Defect-pool model for doped a-Si:HSCHMAL, J.Journal of non-crystalline solids. 1996, Vol 198200, pp 387-390, issn 0022-3093, 1Conference Paper

Electronic structure of amorphous semiconductors studied by both X-ray photoelectron and soft X-ray spectroscopiesSENEMAUD, C.Journal of non-crystalline solids. 1996, Vol 198200, pp 85-90, issn 0022-3093, 1Conference Paper

Incorporation and thermal stability of hydrogen in amorphous silicon and germaniumBEYER, W.Journal of non-crystalline solids. 1996, Vol 198200, pp 40-45, issn 0022-3093, 1Conference Paper

Amorphous semiconductors - Science and technologySHIMIZU, Tatsuo; YONEZAWA, Fumiko; NITTA, Shoji et al.Journal of non-crystalline solids. 1996, Vol 198200, issn 0022-3093, 647 p., 1Conference Proceedings

Lifetime distribution of photoluminescence in a-Si:H based alloysOHEDA, H.Journal of non-crystalline solids. 1996, Vol 198200, pp 284-287, issn 0022-3093, 1Conference Paper

The moving-photocarrier-grating technique for the determination of transport parameters in thin film semiconductorsHUNDHAUSEN, M.Journal of non-crystalline solids. 1996, Vol 198200, pp 146-152, issn 0022-3093, 1Conference Paper

Structural changes in the Asia-Pacific oil market. Modifications structurelles du marché pétrolier du Sud-Est asiatiqueFESHARAKI, F.Pacific energy cooperation symposium. 1986, 29 p.Conference Proceedings

Material and device consideration for high efficiency a-Si alloy-based multijunction cellsGUHA, S.Journal of non-crystalline solids. 1996, Vol 198200, pp 1076-1080, issn 0022-3093, 2Conference Paper

Amorphous semiconductors - Science and technologySHIMIZU, Tatsuo; YONEZAWA, Fumiko; NITTA, Shoji et al.Journal of non-crystalline solids. 1996, Vol 198200, issn 0022-3093, 667 p., 2Conference Proceedings

A model for the photo-electro ionic phenomena in chalcogenide glassesANIYA, M.Journal of non-crystalline solids. 1996, Vol 198200, pp 762-765, issn 0022-3093, 2Conference Paper

Electronic processes in hydrogenated amorphous carbonROBERTSON, J.Journal of non-crystalline solids. 1996, Vol 198200, pp 615-618, issn 0022-3093, 2Conference Paper

Band tails and defect density in p-type doped hydrogenated amorphous germaniumCOMEDI, D; FAJARDO, F; CHAMBOULEYRON, I et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 399-402, issn 0022-3093, 1Conference Paper

Electroluminescence and forward bias currents in amorphous silicon p-i-n diodes : the effect of steady state bias and large i-layer thicknessCARIUS, R; BECKER, F; BRÜGGERMANN, R et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 246-250, issn 0022-3093, 1Conference Paper

Electronic structure of amorphous germanium-nitrogen alloys : a UV photoelectron spectroscopy studyCOMEDI, D; ZANATTA, A. R; ALVAREZ, F et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 136-139, issn 0022-3093, 1Conference Paper

Emission limited filling of deep defects in transient capacitance experimentsLIPS, K; UNOLD, T; XU, Y et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 525-529, issn 0022-3093, 1Conference Paper

High field transport in the inversion layer of amorphous silicon thin film transistorsHUNDHAUSEN, M; NAGY, A; LEY, L et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 230-233, issn 0022-3093, 1Conference Paper

Hydrogen motion in hydrogenated amorphous silicon (a-Si:H)HARI, P; TAYLOR, P. C; STREET, R. A et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 52-55, issn 0022-3093, 1Conference Paper

Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:HGODET, C; MORIN, P; I CABARROCAS, P. R et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 449-452, issn 0022-3093, 1Conference Paper

Measurement of carrier lifetime in materials exhibiting anomalous dispersionMARSHALL, J. M.Journal of non-crystalline solids. 1996, Vol 198200, pp 182-185, issn 0022-3093, 1Conference Paper

Phenomenological scaling of optical absorption in amorphous semiconductorsOKAMOTO, H; HATTORI, K; HAMAKAWA, Y et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 124-127, issn 0022-3093, 1Conference Paper

Spatial distribution of phosphorus atoms surrounding spin centers of P-doped hydrogenated amorphous silicon elucidated by pulsed ESRYAMASAKI, S; LEE, J.-K; UMEDA, T et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 330-333, issn 0022-3093, 1Conference Paper

Stability of the mobility-lifetime product of holes in undoped a-Si:H under illuminationWANG, F; SCHWARZ, R.Journal of non-crystalline solids. 1996, Vol 198200, pp 423-427, issn 0022-3093, 1Conference Paper

The relationship between hydrogen and electronic defects in amorphous siliconDEANE, S. C; POWELL, M. J.Journal of non-crystalline solids. 1996, Vol 198200, pp 295-299, issn 0022-3093, 1Conference Paper

What causes the inverse Staebler-Wronski effect in p-type a-Si:H ?ISOMURA, M; KINOSHITA, T; TSUDA, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 453-457, issn 0022-3093, 1Conference Paper

Working hypothesis to explore novel wide band bap electrically conducting amorphous oxides and examplesHOSONO, H; KIKUCHI, N; UEDA, N et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 165-169, issn 0022-3093, 1Conference Paper