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Electron-trap generation by recombination of electrons and holes in SiO2CHEN, I. C; HOLLAND, S; HU, C et al.Journal of applied physics. 1987, Vol 61, Num 9, pp 4544-4548, issn 0021-8979Article
Etude hydraulique et thermique de l'ébullitionconvective de fluide R22 dans des canaux de section rectangulaireSaclier, François; Hopfinger, Emil.1989, 210 p.Thesis
Rigorous modeling of recombination under double injection in amorphous films : An example of the stiff problemSCHAUER, F; WEITER, M.The Journal of imaging science and technology. 1999, Vol 43, Num 5, pp 413-419, issn 1062-3701Article
A tunable, current-controlled, ligt-emitting diodeMANIFACIER, J. C; MOREAU, Y; HENISCH, H. K et al.Solid-state electronics. 1987, Vol 30, Num 3, pp 354-357, issn 0038-1101Article
The recombination-induced temperature change of non-equilibrium charge carriersBIMBERG, D; MYCIELSKI, J.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 13, pp 2363-2373, issn 0022-3719Article
Analytical model and qualitative analysis of the interface-trap charge pumping characteristics of MOS structureHABAS, P.International conference on microelectronic. 1997, pp 605-610, isbn 0-7803-3664-X, 2VolConference Paper
Non-equilibrium velocity autocorrelation function for semiconductors in the presence of trapping phenomenaMACUCCI, M; PELLEGRINI, B; TERRENI, P et al.Physica status solidi. B. Basic research. 1989, Vol 152, Num 2, pp 601-616, issn 0370-1972, 16 p.Article
Reactive ion etching of zinc doped InP using methane and hydrogen : assessment of the degree and extent of changes in surface carrier concentrationSINGH, J.Journal of applied physics. 1990, Vol 68, Num 10, pp 5383-5384, issn 0021-8979Article
Effects of dissolved oxygen on passive behavior of stainless alloysRAJA, K. S; JONES, D. A.Corrosion science. 2006, Vol 48, Num 7, pp 1623-1638, issn 0010-938X, 16 p.Article
Effects of heavy doping on numerical simulations of gallium arsenide bipolar transistorsTOMIZAWA, M; ISHIBASHI, T; BENNETT, H. S et al.Solid-state electronics. 1992, Vol 35, Num 6, pp 865-874, issn 0038-1101Article
Carrier density dependent photoconductivity in diamondPAN, L. S; KANIA, D. R; PIANETTA, P et al.Applied physics letters. 1990, Vol 57, Num 6, pp 623-625, issn 0003-6951, 3 p.Article
Accurate determination of minority carrier- and lattice scattering-mobility in silicon from photoconductance decaySPROUL, A. B; GREEN, M. A; STEPHENS, A. W et al.Journal of applied physics. 1992, Vol 72, Num 9, pp 4161-4171, issn 0021-8979Article
Identification of generation-recombination centers and traps in virgin and Fowler-Nordheim stressed metal-oxide-semiconductor field-effect transistors by low temperature charge pumping techniqueJEN-TAI HSU; VISWANATHAN, C. R.Japanese journal of applied physics. 1994, Vol 33, Num 1B, pp 683-687, issn 0021-4922, 1Conference Paper
Multidimensional augmented current equation including velocity oveshootKAN, E. C; RAVAIOLI, U; CHEN, D et al.IEEE electron device letters. 1991, Vol 12, Num 8, pp 419-421, issn 0741-3106Article
Noncontact mobility measurements with a laser/microwave photoconductance technique : temperature dependenceBUCKOWSKI, A; KATAYAMA, K; ROZGONYI, G. A et al.Applied physics letters. 1992, Vol 60, Num 10, pp 1229-1231, issn 0003-6951Article
Percolation in implanted Si filmHIRAIWA, A; KOBAYASHI, T.Journal of applied physics. 1991, Vol 70, Num 1, pp 309-312, issn 0021-8979, 4 p.Article
Effect of electron-hole scattering on the current flow in semiconductorsKANE, D. E; SWANSON, R. M.Journal of applied physics. 1992, Vol 72, Num 11, pp 5294-5304, issn 0021-8979Article
Electron-hole recombination via a simplified cascade processDHARIWAL, S. R; LANDSBERG, P. T.Journal of physics. Condensed matter (Print). 1989, Vol 1, Num 3, pp 569-584, issn 0953-8984Article
Limiting carrier effect in a-Si:H solar cellsPRENTICE, J. S. C.Solar energy materials and solar cells. 2001, Vol 69, Num 1, pp 9-16, issn 0927-0248Article
The Einstein relation in ultrathin films of non-parabolic semiconductors under magnetic quantizationGHATAK, K. P; BISWAS, S. N.Nanostructured materials. 1993, Vol 2, Num 1, pp 91-97, issn 0965-9773Article
Interface roughness scattering and electron mobility in quantum wiresMOTOHISA, J; SAKAKI, H.Applied physics letters. 1992, Vol 60, Num 11, pp 1315-1317, issn 0003-6951Article
Steady-states in a cooled p-Ge photoconductor via the Landsberg-Schöll-Shukla modelNIKOLIC, K.Solid-state electronics. 1992, Vol 35, Num 5, pp 671-675, issn 0038-1101Article
Fast transient photoconductivity in polydiacetylene: carrier photoregeneration, carrier mobility and carrier recombinationMOSES, D; HEEGER, A. J.Journal of physics. Condensed matter (Print). 1989, Vol 1, Num 40, pp 7395-7405, issn 0953-8984Article
Study of the correlation between radiative and non-radiative recombination channels in siliconACCIARRI, M; CIRELLI, C; PIZZINI, S et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13223-13230, issn 0953-8984, 8 p.Conference Paper
Monte Carlo simulation of trapping and recombination kinetics of charge carriers' in one-dimensional structuresMANDOWSKI, A.International symposium on electrets. 1999, pp 363-366, isbn 0-7803-5025-1Conference Paper