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Internalization of Coxsackievirus A9 Is Mediated by β2-Microglobulin, Dynamin, and Arf6 but Not by Caveolin-1 or ClathrinHEIKKILÄ, Outi; SUSI, Petri; TEVALUOTO, Tuire et al.Journal of virology. 2010, Vol 84, Num 7, pp 3666-3681, issn 0022-538X, 16 p.Article
Preliminary crystallographic analysis of coxsackievirus A9SMYTH, M; HALL, J; FRY, E et al.Journal of molecular biology. 1993, Vol 230, Num 2, pp 667-669, issn 0022-2836Article
Effects of dissolved oxygen on passive behavior of stainless alloysRAJA, K. S; JONES, D. A.Corrosion science. 2006, Vol 48, Num 7, pp 1623-1638, issn 0010-938X, 16 p.Article
Integrin αVβ6 is a high-affinity receptor for coxsackievirus A9HEIKKILÄ, Outi; SUSI, Petri; STANWAY, Glyn et al.Journal of general virology. 2009, Vol 90, pp 197-204, issn 0022-1317, 8 p., 1Article
Factors affecting virus plaque confirmation proceduresDAHLING, D. R; SULLIVAN, G; FREYBERG, R. W et al.Journal of virological methods. 1989, Vol 24, Num 1-2, pp 111-122, issn 0166-0934Article
Efficient RGD-independent entry process of coxsackievirus A9ROIVAINEN, M; PIIRAINEN, L; HOVI, T et al.Archives of virology. 1996, Vol 141, Num 10, pp 1909-1919, issn 0304-8608Article
Etude hydraulique et thermique de l'ébullitionconvective de fluide R22 dans des canaux de section rectangulaireSaclier, François; Hopfinger, Emil.1989, 210 p.Thesis
STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article
Effets non réciproques dans des structures hétérogènes de semiconducteursBELYANTSEV, A. M; KOZLOV, V. A; MAZOV, L. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 655-660, issn 0015-3222Article
Double-carrier injection and recombination in insulators, including diffusion effectsTORPEY, P. A.Journal of applied physics. 1984, Vol 56, Num 8, pp 2284-2294, issn 0021-8979Article
Study of the correlation between radiative and non-radiative recombination channels in siliconACCIARRI, M; CIRELLI, C; PIZZINI, S et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13223-13230, issn 0953-8984, 8 p.Conference Paper
INFLUENCE OF DEFORMATION ON THE MOBILITY AND LIFETIMES OF CHARGE-CARRIERS IN ANTHRACENE CRYSTALSARIS FC; LEWIS TJ; THOMAS JM et al.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 9; PP. 913-917; ABS. FR.; BIBL. 15 REF.Serial Issue
EFFECT OF CHARGED-CENTRE SCATTERING ON THE MOBILITY OF PHOTO-EXCITED CARRIERS IN DEFECT PHOTOCONDUCTORSSIMMONS JG; TAYLOR GW.1973; PHILOS. MAG.; G.B.; DA. 1973; VOL. 27; NO 1; PP. 121-126; BIBL. 10 REF.Serial Issue
Recombination-induced heating of free carriers in a semiconductorBIMBERG, D; MYCIELSKI, J.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5490-5493, issn 0163-1829Article
THE MOBILITY OF FREE CARRIERS IN PBSE CRYSTALSSCHLICHTING U; GOBRECHT KH.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 4; PP. 753-758; BIBL. 11 REF.Serial Issue
A CASE OF COXSACKIE A9 VIRUS INFECTION WITH ORCHITISWILLEMS WR; HORNIG C; BAUER H et al.1978; J. MED. VIROL.; USA; DA. 1978; VOL. 3; NO 2; PP. 137-140; BIBL. 8 REF.Article
A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORSMING FU LI; CHIH TANG SAH.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 306-315; BIBL. 21 REF.Article
MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299 AND 105 KDAS MB; KIM B.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 205-211; BIBL. 12 REF.Article
NOUVEAUX MODES DES ONDES DE RECOMBINAISON DANS DES SEMICONDUCTEURS A PLUSIEURS NIVEAUX PIEGESSABLIKOV VA.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 7; PP. 1340-1347; BIBL. 4 REF.Article
Diffusion des porteurs de déséquilibre dans le champ de centres profonds de capturePRIGODIN, V. N.ZETF. Pis′ma v redakciû. 1985, Vol 88, Num 3, pp 909-920, issn 0044-4510Article
Electron-trap generation by recombination of electrons and holes in SiO2CHEN, I. C; HOLLAND, S; HU, C et al.Journal of applied physics. 1987, Vol 61, Num 9, pp 4544-4548, issn 0021-8979Article
Hole trapping and interface state generation during bias-temperature stress of SiO2 layersHAYWOOD, S. K; DE KEERSMAECKER, R. F.Applied physics letters. 1985, Vol 47, Num 4, pp 381-383, issn 0003-6951Article
Drift mobility, electron trapping, and diffusion-limited kinetics in sulfur-sensitized AgBr microcrystalsDERI, R. J; SPOONHOWER, J. P.Journal of applied physics. 1985, Vol 57, Num 8, pp 2806-2811, issn 0021-8979Article
Particularités de la caractéristique courant-tension lors d'une injection double dans les structures multicouches au silicium avec une base étroiteMNATSAKANOV, T. T; TUGUSHEVA, T. E.Radiotehnika i èlektronika. 1985, Vol 30, Num 1, pp 127-132, issn 0033-8494Article
Analysis of the decay of picosecond fluorescence in semiconductors. Criteria for the presumption of electroneutrality during the decay of an exponential electron-hole profileFELDBERG, S. W; EVENOR, M; HUPPERT, D et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1985, Vol 185, Num 2, pp 209-228, issn 0022-0728Article