Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:(%22Metal semiconductor field effect transistor%22)

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 1271795

  • Page / 50872
Export

Selection :

  • and

Active matching with common-gate MESFET'sNICLAS, K. B.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 6, pp 492-499, issn 0018-9480Article

Determination of the active-layer temperature near the channel of GaAs MESFET'SBOURDONNAIS, L; BEROLO, O; FORTIN, E et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1141-1147, issn 0038-1101Article

Field-theoretic analysis of wave propagation on FET electrodes including losses and small-signal amplificationHEINRICH, W; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 613-627, issn 0020-7217Article

Dependence of maximum gate-drain potential in GaAs MESFET's upon localized surface chargeBARTON, T. M; LADBROOKE, P. H.IEEE electron device letters. 1985, Vol 6, Num 3, pp 117-119, issn 0741-3106Article

Modeling gate modulation effects on fet electrical characteristics with arbitrary doping profilesMIN-WEN CHIANG; CHOMA, J. JR; KAO, C et al.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 701-707, issn 0038-1101Article

Experimental microwave-signal-propagation study on GaAs MESFET's using especially fabricated transistor structuresFRICKE, K; HARTNAGEL, H. L.IEEE electron device letters. 1985, Vol 6, Num 3, pp 151-153, issn 0741-3106Article

The effects of substrate gettering in GaAs MESFET performanceFAA-CHING WANG; BUJATTI, M.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2839-2843, issn 0018-9383Article

Coupled-mode analysis of travelling-wave MESFETSKRETSCHMER, K.-H; GRAMBOW, P; SIGULLA, T et al.International journal of electronics. 1985, Vol 8, Num 4, pp 639-648, issn 0020-7217Article

Examination of millimetre-wave frequency-gain behaviour of GaAs MESFETsKROWNE, C. M; NEIDERT, R. E.International journal of electronics. 1985, Vol 58, Num 3, pp 407-412, issn 0020-7217Article

FET characterization using gated-TLM structureBAIER, S. M; SHUR, M. S; LEE, K et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2824-2829, issn 0018-9383Article

Monte-Carlo particle model study of the influence of gate metallisation and gate geometry on the AC characteristics of GaAs MESFETsMOGLESTUE, C.IEE proceedings. Part I. Solid-state and electron devices. 1984, Vol 131, Num 6, pp 193-202, issn 0143-7100Article

Low-resistance submicrometre gates used for self alignmentISMAIL, K; BENEKING, H.Electronics Letters. 1984, Vol 20, Num 22, pp 942-943, issn 0013-5194Article

Coupled transmission line analysis for harmonic generation in travelling-wave MESFETSTIWARI, D. C; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 687-692, issn 0020-7217Article

Experimental study of MESFET travelling-wave structuresFRICKE, K; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 629-638, issn 0020-7217Article

Effets non locaux et de diffusion dans les transistors à effet de champ avec une porte sub-micronKAL'FA, A. A; PASHKOVSKIJ, A. B; TAGER, A. S et al.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1985, Vol 28, Num 12, pp 1583-1589, issn 0021-3462Article

Deep-level and profile effects upon low-noise ion-implanted GaAs MESFET'sTREW, R. J; ALI KHATIBZADEH, M; MASNARI, N. A et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 877-882, issn 0018-9383Article

A capacitance model for GaAs MESFET'sTZU-HUNG CHEN; SHUR, M. S.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 883-891, issn 0018-9383Article

Correlation between the backgating effect of a GaAs MESFET and the compensation mechanism of a semi-insulating substrateOGAWA, M; KAMIYA, T.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 3, pp 571-576, issn 0018-9383Article

Monolithic integration of surge protection diodes into low-noise GaAs MESFET'sHAGIO, M; KANAZAWA, K; NAMBU, S et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 892-895, issn 0018-9383Article

Anisotropic negative magnetoresistance in a variable-thickness electron gasNEWSON, D. J; PEPPER, M.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 32, pp L1049-L1055, issn 0022-3719Article

The theory and practice of the GaAs microwave power mesfetLADBROOKE, P. H.GEC journal of research. 1985, Vol 3, Num 3, pp 191-199, issn 0264-9187Article

Numerical simulation of GaAs MESFETS including velocity overshootSTENZEL, R; ELSCHNER, H; SPALLEK, R et al.Solid-state electronics. 1987, Vol 30, Num 8, pp 873-877, issn 0038-1101Article

Analysis of capacitance and transconductance frequency dispersions in MESFETS for surface characterizationGRAFFEUIL, J; HADJOUB, Z; FORTEA, J. P et al.Solid-state electronics. 1986, Vol 29, Num 10, pp 1087-1097, issn 0038-1101Article

Optimum B+ dose in S/D regions to improve schottky p-channel MOSFET characteristicsUEHIRA, K; KATO, K; WADA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 8, pp 1075-1078, issn 0021-4922, 1Article

Resonant tunneling transistors with controllable negative differential resistancesBONNEFOI, A. R; MCGILL, T. C; BURNHAM, R. D et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 636-638, issn 0741-3106Article

  • Page / 50872