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Results 1 to 25 of 14796

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Optical transmittance study of the thermal decomposition of sputtered Pt-Ag-O filmsSHIMA, Takayuki; TOMINAGA, Junji.Thin solid films. 2003, Vol 425, Num 1-2, pp 31-34, issn 0040-6090, 4 p.Article

Effect of Ni-Cu substrates on phase selection of hexagonal and cubic boron nitride thin filmsKOTAKE, Shigeo; HASEGAWA, Takaya; KAMIYA, Kazutaka et al.Applied surface science. 2003, Vol 216, Num 1-4, pp 72-77, issn 0169-4332, 6 p.Conference Paper

Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imagingDEQIANG CAI; JIN ZOU; GUIBIN CHEN et al.Scripta materialia. 2002, Vol 47, Num 4, pp 279-283, issn 1359-6462Article

Nitrogen plasma pressure influence on the composition of TiNxOy sputtered filmsGUILLOT, J; JOUAITI, A; IMHOFF, L et al.Surface and interface analysis. 2002, Vol 33, Num 7, pp 577-582, issn 0142-2421Article

X-ray absorption spectral studies on the anion-selectivity of a ruthenium(II) polypyridine complex-impregnated polymer ultrathin filmMATSUO, Shuji; YAMADA, Sunao; MATSUO, Taku et al.Analytical sciences. 2002, Vol 18, Num 8, pp 927-930, issn 0910-6340Article

Relationship between composition and position of Raman and IR peaks in amorphous carbon alloysFANCHINI, G; MESSINA, G; PAOLETTI, A et al.Surface & coatings technology. 2002, Vol 151-52, pp 257-262, issn 0257-8972Conference Paper

Ultraviolet and visible Raman spectroscopy characterization of chemical vapor deposition diamond filmsHUANG, S. M; SUN, Z; LU, Y. F et al.Surface & coatings technology. 2002, Vol 151-52, pp 263-267, issn 0257-8972Conference Paper

X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond MethodHERRES, N; KIRSTE, L; OBLOH, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 425-432, issn 0921-5107Conference Paper

Fast method of qualitative analysis of PTFE particles in the Au-Co-PTFE composite coatings by infrared spectroscopySERHAL, Z; MORVAN, J; REZRAZI, M et al.Surface & coatings technology. 2001, Vol 140, Num 2, pp 166-174, issn 0257-8972Article

Oriented growth of ZRO2 by treatment thin zirconium films in hydrogen plasmaCHAPLANOV, A. M; SHCHERBAKOVA, E. N.Le Vide (1995). 2000, Vol 55, Num 295, pp 271-273, issn 1266-0167, SUPConference Paper

Quantitative SIMS analysis of nitrogen using in situ internal implantationSEKI, S; TAMURA, H; SUMIYA, H et al.Applied surface science. 1999, Vol 147, Num 1-4, pp 14-18, issn 0169-4332Article

Depth profiling analysis of lithium and barium disilicate coatings on silica glassSCHMITZ, R; FRISCHAT, G. H.Glass science and technology (Frankfurt). 1998, Vol 71, Num 4, pp 92-96, issn 0946-7475Article

Phase composition of anodic oxide films on transition metals : a thermodynamic approachPERGAMENT, A. L; STEFANOVICH, G. B.Thin solid films. 1998, Vol 322, Num 1-2, pp 33-36, issn 0040-6090Article

Influence of the deposition parameters on the chemical composition of reactively rf sputtered TiO2 on SiALEXANDROV, P; KOPRINAROVA, J; TODOROV, D et al.Applied surface science. 1997, Vol 115, Num 2, pp 128-134, issn 0169-4332Article

Thermal gas effusion from diamond-like carbon filmsMALHOTRA, M; KUMAR, S.Diamond and related materials. 1997, Vol 6, Num 12, pp 1830-1835, issn 0925-9635Article

Thermal desorption spectrometry study of Si1-xGex : H amorphous alloysRINNERT, H; VERGNAT, M; MARCHAL, G et al.Applied surface science. 1997, Vol 119, Num 3-4, pp 224-228, issn 0169-4332Article

Interpretation of Auger depth profiles of thin SiC layers on SiECKE, G; RÖSSLER, H; CIMALLA, V et al.Mikrochimica acta (1966. Print). 1997, Vol 125, Num 1-4, pp 219-222, issn 0026-3672Conference Paper

Optimum parameters in the SNMS high-frequency-mode for the quantitative analysis of thick, non-conducting layersSOMMER, D; ESSING, A.Mikrochimica acta (1966. Print). 1997, Vol 125, Num 1-4, pp 269-274, issn 0026-3672Conference Paper

Composition of lead-germanium-tin-tellurium epitaxial layers grown in a quasi-closed reactorVODOP'YANOV, V. N; KONDRATENKO, M. M; SLYN'KO, E. I et al.Inorganic materials. 1996, Vol 32, Num 9, pp 960-962, issn 0020-1685Article

Depth profiling of W, O and H in tungsten trioxide thin films using RBS and ERDA techniquesBOHNKE, O; FRAND, G; FROMM, M et al.Applied surface science. 1996, Vol 93, Num 1, pp 45-52, issn 0169-4332Article

Nitride formation in iron-cobalt sputtered thin filmsPAIN, P; CHARTIER, P; DINHUT, J. F et al.Thin solid films. 1996, Vol 272, Num 1, pp 33-37, issn 0040-6090Article

Influence of the rapid thermal annealing in vacuum on the XPS characteristics of thin SiO2ATANASSOVA, E; PASKALEVA, A.Applied surface science. 1996, Vol 103, Num 4, pp 359-367, issn 0169-4332Article

Ellipsometric study of thermal and laser annealed amorphous and microcrystalline silicon filmsJAYATISSA, A. H; SUZUKI, M; NAKANISHI, Y et al.Applied surface science. 1996, Vol 92, Num 1-4, pp 300-305, issn 0169-4332Conference Paper

Characterization of spinel-type cobalt and nickel oxide thin films by X-ray near grazing diffraction, transmission and reflectance spectroscopies, and cyclic voltammetryNKENG, P; POILLERAT, G; KOENIG, J. F et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp 1777-1783, issn 0013-4651Article

Improvement of the crystallinity of AlAs/GaAs superlattices grown on Si substrates by rapid thermal annealingWOO, Y. D; LEE, H. I; KANG, T. W et al.Thin solid films. 1995, Vol 264, Num 1, pp 1-3, issn 0040-6090Article

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