Ceramic Society. 2000, Vol 83, Num 4, pp 949-951, issn 0002-7820Article

IR study of exclusion-accumulation effects enhanced by the geometrical factorMALYUTENKO, V. K; TESLENKO, G. I; VAINBERG, V. V et al.Semiconductor science and technology. 2000, Vol 15, Num 11, pp 1054-1060, issn 0268-1242Article

Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stabilityJOON SEOP KWAK; MOHNEY, S. E; LIN, J.-Y et al.Semiconductor science and technology. 2000, Vol 15, Num 7, pp 756-760, issn 0268-1242Article

High temperature performance of ohmic contacts to N-type GaN and GaAsCHERN, J.-H; HWU, R. J; SADWICK, L. P et al.SPIE proceedings series. 1999, pp 223-232, isbn 0-8194-3281-4Conference Paper

Determination of ohmic contacts to n-type 6H- and polycrystalline 3C-SiC using circular transmission line structuresKRIZ, J; GOTTFRIED, K; KAUFMANN, C et al.Diamond and related materials. 1998, Vol 7, Num 1, pp 77-80, issn 0925-9635Article

High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC : III-V nitrides and silicon carbideODER, T. N; WILLIAMS, J. R; BOZACK, M. J et al.Journal of electronic materials. 1998, Vol 27, Num 4, pp 324-329, issn 0361-5235Article

Chemistry and electronic properties of metal contacts on an organic molecular semiconductorHIROSE, Y; WU, C. I; ARISTOV, V et al.Applied surface science. 1997, Vol 113114, pp 291-298, issn 0169-4332Conference Paper

Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formationsKIM, H.-S; LEE, Y.-H; YEOM, G.-Y et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1997, Vol 50, Num 1-3, pp 82-87, issn 0921-5107Conference Paper

On additional conductance quantization and related effects of an electric field in 2D quantum point contactsONIPKO, A. I; MALYSHEVA, L. I; KLIMENKO, YU. A et al.Physica. B, Condensed matter. 1996, Vol 225, Num 1-2, pp 125-131, issn 0921-4526Article

How to fabricate low-resistance metal-diamond contactsWERNER, M; JOB, R; DENISENKO, A et al.Diamond and related materials. 1996, Vol 5, Num 6-8, pp 723-727, issn 0925-9635Conference Paper

The damage energy transfer to interfacial oxide by phosphorus ion implantation for small geometry polysilicon to polysilicon contactSHIBATA, H; HASHIMOTO, K.Japanese journal of applied physics. 1995, Vol 34, Num 3, pp 1472-1476, issn 0021-4922, 1Article

A new method for measuring the conductivity of arbitrarily shaped two-dimensional samplesVAN GELDER, A. P.Physica. B, Condensed matter. 1995, Vol 204, Num 1-4, pp 149-152, issn 0921-4526Article

Selective deposition of tungsten on ITM-CoSi2KÄHLER, J. D; DEPTA, D; FERRETTI, R et al.Applied surface science. 1995, Vol 91, pp 339-341, issn 0169-4332Conference Paper

Dissipation of contact-electrified charge on thin Si-oxide studied by atomic microscopyMORITA, S; FUKANO, Y; UCHIHASHI, T et al.Applied surface science. 1994, Vol 75, Num 1-4, pp 151-156, issn 0169-4332Conference Paper

Difference between static and dynamic frictional forcesLEVINSHTEIN, M. E; RUMYANTSEV, S. L; TYBULEWICZ, A et al.Physics of the solid state. 1993, Vol 35, Num 4, pp 490-495, issn 1063-7834Article

Measurement of contact resistance and of the components of the electrical conductivity of anisotropic crystals and filmsPOLYAKOV, N. N; ANDERSON, J. R. X.Technical physics. 1993, Vol 38, Num 7, pp 613-617, issn 1063-7842Article

Formation of ohmic contacts to p-type ZnOKURIMOTO, Makoto; ALMAMUN ASHRAFI, A. B. M; EBIHARA, Masato et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 635-639, issn 0370-1972, 5 p.Conference Paper

  • Page / 1276