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kw.\*:(%22Molecular beam epitaxy%22)

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1.3 μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (22 1)A InP substrates by molecular beam epitaxySHIMOMURA, S; TORITSUKA, T; UENISHI, A et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 346-349, issn 1386-9477, 4 p.Conference Paper

A Southern African positron beamBRITTON, D. T; HÄRTING, M; TEEMANE, M. R. B et al.Applied surface science. 1997, Vol 116, pp 53-58, issn 0169-4332Conference Paper

Structural study of self-assembled monolayer of 22-mercapto-1-docosanoic acid on silver(111)SAMANT, M. G; BROWN, C. A; GORDON, J. G et al.Surface science. 1996, Vol 365, Num 3, pp 729-734, issn 0039-6028Article

Surface bismuth removal after Bi nanoline encapsulation in siliconYAGI, Shuhei; YASHIRO, Wataru; SAKAMOTO, Kunihiro et al.Surface science. 2005, Vol 595, Num 1-3, pp L311-L317, issn 0039-6028Article

Studies on scattering of fast H and He atoms from fe films grown on Cu(001)BARON, M; BERNHARD, T; GRUYTERS, M et al.Surface science. 2006, Vol 600, Num 18, pp 3924-3927, issn 0039-6028, 4 p.Conference Paper

Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffractionFISSEL, Andreas; KRÜGENER, Jan; OSTEN, Hans Jörg et al.Surface science. 2009, Vol 603, Num 3, pp 477-481, issn 0039-6028, 5 p.Article

In-droplet-induced formation of InP nanostructures by solid-source molecular-beam epitaxyJEVASUWAN, Wipakorn; PANYAKEOW, Somsak; RATANATHAMMAPHAN, Somchai et al.Microelectronic engineering. 2007, Vol 84, Num 5-8, pp 1548-1551, issn 0167-9317, 4 p.Conference Paper

Comparison of organic thin films deposited by supersonic molecular-beam epitaxy and organic molecular-beam epitaxy : The case of titanyl phthalocyanineWALZER, K; TOCCOLI, T; PALLAORO, A et al.Surface science. 2006, Vol 600, Num 10, pp 2064-2069, issn 0039-6028, 6 p.Article

Controllable growth of semiconductor nanometer structuresWANG, Z. G; WU, J.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 379-382, issn 0959-8324, 4 p.Conference Paper

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wellsKOVSH, A. R; ZHUKOV, A. E; ALFEROV, Zh. I et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 491-493, issn 0959-8324, 3 p.Conference Paper

A several tens-keV monoenergetic positron surface analyzer with 22Na and electrostatic fieldsNUNOGAKI, M; YAMAMOTO, T; HONDA, Y et al.Applied surface science. 1995, Vol 85, pp 132-137, issn 0169-4332Conference Paper

Installation of a Kr moderator in the high-brightness beam at BrandeisVASUMATHI, D; AMARENDRA, G; CANTER, K. F et al.Applied surface science. 1995, Vol 85, pp 154-157, issn 0169-4332Conference Paper

A high performance electrostatic positron beamBRUSA, R. S; KARWASZ, G. P; BETTONTE, M et al.Applied surface science. 1997, Vol 116, pp 59-62, issn 0169-4332Conference Paper

The optimization of a self-focusing e-beam evaporator for carbon evaporation and the application for graphene growthCHEN, S; FAN, L. L; WANG, J et al.Surface & coatings technology. 2014, Vol 258, pp 1196-1201, issn 0257-8972, 6 p.Article

Lateral p-n junctions for high-density LED arraysVACCARO, Pablo O; VOROBEV, A; DHARMARASU, N et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 355-357, issn 0959-8324, 3 p.Conference Paper

Light emission from cubic InGaN nanostructuresLISCHKA, K.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 427-433, issn 0959-8324, 7 p.Conference Paper

Characterization of compositional oscillations in InGaAs films induced by MBE cell configuration and substrate rotationSAMEY, W. L; SVENSSON, S. P.Materials characterization. 2007, Vol 58, Num 3, pp 284-288, issn 1044-5803, 5 p.Article

Surface mediated control of droplet density and morphology on GaAs and AlAs surfacesJIANG WU; WANG, Zhiming M; LI, Alvason Z et al.Physica status solidi. Rapid research letters (Print). 2010, Vol 4, Num 12, pp 371-373, issn 1862-6254, 3 p.Article

On the formation of Si nanowires by molecular beam epitaxyWERNER, Peter; ZAKHAROV, Nikolai D; GERTH, Gerhard et al.International journal of materials research. 2006, Vol 97, Num 7, pp 1008-1015, issn 1862-5282, 8 p.Article

Heteroepitaxy of cubic GaNTRAMPERT, A; BRANDT, O; YANG, H et al.Journal de physique. III (Print). 1997, Vol 7, Num 12, pp 2309-2316, issn 1155-4320Conference Paper

Mechanical responses of Zn1―xMnxO epitaxial thin filmsCHANG, Teng-Ruey; TSAI, Chien-Huang.Applied surface science. 2011, Vol 258, Num 1, pp 614-617, issn 0169-4332, 4 p.Article

Three decades of molecular beam epitaxyFOXON, C. T.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 1-8, issn 0022-0248, 8 p.Conference Paper

Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxyYANPING WEI; CUNXU GAO; CHUNHUI DONG et al.Applied surface science. 2014, Vol 293, pp 71-75, issn 0169-4332, 5 p.Article

Scanning tunneling microscopy investigation of CoO/Fe(001) and Fe/CoO/Fe(001) layered structuresBRAMBILLA, A; PICONE, A; FINAZZI, M et al.Surface science. 2011, Vol 605, Num 1-2, pp 95-100, issn 0039-6028, 6 p.Article

Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallitesRUI SHAO; CHONGMIN WANG; MCCREADY, David E et al.Surface science. 2007, Vol 601, Num 6, pp 1582-1589, issn 0039-6028, 8 p.Article

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